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- Title
- An approach to improve the failure rate model of a solid state laser by utilizing the Physics of Failure Methodology.
- Creator
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Thompson, Omar, Kincaid, John, Bass, Michael, Clarke, Thomas, Wiegand, Rudolf, Shumaker, Randall, Bass, Michael, University of Central Florida
- Abstract / Description
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The ability to predict the failure rate of any military laser is very critical. In-field laser usage does not support the troubleshooting and repairing of a complex electro optical system. The only published laser failure rate model was last updated by the Department of Defense in 1975. Consequently, the failure rate predicted is inaccurate due to model deficiencies. This dissertatiodatn has developed a laser failure rate model for diode pumped lasers with improved failure rate prediction...
Show moreThe ability to predict the failure rate of any military laser is very critical. In-field laser usage does not support the troubleshooting and repairing of a complex electro optical system. The only published laser failure rate model was last updated by the Department of Defense in 1975. Consequently, the failure rate predicted is inaccurate due to model deficiencies. This dissertatiodatn has developed a laser failure rate model for diode pumped lasers with improved failure rate prediction accuracy. The model has surpassed the capabilities of the Department of Defense model by the inclusion of key performance attributes that are currently not taken into account. The scope of work completed was based on a tailored Physics of Failure methodology. The research approach implemented was: 1. Integration of Failure Mode and Effects Analysis to evaluate deployed laser failure. 2. Beam simulation for alignment tolerance analysis. 3. Thermal and vibration effects analysis on laser performance. 4. Analysis and development of a methodology to represent a resonator failure rate model. A secondary contribution of this research effort is supporting the update of the current laser failure rate model. The success of revising the current model relies on leveraging the work of other organizations in the area of failure rate modeling and reliability predictions.
Show less - Date Issued
- 2011
- Identifier
- CFE0004587, ucf:49214
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004587
- Title
- LASER METALLIZATION AND DOPING FOR SILICON CARBIDE DIODE FABRICATION AND ENDOTAXY.
- Creator
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Tian, Zhaoxu, Kar, Aravinda, University of Central Florida
- Abstract / Description
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Silicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field strength, highly saturated drift velocity of electrons and outstanding thermal conductivity. With the aim of overcoming some challenges in metallization and doping during the fabrication of silicon carbide devices, a novel laser-based process is provided to direct metallize the surface of silicon carbide without metal...
Show moreSilicon carbide is a promising semiconductor material for high voltage, high frequency and high temperature devices due to its wide bandgap, high breakdown electric field strength, highly saturated drift velocity of electrons and outstanding thermal conductivity. With the aim of overcoming some challenges in metallization and doping during the fabrication of silicon carbide devices, a novel laser-based process is provided to direct metallize the surface of silicon carbide without metal deposition and dope in silicon carbide without high temperature annealing, as an alternative to the conventional ion implantation, and find applications of this laser direct write metallization and doping technique on the fabrication of diodes, endotaxial layer and embedded optical structures on silicon carbide wafers. Mathematical models have been presented for the temperature distributions in the wafer during laser irradiation to optimize laser process parameters and understand the doping and metallization mechanisms in laser irradiation process. Laser irradiation of silicon carbide in a dopant-containing ambient allows to simultaneously heating the silicon carbide surface without melting and incorporating dopant atoms into the silicon carbide lattice. The process that dopant atoms diffuse into the bulk silicon carbide by laser-induced solid phase diffusion (LISPD) can be explained by considering the laser enhanced substitutional and interstitial diffusion mechanisms. Nitrogen and Trimethyaluminum (TMA) are used as dopants to produce n-type and p-type doped silicon carbide, respectively. Two laser doping methods, i.e., internal heating doping and surface heating doping are presented in this dissertation. Deep (800 nm doped junction for internal heating doping) and shallow (200 nm and 450 nm doped junction for surface heating doping) can be fabricated by different doping methods. Two distinct diffusion regions, near-surface and far-surface regions, were identified in the dopant concentration profiles, indicating different diffusion mechanisms in these two regions. The effective diffusion coefficients of nitrogen and aluminum were determined for both regions by fitting the diffusion equation to the measured concentration profiles. The calculated diffusivities are at least 6 orders of magnitude higher than the typical values for nitrogen and aluminum, which indicate that laser doping process enhances the diffusion of dopants in silicon carbide significantly. No amorphization was observed in laser-doped samples eliminating the need for high temperature annealing. Laser direct metallization can be realized on the surface of silicon carbide by generating metal-like conductive phases due to the decomposition of silicon carbide. The ohmic property of the laser direct metallized electrodes can be dramatically improved by fabricating such electrodes on laser heavily doped SiC substrate. This laser-induced solid phase diffusion technique has been utilized to fabricate endolayers in n-type 6H-SiC substrates by carbon incorporation. X-ray energy dispersive spectroscopic analysis shows that the thickness of endolayer is about 100 nm. High resolution transmission electron microscopic images indicate that the laser endotaxy process maintains the crystalline integrity of the substrate without any amorphization. Rutherford backscattering studies also show no amorphization and evident lattice disorder occur during this laser solid phase diffusion process. The resistivity of the endolayer formed in a 1.55 omega•cm silicon carbide wafer segment was found to be 1.1E5 omega•cm which is sufficient for device fabrication and isolation. Annealing at 1000 oC for 10 min to remove hydrogen resulted in a resistivity of 9.4E4 omega•cm. Prototype silicon carbide PIN diodes have been fabricated by doping the endolayer and parent silicon carbide epilayer with aluminum using this laser-induced solid phase diffusion technique to create p-regions on the top surfaces of the substrates. Laser direct metallized contacts were also fabricated on selected PIN diodes to show the effectiveness of these contacts. The results show that the PIN diode fabricated on a 30 nm thick endolayer can block 18 V, and the breakdown voltages and the forward voltages drop at 100 A/cm2 of the diodes fabricated on 4H-SiC with homoepilayer are 420 ~ 500 V and 12.5 ~ 20 V, respectively. The laser direct metallization and doping technique can also be used to synthesize embedded optical structures, which can increase 40% reflectivity compared to the parent wafer, showing potential for the creation of optical, electro-optical, opto-electrical, sensor devices and other integrated structures that are stable in high temperature, high-pressure, corrosive environments and deep space applications.
Show less - Date Issued
- 2006
- Identifier
- CFE0001061, ucf:46803
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001061
- Title
- LASER ENHANCED DOPING FOR SILICON CARBIDE WHITE LIGHTEMITTING DIODES.
- Creator
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Bet, Sachin, Kar, Aravinda, University of Central Florida
- Abstract / Description
-
This work establishes a solid foundation for the use of indirect band gap semiconductors for light emitting application and presents the work on development of white light emitting diodes (LEDs) in silicon carbide (SiC). Novel laser doping has been utilized to fabricate white light emitting diodes in 6H-SiC (n-type N) and 4H-SiC (p-type Al) wafers. The emission of different colors to ultimately generate white light is tailored on the basis of donor acceptor pair (DAP) recombination mechanism...
Show moreThis work establishes a solid foundation for the use of indirect band gap semiconductors for light emitting application and presents the work on development of white light emitting diodes (LEDs) in silicon carbide (SiC). Novel laser doping has been utilized to fabricate white light emitting diodes in 6H-SiC (n-type N) and 4H-SiC (p-type Al) wafers. The emission of different colors to ultimately generate white light is tailored on the basis of donor acceptor pair (DAP) recombination mechanism for luminescence. A Q-switched Nd:YAG pulse laser (1064 nm wavelength) was used to carry out the doping experiments. The p and n regions of the white SiC LED were fabricated by laser doping an n-type 6H-SiC and p-type 4H-SiC wafer substrates with respective dopants. Cr, B and Al were used as p-type dopants (acceptors) while N and Se were used as n-type dopants (donors). Deep and shallow donor and acceptor impurity level states formed by these dopants tailor the color properties for pure white light emission. The electromagnetic field of lasers and non-equilibrium doping conditions enable laser doping of SiC with increased dopant diffusivity and enhanced solid solubility. A thermal model is utilized to determine the laser doping parameters for temperature distribution at various depths of the wafer and a diffusion model is presented including the effects of Fick's diffusion, laser electromagnetic field and thermal stresses due to localized laser heating on the mass flux of dopant atoms. The dopant diffusivity is calculated as a function of temperature at different depths of the wafer based on measured dopant concentration profile. The maximum diffusivities achieved in this study are 4.6110-10 cm2/s at 2898 K and 6.9210-12 cm2/s at 3046 K for Cr in 6H-SiC and 4H-SiC respectively. Secondary ion mass spectrometric (SIMS) analysis showed the concentration profile of Cr in SiC having a penetration depth ranging from 80 nm in p-type 4H-SiC to 1.5 m in n-type 6H-SiC substrates respectively. The SIMS data revealed enhanced solid solubility (2.291019 cm-3 in 6H-SiC and 1.421919 cm-3 in 4H-SiC) beyond the equilibrium limit (31017 cm-3 in 6H-SiC above 2500 C) for Cr in SiC. It also revealed similar effects for Al and N. The roughness, surface chemistry and crystalline integrity of the doped sample were examined by optical interferometer, energy dispersive X-ray spectrometry (EDS) and transmission electron microscopy (TEM) respectively. Inspite of the larger atomic size of Cr compared to Si and C, the non-equilibrium conditions during laser doping allow effective incorporation of dopant atoms into the SiC lattice without causing any damage to the surface or crystal lattice. Deep Level Transient Spectroscopy (DLTS) confirmed the deep level acceptor state of Cr with activation energies of Ev+0.80 eV in 4H-SiC and Ev+0.45 eV in 6H-SiC. The Hall Effect measurements showed the hole concentration to be 1.981019 cm-3 which is almost twice the average Cr concentration (11019 cm-3) obtained from the SIMS data. These data confirmed that almost all of the Cr atoms were completely activated to the double acceptor state by the laser doping process without requiring any subsequent annealing step. Electroluminescence studies showed blue (460-498 nm), blue-green (500-520 nm) green (521-575 nm), and orange (650-690 nm) wavelengths due to radiative recombination transitions between donor-acceptors pairs of N-Al, N-B, N-Cr and Cr-Al respectively, while a prominent violet (408 nm) wavelength was observed due to transitions from the nitrogen level to the valence band level. The red (698-738 nm) luminescence was mainly due to metastable mid-bandgap states, however under high injection current it was due to the quantum mechanical phenomenon pertaining to band broadening and overlapping. This RGB combination produced a broadband white light spectrum extending from 380 to 900 nm. The color space tri-stimulus values for 4H-SiC doped with Cr and N were X = 0.3322, Y = 0.3320 and Z = 0.3358 as per 1931 CIE (International Commission on Illumination) corresponding to a color rendering index of 96.56 and the color temperature of 5510 K. And for 6H-SiC n-type doped with Cr and Al, the color space tri-stimulus values are X = 0.3322, Y = 0.3320 and Z = 0.3358. The CCT was 5338 K, which is very close to the incandescent lamp (or black body) and lies between bright midday sun (5200 K) and average daylight (5500 K) while CRI was 98.32. Similar white LED's were also fabricated using Cr, Al, Se as one set of dopants and B, Al, N as another.
Show less - Date Issued
- 2008
- Identifier
- CFE0002362, ucf:47808
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0002362
- Title
- THERMAL MANAGEMENT, BEAM CONTROL,AND PACKAGING DESIGNS FOR HIGH POWER DIODE LASER ARRAYS AND PUMP CAVITY DESIGNS FOR DIODE LASER ARRAY PUMPED ROD SHAPED LASERS.
- Creator
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Chung, Te-yuan, Bass, Michael, University of Central Florida
- Abstract / Description
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Several novel techniques for controlling, managing and utilizing high power diode lasers are described. Low pressure water spray cooling for a high heat flux system is developed and proven to be an ideal cooling method for high power diode laser arrays. In order to enable better thermal and optical performance of diode laser arrays, a new and simple optical element, the beam control prism, is invented. It provides the ability to accomplish beam shaping and beam tilting at the same time....
Show moreSeveral novel techniques for controlling, managing and utilizing high power diode lasers are described. Low pressure water spray cooling for a high heat flux system is developed and proven to be an ideal cooling method for high power diode laser arrays. In order to enable better thermal and optical performance of diode laser arrays, a new and simple optical element, the beam control prism, is invented. It provides the ability to accomplish beam shaping and beam tilting at the same time. Several low thermal resistance diode packaging designs using beam control prisms are proposed, studied and produced. Two pump cavity designs using a diode laser array to uniformly pump rod shape gain media are also investigated.
Show less - Date Issued
- 2004
- Identifier
- CFE0000259, ucf:46222
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000259
- Title
- SPRAY COOLING FOR LAND, SEA, AIR AND SPACE BASED APPLICATIONS,A FLUID MANAGEMENT SYSTEM FOR MULTIPLE NOZZLE SPRAY COOLING AND A GUIDE TO HIGH HEAT FLUX HEATER DESIGN.
- Creator
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Glassman, Brian, Chow, Louis, University of Central Florida
- Abstract / Description
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This thesis is divided into four distinct chapters all linked by the topic of spray cooling. Chapter one gives a detailed categorization of future and current spray cooling applications, and reviews the major advantages and disadvantages that spray cooling has over other high heat flux cooling techniques. Chapter two outlines the developmental goals of spray cooling, which are to increase the output of a current system and to enable new technologies to be technically feasible. Furthermore,...
Show moreThis thesis is divided into four distinct chapters all linked by the topic of spray cooling. Chapter one gives a detailed categorization of future and current spray cooling applications, and reviews the major advantages and disadvantages that spray cooling has over other high heat flux cooling techniques. Chapter two outlines the developmental goals of spray cooling, which are to increase the output of a current system and to enable new technologies to be technically feasible. Furthermore, this chapter outlines in detail the impact that land, air, sea, and space environments have on the cooling system and what technologies could be enabled in each environment with the aid of spray cooling. In particular, the heat exchanger, condenser and radiator are analyzed in their corresponding environments. Chapter three presents an experimental investigation of a fluid management system for a large area multiple nozzle spray cooler. A fluid management or suction system was used to control the liquid film layer thickness needed for effective heat transfer. An array of sixteen pressure atomized spray nozzles along with an imbedded fluid suction system was constructed. Two surfaces were spray tested one being a clear grooved Plexiglas plate used for visualization and the other being a bottom heated grooved 4.5 x 4.5 cm2 copper plate used to determine the heat flux. The suction system utilized an array of thin copper tubes to extract excess liquid from the cooled surface. Pure water was ejected from two spray nozzle configurations at flow rates of 0.7 L/min to 1 L/min per nozzle. It was found that the fluid management system provided fluid removal efficiencies of 98% with a 4-nozzle array, and 90% with the full 16-nozzle array for the downward spraying orientation. The corresponding heat fluxes for the 16 nozzle configuration were found with and without the aid of the fluid management system. It was found that the fluid management system increased heat fluxes on the average of 30 W/cm2 at similar values of superheat. Unfortunately, the effectiveness of this array at removing heat at full levels of suction is approximately 50% & 40% of a single nozzle at respective 10„aC & 15„aC values of superheat. The heat transfer data more closely resembled convective pooling boiling. Thus, it was concluded that the poor heat transfer was due to flooding occurring which made the heat transfer mechanism mainly forced convective boiling and not spray cooling. Finally, Chapter four gives a detailed guide for the design and construction of a high heat flux heater for experimental uses where accurate measurements of surface temperatures and heat fluxes are extremely important. The heater designs presented allow for different testing applications; however, an emphasis is placed on heaters designed for use with spray cooling.
Show less - Date Issued
- 2005
- Identifier
- CFE0000473, ucf:46351
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000473
