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Title: Fundamental Properties of Metallic Nanolasers.
Creator: Hayenga, William, Khajavikhan, Mercedeh, Christodoulides, Demetrios, Likamwa, Patrick, Abdolvand, Reza, University of Central Florida
Abstract / Description: The last two decades have witnessed tremendous advancements in the area of nanophotonics and plasmonics, which has helped propel the development of integrated photonic sources. Of central importance to such circuits is compact, scalable, low threshold, and efficient coherent sources that can be driven at high modulation frequencies. In this regard, metallic nanolasers offer a unique platform. Their introduction has enabled confinement of light at a subwavelength scale and the ultra-small size...
Show moreThe last two decades have witnessed tremendous advancements in the area of nanophotonics and plasmonics, which has helped propel the development of integrated photonic sources. Of central importance to such circuits is compact, scalable, low threshold, and efficient coherent sources that can be driven at high modulation frequencies. In this regard, metallic nanolasers offer a unique platform. Their introduction has enabled confinement of light at a subwavelength scale and the ultra-small size of the modes afforded by these structures allows for cavity enhancing effects that can help facilitate thresholdless lasing and large direct modulation bandwidths. In this report, I present my work on the study of the fundamental properties of metallic nanolasers. I start with a rate equation model to predict threshold behavior and the modulation response of metallic nanolasers. Next, I explain the second-order coherence measurement setup that was built, based on a modified Hanbury-Brown and Twiss experiment, to assess the intensity autocorrelation of various optically pumped metallic nanolasers. These studies concluded that metallic coaxial and disk-shaped nanolasers are capable of generating truly coherent radiation. Subsequently, design considerations are taken into account for electrically pumped coaxial nanolasers. This has led to the demonstration of electrically injected coaxial and disk-shaped nanolasers at cryogenic temperatures. Lastly, the appearance of collective behaviors in metallic nanolasers lattices is explored. Individually supporting modes that are highly vectorial by nature, when such cavities are fabricated in close proximity to one another, coupling through their overlapping fields results in the formation of a set of supermodes. The tendency of the system to minimize the overall loss leads to each element of the lattice having a geometric dependent field distribution and helps promotes single-mode lasing. We show both through simulations and experimentally that this effect can lead to the direct generation of vector vortices.
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Date Issued: 2018
Identifier: CFE0007752, ucf:52391
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007752

Title: Multiscale simulation of laser ablation and processing of semiconductor materials.
Creator: Shokeen, Lalit, Schelling, Patrick, Kar, Aravinda, Vaidyanathan, Rajan, Su, Ming, Kara, Abdelkader, University of Central Florida
Abstract / Description: We present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The...
Show moreWe present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature density-functional theory (DFT), including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range of fluence values is simulated resulting in heterogeneous melting, homogenous melting, and ablation. The results presented demonstrate that phase transitions can usually be described by ordinary thermal processes even when the electronic temperature Te is much greater than the lattice temperature TL during the transition. However, the evolution of the system and details of the phase transitions depend strongly on Te and corresponding density of broken bonds. For high enough laser fluence, homogeneous melting is followed by rapid expansion of the superheated liquid and ablation. Rapid expansion of the superheated liquid occurs partly due to the high pressures generated by a high density of broken bonds. As a result, the system is readily driven into the liquid-vapor coexistence region, which initiates phase explosion. The results strongly indicates that phase explosion, generally thought of as an ordinary thermal process, can occur even under strong non-equilibrium conditions when Te (>)(>)TL. In summary, a detailed investigation of laser-solid interactions in silicon is presented for femtosecond laser pulse that yields strong far-from-equilibrium conditions.
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Date Issued: 2012
Identifier: CFE0004599, ucf:49206
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004599

Title: Electrical Parasitic Bandwidth Limitations of Oxide-Free Lithographic Vertical-Cavity Surface-Emitting Lasers.
Creator: Yang, Xu, Deppe, Dennis, Fathpour, Sasan, Wu, Shintson, Gong, Xun, University of Central Florida
Abstract / Description: Nowadays, Vertical-Cavity Surface-Emitting Lasers (VCSELs) are the most popular optical sources in short-reach data communications. In the commercial oxide VCSEL technology, an oxide aperture is created inside resonant cavity in realizing good mode and current confinement, however, high electrical resistance comes along with forming the oxide aperture and the electrical parasitic bandwidth becomes the main limitation in modulation speed. In this report, electrical bandwidths of oxide-free...
Show moreNowadays, Vertical-Cavity Surface-Emitting Lasers (VCSELs) are the most popular optical sources in short-reach data communications. In the commercial oxide VCSEL technology, an oxide aperture is created inside resonant cavity in realizing good mode and current confinement, however, high electrical resistance comes along with forming the oxide aperture and the electrical parasitic bandwidth becomes the main limitation in modulation speed. In this report, electrical bandwidths of oxide-free lithographic VCSELs have been studied along with their general lasing properties. Due to the new ways of fabricating the aperture, record low resistances have been achieved in oxide-free lithographic VCSELs with various sizes, while high slope efficiencies and high output powers have been maintained. High speed simulation has been performed showing the very low differential resistances will benefit much to the electrical parasitic bandwidths, and are expected to produce higher modulation speed. A bottom emitting structure has been proposed and analyzed, showing reduction in both mirror resistance and capacitance will further improve the modulation speed. The total 3-dB modulation bandwidth is expected to be 50-80 GHz, much higher than the bandwidth reached in existing oxide VCSELs. Lithographic VCSELs also show superior lasing characteristics, including record low thermal resistance and record high output power. The maximum power exceeds 19 mW in a 6 (&)#181;m device and over 50 % power conversion efficiency has been achieved. A maximum single mode operation power of 5 mW has been observed from a 1 (&)#181;m diameter VCSEL. High temperature stress testing has been performed showing lithographic VCSELs can operate more reliably than oxide VCSELs under extreme operating conditions. Lithographic VCSEL with low electrical resistance, single-mode operation, high efficiency, and high power will be a strong candidate as the optical source in high speed data communications, as well as other applications such as high power VCSEL arrays and optical sensing.
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Date Issued: 2016
Identifier: CFE0006425, ucf:51491
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006425

Title: High Power Continuous Wave Quantum Cascade Lasers With Increased Ridge Width.
Creator: Todi, Ankesh, Lyakh, Arkadiy, Huo, Qun, Tetard, Laurene, University of Central Florida
Abstract / Description: Quantum Cascade Lasers have recently gained considerable attention for their capability to emit infrared radiation in a broad infrared spectral region, very compact dimensions, and high optical power/efficiency. Increasing continuous wave optical power is one of the main research directions in the field. A straightforward approach to increasing optical power in the pulsed regime is to increase number of stages in the cascade structure. However, due to a low active region thermal conductivity,...
Show moreQuantum Cascade Lasers have recently gained considerable attention for their capability to emit infrared radiation in a broad infrared spectral region, very compact dimensions, and high optical power/efficiency. Increasing continuous wave optical power is one of the main research directions in the field. A straightforward approach to increasing optical power in the pulsed regime is to increase number of stages in the cascade structure. However, due to a low active region thermal conductivity, the increase in number of stages leads to active region overheating in continuous wave operation. In this work, an alternative approach to power scaling with device dimensions is explored: number of stages is reduced to reduce active region thermal resistance, while active region lateral size is increased for reaching high optical power level. Using this approach, power scaling for active region width increase from 10(&)#181;m to 20(&)#181;m is demonstrated for the first time. An analysis based on a simple semi-empirical model suggests that laser power can be significantly improved by increasing characteristic temperature T0 that describes temperature dependence of laser threshold current density.
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Date Issued: 2017
Identifier: CFE0007137, ucf:52299
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007137

Title: EXTERNAL CAVITY MULTIWAVELENGTH SEMICONDUCTOR MODE-LOCKED LASER GAIN DYNAMICS.
Creator: Archundia-Berra, Luis, Delfyett, Peter, University of Central Florida
Abstract / Description: External cavity semiconductor mode-locked lasers can produce pulses of a few picoseconds. The pulses from these lasers are inherently chirped with a predominant linear chirp component that can be compensated resulting in sub-picosecond pulses. External cavity semiconductor mode-locked lasers can be configured as multiwavelength pulse sources and are good candidates for time and wavelength division multiplexing applications. The gain medium in external cavity semiconductor mode-locked lasers...
Show moreExternal cavity semiconductor mode-locked lasers can produce pulses of a few picoseconds. The pulses from these lasers are inherently chirped with a predominant linear chirp component that can be compensated resulting in sub-picosecond pulses. External cavity semiconductor mode-locked lasers can be configured as multiwavelength pulse sources and are good candidates for time and wavelength division multiplexing applications. The gain medium in external cavity semiconductor mode-locked lasers is a semiconductor optical amplifier (SOA), and passive and hybrid mode-locked operation are achieved by the introduction of a saturable absorber (SA) in the laser cavity. Pump-probe techniques were used to measure the intracavity absorption dynamics of a SA in an external cavity semiconductor mode-locked laser and the gain dynamics of a SOA for the amplification of diverse pulses. The SOA gain dynamics measurements include the amplification of 750 fs pulses, 6.5 ps pulses, multiwavelength pulses and the intracavity gain dynamics of an external cavity multiwavelength semiconductor mode-locked laser. The experimental results show how the inherent chirp on pulses from external cavity semiconductor mode-locked lasers results in a slow gain depletion without significant fast gain dynamics. In the multiwavelength operation regime of these lasers, the chirp broadens the temporal pulse profile and decreases the temporal beating resulting from the phase correlation among wavelength channels. This results in a slow gain depletion mitigating nonlinearities and gain competition among wavelength channels in the SOA supporting the multiwavelength operation of the laser. Numerical simulations support the experimental results.
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Date Issued: 2006
Identifier: CFE0001359, ucf:46984
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001359

Title: MONOLITHIC INTEGRATION OF DUAL OPTICAL ELEMENTS ON HIGH POWER SEMICONDUCTOR LASERS.
Creator: vaissie, laurent, Johnson, Eric, University of Central Florida
Abstract / Description: This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to...
Show moreThis dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform grating and a self-consistent model of the broad area active region. Improvement of the near-field intensity profile in good agreement with the FDTD model is demonstrated by varying the duty cycle from 20% to 55% and including the aspect ratio dependent etching (ARDE) for sub-micron features. The grating diffraction efficiency is estimated to be higher than 95% using a detailed analysis of the losses mechanisms of the device. The grating reflectivity is estimated to be as low as 2.10-4. The low reflectivity of the light extraction process is shown to increase the device efficiency and efficiently suppress lasing oscillations if both cleaved facets are replaced by grating couplers to produce 1.5W QCW with 11nm bandwidth into a single spot a few mm above the device. Peak power in excess of 30W without visible COMD is achieved in this case. Having optimized, the light extraction process, we demonstrate the integration of three different optical functions on the substrate of the surface-emitting laser. First, a 40 level refractive microlens milled using focused ion beam shows a twofold reduction of the full-width half maximum 1mm above the device, showing potential for monolithic integration of coupling optics on the wafer. We then show that differential quantum efficiency of 65%, the highest reported for a grating-coupled device, can be achieved by lowering the substrate reflectivity using a 200nm period tapered subwavelength grating that has a grating wavevector oriented parallel to the electric field polarization. The low reflectivity structure shows trapezoidal sidewall profiles obtained using a soft mask erosion technique in a single etching step. Finally, we demonstrate that, unlike typical methods reported so far for in-plane beam-shaping of laser diodes, the integration of a beam-splitting element on the device substrate does not affect the device efficiency. The proposed device configuration can be tailored to satisfy a wide range of applications including high power pump lasers, superluminescent diodes, or optical amplifiers applications.
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Date Issued: 2004
Identifier: CFE0000223, ucf:46253
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000223

Title: Broad Bandwidth Optical Frequency Combs from Low Noise, High Repetition Rate Semiconductor Mode-Locked Lasers.
Creator: Klee, Anthony, Delfyett, Peter, Vanstryland, Eric, Schulzgen, Axel, DeSalvo, Richard, University of Central Florida
Abstract / Description: Mode-locked lasers have numerous applications in the areas of communications, spectroscopy, and frequency metrology. Harmonically mode-locked semiconductor lasers with external ring cavities offer a unique combination of benefits in that they can produce high repetition rate pulse trains with low timing jitter, achieve narrow axial mode linewidths, have the potential for entire monolithic integration on-chip, feature high wall-plug efficiency due to direct electrical pumping, and can be...
Show moreMode-locked lasers have numerous applications in the areas of communications, spectroscopy, and frequency metrology. Harmonically mode-locked semiconductor lasers with external ring cavities offer a unique combination of benefits in that they can produce high repetition rate pulse trains with low timing jitter, achieve narrow axial mode linewidths, have the potential for entire monolithic integration on-chip, feature high wall-plug efficiency due to direct electrical pumping, and can be engineered to operate in different wavelength bands of interest. However, lasers based on InP/InGaAsP quantum well devices which operate in the important telecom C-band have thus far been relatively limited in bandwidth as compared to competing platforms. Broad bandwidth is critical for increasing information carrying capacity and enabling femtosecond pulse production for coherent continuum generation in offset frequency stabilization. The goal of the work in this dissertation is to maximize the bandwidth of semiconductor lasers, bringing them closer to reaching their full potential as all-purpose sources.Dispersion in the laser cavity is a primary limiter of the achievable bandwidth in the laser architectures covered in this dissertation. In the first part of this dissertation, an accurate self-referenced technique based on multi-heterodyne detection is developed for measuring the spectral phase of a mode-locked laser. This technique is used to characterize the dispersion in several semiconductor laser architectures. In the second part, this knowledge is applied to reduce the dispersion in a laser cavity using a programmable pulse shaper, and thus increase the laser's spectral bandwidth. We demonstrate a 10 GHz frequency comb with bandwidth spanning 5 THz, representing a twofold improvement over the previously achievable bandwidth. Finally, this laser is converted to a stand-alone system by reconfiguring it as a coupled opto-electronic oscillator and a novel stabilization scheme is presented.
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Date Issued: 2016
Identifier: CFE0006129, ucf:51184
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006129

Title: DISPERSION-MANAGED BREATHING-MODE SEMICONDUCTOR MODE-LOCKED RING LASER: EXPERIMENTAL STUDY, NUMERICAL SIMULATIONS AND APPLICATIONS.
Creator: Resan, Bojan, Delfyett, Peter J., University of Central Florida
Abstract / Description: A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching...
Show moreA novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short as 185 fs, with a peak power of ~230 w, and a focused intensity of ~4.6 gw/cm2 are generated by linear down chirp compensation and characterized by shg-frog method. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system. The very good agreement between the simulated and the measured results verifies our understanding and ability to control the physical mechanisms involved in the pulse shaping within the ring cavity. Application trends such as continuum generation via a photonic crystal fiber, two-photon fluorescence imaging, and ultrafast pulse source for pump-probe experiments are demonstrated.
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Date Issued: 2004
Identifier: CFE0000176, ucf:46155
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000176

Title: LOW NOISE, HIGH REPETITION RATE SEMICONDUCTOR-BASED MODE-LOCKED LASERS FOR SIGNAL PROCESSING AND COHERENT COMMUNICATIONS.
Creator: Quinlan, Franklyn, Delfyett, Peter, University of Central Florida
Abstract / Description: This dissertation details work on high repetition rate semiconductor mode-locked lasers. The qualities of stable pulse trains and stable optical frequency content are the focus of the work performed. First, applications of such lasers are reviewed with particular attention to applications only realizable with laser performance such as presented in this dissertation. Sources of timing jitter are also reviewed, as are techniques by which the timing jitter of a 10 GHz optical pulse train may be...
Show moreThis dissertation details work on high repetition rate semiconductor mode-locked lasers. The qualities of stable pulse trains and stable optical frequency content are the focus of the work performed. First, applications of such lasers are reviewed with particular attention to applications only realizable with laser performance such as presented in this dissertation. Sources of timing jitter are also reviewed, as are techniques by which the timing jitter of a 10 GHz optical pulse train may be measured. Experimental results begin with an exploration of the consequences on the timing and amplitude jitter of the phase noise of an RF source used for mode-locking. These results lead to an ultralow timing jitter source, with 30 fs of timing jitter (1 Hz to 5 GHz, extrapolated). The focus of the work then shifts to generating a stabilized optical frequency comb. The first technique to generating the frequency comb is through optical injection. It is shown that not only can injection locking stabilize a mode-locked laser to the injection seed, but linewidth narrowing, timing jitter reduction and suppression of superfluous optical supermodes of a harmonically mode-locked laser also result. A scheme by which optical injection locking can be maintained long term is also proposed. Results on using an intracavity etalon for supermode suppression and optical frequency stabilization then follow. An etalon-based actively mode-locked laser is shown to have a timing jitter of only 20 fs (1Hz-5 GHz, extrapolated), optical linewidths below 10 kHz and optical frequency instabilities less than 400 kHz. By adding dispersion compensating fiber, the optical spectrum was broadened to 2 THz and 800 fs duration pulses were obtained. By using the etalon-based actively mode-locked laser as a basis, a completely self-contained frequency stabilized coupled optoelectronic oscillator was built and characterized. By simultaneously stabilizing the optical frequencies and the pulse repetition rate to the etalon, a 10 GHz comb source centered at 1550 nm was realized. This system maintains the high quality performance of the actively mode-locked laser while significantly reducing the size weight and power consumption of the system. This system also has the potential for outperforming the actively mode-locked laser by increasing the finesse and stability of the intracavity etalon. The final chapter of this dissertation outlines the future work on the etalon-based coupled optoelectronic oscillator, including the incorporation of a higher finesse, more stable etalon and active phase noise suppression of the RF signal. Two appendices give details on phase noise measurements that incorporate carrier suppression and the noise model for the coupled optoelectronic oscillator.
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Date Issued: 2008
Identifier: CFE0002252, ucf:47878
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002252

Title: NEW LASER TECHNOLOGIES: ANALYSIS OF QUANTUM DOT ANDLITHOGRAPHIC LASER DIODES.
Creator: Demir, Abdullah, Deppe, Dennis, University of Central Florida
Abstract / Description: The first part of this dissertation presents a comprehensive study of quantum dot (QD) lasers threshold characteristics. The threshold temperature dependence of a QD laser diode is studied in different limits of p-doping, hole level spacing and inhomogeneous broadening. Theoretical analysis shows that the threshold current of a QD laser in the limit of uniform QDs is not temperature independent and actually more temperature sensitive than the quantum well laser. The results also explain the...
Show moreThe first part of this dissertation presents a comprehensive study of quantum dot (QD) lasers threshold characteristics. The threshold temperature dependence of a QD laser diode is studied in different limits of p-doping, hole level spacing and inhomogeneous broadening. Theoretical analysis shows that the threshold current of a QD laser in the limit of uniform QDs is not temperature independent and actually more temperature sensitive than the quantum well laser. The results also explain the experimental trends of negative characteristic temperature observed in QD lasers and clarify how the carrier distribution mechanisms inside and among the QDs affect the threshold temperature dependence of a QD laser diode. The second part is on the experimental demonstration of lithographic lasers. Today's vertical-cavity surface-emitting lasers (VCSELs) based on oxide-aperture suffer from serious problems such as heat dissipation, internal strain, reliability, uniformity and size scaling. The lithographic laser provides solutions to all these problems. The transverse mode and cavity are defined using only lithography and epitaxial crystal growth providing simultaneous mode- and current-confinement. Eliminating the oxide aperture is shown to reduce the thermal resistance of the device and leading to increased power density in smaller lasers. When it is combined with better mode matching to gain for smaller devices, high output power density of 58 kW/cm2 is possible for a 3 micron VCSEL with threshold current of 260 microamperes. These VCSELs also have grating-free single-mode single-polarization emission. The demonstration of lithographic laser diodes with good scaling properties is therefore an important step toward producing ultra-small size laser diodes with high output power density, high speed, high manufacturability and high reliability. Lithographic VCSELs ability to control size lithographically in a strain-free, high efficiency device is a major milestone in VCSEL technology.
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Date Issued: 2010
Identifier: CFE0003304, ucf:48494
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003304

Title: Noise, Stability, and Linewidth Performance of 10-GHz Optical Frequency Combs Generated from the Nested Cavity Architecture.
Creator: Bagnell, Kristina, Delfyett, Peter, Likamwa, Patrick, Schulzgen, Axel, DeSalvo, Richard, University of Central Florida
Abstract / Description: Optical frequency combs with wide mode spacing and low timing jitter are relied upon for both time domain and frequency domain applications. It has been previously demonstrated that surrounding a low-Q semiconductor laser chip with a long external fiber cavity and inserting a high finesse Fabry(-)P(&)#233;rot etalon into this cavity can produce a mode-locked laser with the desired high repetition rate and narrow optical mode linewidths which are of benefit to applications like photonic analog...
Show moreOptical frequency combs with wide mode spacing and low timing jitter are relied upon for both time domain and frequency domain applications. It has been previously demonstrated that surrounding a low-Q semiconductor laser chip with a long external fiber cavity and inserting a high finesse Fabry(-)P(&)#233;rot etalon into this cavity can produce a mode-locked laser with the desired high repetition rate and narrow optical mode linewidths which are of benefit to applications like photonic analog-to-digital conversion and astronomical spectrograph calibration. With this nested cavity architecture, the quality factor of the resonator is effectively determined by the product of the individual quality factors of the long fiber cavity and the short etalon cavity. Passive cavity Q and intracavity power both influence mode-locked laser mode linewidth, optical frequency stability, and the phase noise of the photodetected output. The nested cavity architecture has been demonstrated at 10-GHz mode spacing a few times with increasing etalon finesse and once with a high saturation power semiconductor gain medium to increase intracavity power. No one system has been fully characterized for long term optical frequency stability, phase noise and timing jitter, and optical mode linewidth. As a result, the trade-offs involved with advancing any one element (e.g. increasing cavity Q by adding fiber length and maintaining a broad spectral region of low dispersion for broad-bandwidth operation) have not been fully examined. In this work, three cavity elements are identified for study to influence cavity Q, effective noise spur suppression, and intracavity power, and the trade-offs of pushing those parameters to new limits are experimentally demonstrated. In the process, we also demonstrate nested cavity systems with fractional frequency instability on the order of 10^-13, timing jitter as low as 20 fs, and Hz-level linewidths.
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Date Issued: 2017
Identifier: CFE0006717, ucf:51883
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006717

Title: Thermal and Waveguide Optimization of Broad Area Quantum Cascade Laser Performance.
Creator: Suttinger, Matthew, Lyakh, Arkadiy, Bass, Michael, Vodopyanov, Konstantin, University of Central Florida
Abstract / Description: Quantum Cascade Lasers are a novel source of coherent infrared light, unique in their tunability over the mid-infrared and terahertz range of frequencies. Advances in bandgap engineering and semiconductor processing techniques in recent years have led to the development of highly efficient quantum cascade lasers capable of room temperature operation. Recent work has demonstrated power scaling with broad area quantum cascade lasers by increasing active region width beyond the standard ~10 ?m....
Show moreQuantum Cascade Lasers are a novel source of coherent infrared light, unique in their tunability over the mid-infrared and terahertz range of frequencies. Advances in bandgap engineering and semiconductor processing techniques in recent years have led to the development of highly efficient quantum cascade lasers capable of room temperature operation. Recent work has demonstrated power scaling with broad area quantum cascade lasers by increasing active region width beyond the standard ~10 ?m. Taking into account thermal effects caused by driving a device with electrical power, an experimentally fitted model is developed to predict the optical power output in both pulsed and continuous operation with varying device geometry and minor changes to quantum cascade laser active region design. The effects of the characteristic temperatures of threshold current density and slope efficiency, active region geometry, and doping, on output power are studied in the model. The model is then used to refine the active region design for increased power out in continuous operation for a broad area design. Upon testing the new design, new thermal effects on rollover current density are observed. The model is then refined to reflect the new findings and more accurately predict output power characteristics.
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Date Issued: 2017
Identifier: CFE0007296, ucf:52174
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007296

Title: QUANTUM DOT BASED MODE-LOCKED SEMICONDUCTOR LASERS AND APPLICATIONS.
Creator: Kim, Jimyung, Delfyett, Peter, University of Central Florida
Abstract / Description: In this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-PÃƒÂƒÃ‚ÂƒÃƒÂ‚Ã‚Â©rot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot...
Show moreIn this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-PÃƒÂƒÃ‚ÂƒÃƒÂ‚Ã‚Â©rot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot lasers is studied. Cavity length dependent lasing via ground state and/or excited state transitions is observed from quantum dot lasers and the optical gain from both transitions is measured. Stable optical pulse trains via ground and excited state transitions are generated using a grating coupled external cavity with a curved two-section device. Large differences in the applied reverse bias voltage on the saturable absorber are observed for stable mode-locking from the excited and ground state mode-locking regimes. The optical pulses from quantum dot mode-locked lasers are investigated in terms of chirp sign and linear chirp magnitude. Upchirped pulses with large linear chirp magnitude are observed from both ground and excited states. Externally compressed pulse widths from the ground and excited states are 1.2 ps and 970 fs, respectively. Ground state optical pulses from monolithic mode-locked lasers e.g., two-section devices and colliding pulse mode-locked lasers, are also studied. Transformed limited optical pulses (~4.5 ps) are generated from a colliding pulse mode-locked semiconductor laser. The above threshold linewidth enhancement factor of quantum dot Fabry-PÃƒÂƒÃ‚ÂƒÃƒÂ‚Ã‚Â©rot lasers is measured using the continuous wave injection locking method. A strong spectral dependence of the linewidth enhancement factor is observed around the gain peak. The measured linewidth enhancement factor is highest at the gain peak, but becomes lower 10 nm away from the gain peak. The lowest linewidth enhancement factor is observed on the anti-Stokes side. The spectral dependence of the pulse duration from quantum dot based mode-locked lasers is also observed. Shorter pulses and reduced linear chirp are observed on the anti-Stokes side and externally compressed 660 fs pulses are achieved in this spectral regime. A novel clock recovery technique using passively mode-locked quantum dot lasers is investigated. The clock signal (~4 GHz) is recovered by injecting an interband optical pulse train to the saturable absorber section. The excited state clock signal is recovered through the ground state transition and vice-versa. Asymmetry in the locking bandwidth is observed. The measured locking bandwidth is 10 times wider when the excited state clock signal is recovered from the ground state injection, as compared to recovering a ground state clock signal from excited state injection.
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Date Issued: 2010
Identifier: CFE0003295, ucf:48493
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003295

Title: Intrinsic Modulation Response Modeling and Analysis for Lithographic Vertical-Cavity Surface-Emitting Lasers.
Creator: Li, Mingxin, Deppe, Dennis, Fathpour, Sasan, Wu, Shintson, Malocha, Donald, University of Central Florida
Abstract / Description: Vertical-cavity surface-emitting lasers (VCSELs) have been greatly improved and successfully commercialized over the past few decades owing to their ability to provide both mode and current confinement that enables low energy consumption, high efficiency and high modulation speed. However, further improvement of oxide VCSELs is limited by the nature of the oxide aperture because of self-heating, internal strain and difficulties in precise size control. In this dissertation, VCSELs using...
Show moreVertical-cavity surface-emitting lasers (VCSELs) have been greatly improved and successfully commercialized over the past few decades owing to their ability to provide both mode and current confinement that enables low energy consumption, high efficiency and high modulation speed. However, further improvement of oxide VCSELs is limited by the nature of the oxide aperture because of self-heating, internal strain and difficulties in precise size control. In this dissertation, VCSELs using lithographic approach are demonstrated to overcome the limitations of oxide VCSELs, in which an intra-cavity phase shifting mesa is applied to define the device size and provide optical mode and electrical current confinement instead of an oxide aperture. A newly developed model of intrinsic modulation response is proposed and analyzed to focus on the thermal limit of the modulation speed of VCSELs. The results show that both the temperature dependent differential gain and stimulated emission rate impact laser speed and the stimulated emission rate dominates the speed limit. Thermal limits of modulation response are compared for oxide and lithographic VCSELs for various sizes. The results predict that the intrinsic modulation response can be significantly increased by using lithographic VCSELs due to low thermal resistance and reduced mode volume while maintaining high efficiency. The intrinsic bandwidth could exceed 100 GHz for a 2-?m-diameter lithographic VCSEL. Combined with low electrical parasitics, it is expected to produce over 100 Gb/s data rate from a single directly modulated laser. VCSELs designed for high speed are discussed and their characteristics are demonstrated.
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Date Issued: 2016
Identifier: CFE0006346, ucf:51556
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006346

Title: Ultrafast Laser Material Processing For Photonic Applications.
Creator: Ramme, Mark, Richardson, Martin, Fathpour, Sasan, Sundaram, Kalpathy, Kar, Aravinda, University of Central Florida
Abstract / Description: Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of...
Show moreFemtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the light-matter interaction mechanism occurring at high pulse repetition rates. A novel structure on the sample surface in the form of nano-fibers was observed when the bulk material was irradiated with high repetition rate pulse trains.To utilize the advantages of the FLDW technique even further, a transfer of the technology from dielectric to semiconductor materials is investigated. However, this demands detailed insight of the absorption and modification processes themselves. Experiments and the results suggested that non-linear absorption, specifically avalanche ionization, is the limiting factor inhibiting the application of FLDW to bulk semiconductors with today's laser sources.
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Date Issued: 2013
Identifier: CFE0004914, ucf:49626
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004914

Title: INTEGRATED WAVELENGTH STABILIZATION OF BROAD AREA SEMICONDUCTOR LASERS USING A DUAL GRATING REFLECTOR.
Creator: O'Daniel, Jason, Johnson, Eric, University of Central Florida
Abstract / Description: A new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting lasers is explored. This wavelength stabilization scheme relies on two gratings. The first grating is fabricated on the p-side of the semiconductor laser in close proximity to the laser waveguide such that it couples light out of the guided mode of the waveguide into a propagating mode in the substrate; this grating is known as the grating coupler. The second grating is fabricated on the n-side of...
Show moreA new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting lasers is explored. This wavelength stabilization scheme relies on two gratings. The first grating is fabricated on the p-side of the semiconductor laser in close proximity to the laser waveguide such that it couples light out of the guided mode of the waveguide into a propagating mode in the substrate; this grating is known as the grating coupler. The second grating is fabricated on the n-side of the substrate such that for the stabilization wavelength, this second grating operates in the Littrow condition and is known as the feedback grating. Furthermore with the proper design of the two gratings, the feedback grating will operate under total internal reflection conditions allowing a near unity retro-reflection of the light of the stabilization wavelength. The grating coupler and feedback grating together comprise a dual grating reflector (DGR). The DGR wavelength stabilization scheme is investigated both theoretically by means of numerical modeling and experimentally by integration of a DGR as a wavelength selective reflector into a single quantum well semiconductor laser with a gain peak centered at 975nm. Numerical modeling predicts a peak reflection of approximately 70% including losses and a spectral width of 0.3nm. The integration of a DGR into a semiconductor laser proved both the efficacy of the scheme and also allowed us to experimentally determine the effective reflectivity to be on the order of 62%; the spectral width of light output from these devices is typically on the order of 0.2nm. Furthermore, these devices had light-current characteristic slopes greater than 0.84W/A operating under continuous wave conditions. The DGR was then modified to provide a reflection with two spectral peaks. A semiconductor device incorporating this dual wavelength DGR was fabricated and tested. These devices showed a peak optical power of in excess of 5.5W and a light-current characteristic slope of 0.86W/A in quasi continuous wave operation; these devices also exhibit a large operating current range in which both wavelengths have comparable output powers. Another modified DGR design was investigated for the purpose of providing an even narrower spectral reflection. Devices incorporating this modified design provided an output with a spectral width as narrow as 0.06nm. DGRs were also integrated into an extremely broad area device of an unorthodox geometry; square devices that lase in two orthogonal directions were fabricated and tested. The last idea investigated was combining a DGR wavelength stabilized laser with a tapered semiconductor optical amplifier into a master oscillator power amplifier device, with the optical coupling between the two components provided by identical grating couplers disposed on the p-side surfaces of each of the devices. These master oscillator power amplifiers provide a peak power of 32W when operating under quasi continuous wave operation.
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Date Issued: 2006
Identifier: CFE0001392, ucf:47004
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001392

Title: HIGH POWER MODE-LOCKED SEMICONDUCTOR LASERS AND THEIR APPLICATIONS.
Creator: Lee, Shinwook, Delfyett, Peter, University of Central Florida
Abstract / Description: In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme Chirped Pulse Amplification (XCPA) is investigated. An eXtreme Chirped Pulse Oscillator (XCPO) implemented with a Theta cavity also based on a semiconductor gain is presented for generating more than 30ns frequency-swept pulses with more than 100pJ of pulse energy and 3.6ps compressed pulses directly from the oscillator. The XCPO shows the two distinct characteristics which are the scalability...
Show moreIn this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme Chirped Pulse Amplification (XCPA) is investigated. An eXtreme Chirped Pulse Oscillator (XCPO) implemented with a Theta cavity also based on a semiconductor gain is presented for generating more than 30ns frequency-swept pulses with more than 100pJ of pulse energy and 3.6ps compressed pulses directly from the oscillator. The XCPO shows the two distinct characteristics which are the scalability of the output energy and the mode-locked spectrum with respect to repetition rate. The laser cavity design allows for low repetition rate operation <100MHz. The cavity significantly reduces nonlinear carrier dynamics, integrated self phase modulation (SPM), and fast gain recovery in a Semiconductor optical Amplifier (SOA). Secondly, a functional device, called a Grating Coupled Surface Emitting Laser (GCSEL) is investigated. For the first time, passive and hybrid mode-locking of a GCSEL is achieved by using saturable absorption in the passive section of GCSEL. To verify the present limitation of the GCSEL for passive and hybrid mode-locking, a dispersion matched cavity is explored. In addition, a Grating Coupled surface emitting Semiconductor Optical Amplifier (GCSOA) is also investigated to achieve high energy pulse. An energy extraction experiment for GCSOA using stretched pulses generated from the colliding pulse semiconductor mode-locked laser via a chirped fiber bragg grating, which exploits the XCPA advantages is also demonstrated. Finally, passive optical cavity amplification using an enhancement cavity is presented. In order to achieve the interferometric stability, the Hänsch-Couillaud Method is employed to stabilize the passive optical cavity. The astigmatism-free optical cavity employing an acousto-optic modulator (AOM) is designed and demonstrated. In the passive optical cavity, a 7.2 of amplification factor is achieved with a 50 KHz dumping rate.
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Date Issued: 2008
Identifier: CFE0002093, ucf:47555
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002093

Title: Cryogenic performance projections for ultra-small oxide-free vertical-cavity surface-emitting lasers.
Creator: Bayat, Mina, Deppe, Dennis, Li, Guifang, Schoenfeld, Winston, Lyakh, Arkadiy, University of Central Florida
Abstract / Description: Small-sized vertical-cavity surface-emitting laser (VCSEL) may offer very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has application in supercomputers and superconducting for efficient computing and also focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free...
Show moreSmall-sized vertical-cavity surface-emitting laser (VCSEL) may offer very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has application in supercomputers and superconducting for efficient computing and also focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free VCSEL sizes of 2 to 6 (&)#181;m, that have been shown to operate efficiently at room temperature. Temperature dependent operation for optimally-designed VCSELs are studied by calculating the response of the laser at 77 K and 4 K to estimate their bias conditions needed to reach modulation speed for cryogenic optical links. The temperature influence is to decrease threshold for reducing temperature, and to increase differential gain for reducing temperature. The two effects predict very low bias currents for small cavity VCSELs to reach needed data speed for cryogenic optical data links. Projections are made for different cavity structures (half-wave cavity and full-wave cavity) shown that half-wave cavity structure has better performance. Changing the number of top-mirror pairs has also been studied to determine how cavity design impacts speed and bit energy. Our design and performance predictions paves the way for realizing highly efficient, ultra-small VCSEL arrays with applications in optical interconnects.
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Date Issued: 2019
Identifier: CFE0007782, ucf:52330
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007782

Title: LOW NOISE AND LOW REPETITION RATE SEMICONDUCTOR-BASED MODE-LOCKED LASERS.
Creator: Mnaridis, Dimitrios, Delfyett, Peter, University of Central Florida
Abstract / Description: The topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analog-to-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the...
Show moreThe topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analog-to-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the performance of previously demonstrated chirped pulse laser sources. Moreover, the focus is shifted to a specific application of the linearly chirped pulses, time-stretched photonic analog-to-digital conversion (TS ADC). The challenges of surpassing the speeds of current electronic converters are discussed, while the need for low noise linearly chirped pulse lasers becomes apparent for the realization of TS ADC. The experimental research addresses the topic of low noise chirped pulse generation in three distinct ways. First, a chirped pulse (Theta) laser with an intra-cavity Fabry-Perot etalon and a long-term referencing mechanism is developed that results in the reduction of the pulse-to-pulse energy noise. Noise suppression of >15 times is demonstrated. Moreover, an optical frequency comb with spacing equal to the repetition rate (H100 MHz) is generated using the etalon, resulting in the first reported demonstration of a system operating in the sub-GHz regime based on semiconductor gain. The path for the development of the Theta laser was laid by the precise characterization of the etalon used in this laser cavity design. A narrow linewidth laser is used in conjunction with an acousto-optic modulator externally swept for measuring the etalon's free spectral range with a sub-Hz precision, or 10 parts per billion. Furthermore, the measurement of the etalon long-term drift and birefringence lead to the development of a modified intra-cavity Hansch-Couillaud locking mechanism for the Theta laser. Moreover, an external feed-forward system was demonstrated that aimed at increasing the temporal/spectral uniformity of the optical pulses. A complete characterization of the system is demonstrated. On a different series of experiments, the pulses emitted by an ultra-low noise but high repetition rate mode-locked laser were demultiplexed resulting in a low repetition rate pulse train. Experimental investigation of the noise properties of the laser proved that they are preserved during the demultiplexing process. The noise of the electrical gate used in this experiment is also investigated which led into the development of a more profound understanding of the electrical noise of periodical pulses and a mechanism of measuring their noise. The appendices in this dissertation provide additional material used for the realization of the main research focus of the dissertation. Measurements of the group delay of the etalon used in the Theta laser are presented in order to demonstrate the limiting factors for the development of this cavity design. The description of a balancing routine is presented, that was used for expanding the dynamic range of intra-cavity active variable delay. At last, the appendix presents the calculations regarding the contribution of various parameters in the limitations of analog-to-digital conversion.
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Date Issued: 2011
Identifier: CFE0003874, ucf:48741
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003874

Title: Semiconductor Laser Based on Thermoelectrophotonics.
Creator: Liu, Xiaohang, Deppe, Dennis, Vanstryland, Eric, Dogariu, Aristide, Bass, Michael, University of Central Florida
Abstract / Description: This dissertation presents to our knowledge the first demonstration of a quantum well (QW) laser monolithically integrated with internal optical pump based on a light emitting diode (LED). The LED with high efficiency is operated in a thermoelectrophotonic (TEP) regime for which it can absorb both its own emitted light and heat. The LED optical pump can reduce internal optical loss in the QW laser, and enables monolithically integrated TEP heat pumps to the semiconductor laser. The design,...
Show moreThis dissertation presents to our knowledge the first demonstration of a quantum well (QW) laser monolithically integrated with internal optical pump based on a light emitting diode (LED). The LED with high efficiency is operated in a thermoelectrophotonic (TEP) regime for which it can absorb both its own emitted light and heat. The LED optical pump can reduce internal optical loss in the QW laser, and enables monolithically integrated TEP heat pumps to the semiconductor laser. The design, growth and fabrication processes of the laser chip are discussed, and its experimental data is presented. In order to further increase the TEP laser efficiency the development of QDs as the active region for TEP edge emitting laser (EEL) is studied. The usage of QD as TEP laser's active region is significant in terms of its low threshold current density, low internal optical loss and high reliability, which are mainly due to low transparency in QD laser. The crystal growth of self-organized QDs in molecular beam epitaxial (MBE) system and characterization of QDs are mentioned. The design, growth, processing and fabrication of a QD laser structure are detailed. The characteristics of laser devices with different cavity length are reported. QD active regions with different amount of material are grown to improve the active region performance. Theoretical calculations based on material parameters and semiconductor physics indicate that with proper design, the combination of high efficiency LED in TEP regime with a QD laser can result in the integrated laser chip power conversion efficiency exceeding unity.
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Date Issued: 2014
Identifier: CFE0005369, ucf:50477
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005369

semiconductor lasers (6)	+ -
Semiconductor Laser (4)	+ -
VCSEL (4)	+ -
mode-locked lasers (3)	+ -
semiconductor laser (3)	+ -

Mode-locked laser (2)	+ -
QCL (2)	+ -
Semiconductor (2)	+ -
Semiconductor Lasers (2)	+ -
Semiconductor laser (2)	+ -
Semiconductor lasers (2)	+ -
high speed modulation (2)	+ -
laser (2)	+ -
laser physics (2)	+ -
semiconductors (2)	+ -
Analog Links (1)	+ -
Beam Steering (1)	+ -
Coherent Detection (1)	+ -
Coupled Opto-Electronic Oscillator (1)	+ -
Cryogenics. (1)	+ -
Electro-Optic devices (1)	+ -
Exceptional Points (1)	+ -
External Cavity (1)	+ -
External Cavity Semiconductor Laser (1)	+ -
Fabry-Perot Etalon (1)	+ -
Frequency Combs (1)	+ -
GaAs (1)	+ -
Grating-coupled Surface-emitting Laser (1)	+ -
Harmonically Mode-Locked Lasers (1)	+ -
High-Speed Photonics (1)	+ -

University of Central Florida (32)	+ -
Delfyett, Peter (14)	+ -
Likamwa, Patrick (8)	+ -
Deppe, Dennis (6)	+ -
Christodoulides, Demetrios (4)	+ -

Fathpour, Sasan (4)	+ -
Li, Guifang (4)	+ -
Malocha, Donald (4)	+ -
DeSalvo, Richard (3)	+ -
Khajavikhan, Mercedeh (3)	+ -
Lyakh, Arkadiy (3)	+ -
Vanstryland, Eric (3)	+ -
Abdolvand, Reza (2)	+ -
Bass, Michael (2)	+ -
Johnson, Eric (2)	+ -
Kar, Aravinda (2)	+ -
Schoenfeld, Winston (2)	+ -
Schulzgen, Axel (2)	+ -
Wu, Shintson (2)	+ -
Archundia-Berra, Luis (1)	+ -
Bagnell, Kristina (1)	+ -
Bayat, Mina (1)	+ -
Bhooplapur, Sharad (1)	+ -
Choi, Myoung-Taek (1)	+ -
Delfyett, Peter J. (1)	+ -
Demir, Abdullah (1)	+ -
Dogariu, Aristide (1)	+ -
Dolguikh, Maxim (1)	+ -
Gong, Xun (1)	+ -
Hagan, David (1)	+ -

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