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TRANSMISSION LINES FOR IR SIGNAL ROUTING
Title
TRANSMISSION LINES FOR IR SIGNAL ROUTING.
Creator
Mandviwala, Tasneem, Boreman, Glenn, University of Central Florida
Abstract / Description
In this dissertation, the design, fabrication, and characterization of coplanar striplines, vias, and microstrip lines is investigated, from the point of view of developing interconnections for antenna-coupled infrared detectors operating in the 8- to 12-micron wavelength range. To our knowledge, no previous efforts have been made to study the performance of metallic-wire transmission lines at infrared frequencies. Both the design and fabrication of these structures present unique challenges....
Show moreIn this dissertation, the design, fabrication, and characterization of coplanar striplines, vias, and microstrip lines is investigated, from the point of view of developing interconnections for antenna-coupled infrared detectors operating in the 8- to 12-micron wavelength range. To our knowledge, no previous efforts have been made to study the performance of metallic-wire transmission lines at infrared frequencies. Both the design and fabrication of these structures present unique challenges. Because of attenuation and dispersion issues, the analytical formulas for transmission-line parameters that are valid below a few hundred GHz are not applicable in the infrared. Therefore, numerical modeling was performed to characterize the coplanar striplines and microstrip structures in terms of transmission-line parameters: characteristic impedance, attenuation constant and effective index of refraction. These parameters were extracted by fitting the computed impedance as a function of transmission-line length to the usual impedance transformation equation. The material properties used in the model are realistic, having been measured at the frequencies of interest by infrared ellipsometric techniques. The transmission-line parameters cannot be measured directly in the infrared, so experimental validation was carried out by measuring the response of a bolometer, which was connected to a dipole antenna by different lengths of both the coplanar and microstrip transmission lines. The modeled and measured responses for both types of transmission lines was in good agreement. A third type of signal-routing structure was also investigated, that of the vertical via, essentially a low-frequency connection that facilitates location of the bondpads away from the plane of the antenna. In the configuration studied, the vias pass vertically down through the SiO2 isolation layer and a groundplane, which provides electromagnetic isolation between the antenna and the structures that allow for signal-extraction from the bolometer. This type of interconnection will be useful for future detailed studies relating the angular antenna pattern to the spatial response of the antenna-coupled sensor.
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Date Issued
2006
Identifier
CFE0001304, ucf:47025
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0001304
Design and Simulation of Device Failure Models for Electrostatic Discharge (ESD) Event
Title
Design and Simulation of Device Failure Models for Electrostatic Discharge (ESD) Event.
Creator
Miao, Meng, Sundaram, Kalpathy, Yuan, Jiann-Shiun, Gong, Xun, Jin, Yier, Salcedo, Javier, University of Central Florida
Abstract / Description
In this dissertation, the research mainly focused on discussing ESD failure event simulation and ESD modeling, seeking solutions for ESD issues by simulating ESD event and predict possible ESD reliability problem in IC design. The research involves failure phenomenon caused by ESD/ EOS stress, mainly on the thermal failure due to inevitable self-heating during an ESD stress. Standard Complementary Metal-Oxide-Semiconductor (CMOS) process and high voltage Doublediffusion Metal-Oxide...
Show moreIn this dissertation, the research mainly focused on discussing ESD failure event simulation and ESD modeling, seeking solutions for ESD issues by simulating ESD event and predict possible ESD reliability problem in IC design. The research involves failure phenomenon caused by ESD/ EOS stress, mainly on the thermal failure due to inevitable self-heating during an ESD stress. Standard Complementary Metal-Oxide-Semiconductor (CMOS) process and high voltage Doublediffusion Metal-Oxide-Semiconductor (DMOS) process are used for design of experiment. A multi-function test platform High Power Pulse Instrument (HPPI) is used for ESD event evaluation and device characterization. SPICE-like software ADICE is for back-end simulation.Electrostatic Discharges (ESD) is one of the hazard that may affect IC circuit function and cause serious damage to the chip. The importance of ESD protection has been raised since the CMOS technology advanced and the dimension of transistors scales down. On the other hand, the variety of applications of chips is also making corresponding ESD protection difficult to meet different design requirement. Aside from typical requirements such as core circuit operation voltage, maximum accepted leakage current, breakdown conditions for the process and overall device sizes, special applications like radio frequency and power electronic requires ESD to be low parasitic capacitance and can sustain high level energy. In that case, a proper ESD protection design demands not only a robust ESD protection scheme, but co-design with the inner circuit. For that purpose, it is necessary to simulate the results of ESD impact on IC and find out possible weak point of the circuit and improve it. The first step of the simulation is to have corresponding models available. Unfortunately, ESD models, especially there are lack of circuit-level ESD models that provide quick and accurate prediction of ESD event.In this dissertation paper, ESD models, especially ESD failure models for device thermal failure are introduced, with modeling methodology accordingly. First, an introduction for ESD event and typical ESD protection schemes are introduced. Its purpose is to give basic concept of ESD. For ESD failure models, two typical types can be categorized depends on the physical mechanisms that cause the ESD damage. One is the gate oxide breakdown, which is electric field related. The other is the thermal-related failure, which stems from the self-heating effect associated with the large current passing through the ESD protection structure. The first one has become increasingly challenging with the aggressive scaling of the gate dielectric in advanced processes and ESD protection for that need to be carefully designed. The second one, thermal failure widely exists in semiconductor devices as long as there is ESD current flow through the device and accumulate heat at junctions. Considering the universality of thermal failure in ESD device, it is imperative to establish a model to simulate ESD caused thermal failure.Several works related to ESD model can be done. One crucial part for a failure model is to define the failure criterion. As common solution for ESD simulation and failure prediction. The maximum current level or breakdown voltage is used to judge whether a device fails under ESD stresses. Such failure criteria based on measurable voltage or current values are straightforward and can be easy to implemented in simulation tools. However, the shortcoming of these failure criteria is each failure criterion is specifically designed for certain ESD stress condition. For example, the failure voltage level for Human Body Model and Charged Device Model are quite different, and it is hard to judge a device's ESD capability under standard test conditions based on its transmission line pulse test result. So it is necessary to look deeper into the physical mechanism of device failure under ESD and find a more universal failure criterion for various stress conditions.As one of the major failure mechanisms, thermal failure evaluated by temperature is a more universal failure criterion for device failure under ESD stress. Whatever the stress model is, the device will fail if a critical temperature is reached at certain part inside the device and cause structural damage. Then finding out that critical temperature is crucial to define the failure point for device thermal failure. One chapter of this dissertation will focus on discussing this issue and propose a simple method to give close estimation of the real failure temperature for typical ESD devices.Combined these related works, a comprehensive diode model for ESD simulation is proposed. Using existing ESD models, diode I-V characteristic from low current turn-on to high current saturation can be simulated. By using temperature as the failure criterion, the last point of diode operation, or the second breakdown point, can be accurately predicted. Additional investigation of ESD capability of devices for special case like vertical GaN diode is discussed in Chapter IV. Due to the distinct material property of GaN, the vertical GaN diode exhibits unique and interesting quasi-static I-V curves quite different from conventional silicon semiconductor devices. And that I-V curve varies with different pulse width, indicating strong conductivity modulation of diode neutral region that will delay the complete turn-on of the vertical GaN diode.
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Date Issued
2017
Identifier
CFE0006626, ucf:51291
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006626
RESPONSE-CALIBRATION TECHNIQUES FOR ANTENNA-COUPLED INFRARED SENSORS
Title
RESPONSE-CALIBRATION TECHNIQUES FOR ANTENNA-COUPLED INFRARED SENSORS.
Creator
Krenz, Peter, Boreman, Glenn, University of Central Florida
Abstract / Description
Infrared antennas are employed in sensing applications requiring specific spectral, polarization, and directional properties. Because of their inherently small dimensions, there is significant interaction, both thermal and electromagnetic, between the antenna, the antenna-coupled sensor, and the low-frequency readout structures necessary for signal extraction at the baseband modulation frequency. Validation of design models against measurements requires separation of these effects so that the...
Show moreInfrared antennas are employed in sensing applications requiring specific spectral, polarization, and directional properties. Because of their inherently small dimensions, there is significant interaction, both thermal and electromagnetic, between the antenna, the antenna-coupled sensor, and the low-frequency readout structures necessary for signal extraction at the baseband modulation frequency. Validation of design models against measurements requires separation of these effects so that the response of the antenna-coupled sensor alone can be measured in a calibrated manner. Such validations will allow confident extension of design techniques to more complex infrared-antenna configurations. Two general techniques are explored to accomplish this goal. The extraneous signal contributions can be measured separately with calibration structures closely co-located near the devices to be characterized. This approach is demonstrated in two specific embodiments, for removal of cross-polarization effects arising from lead lines in an antenna-coupled infrared dipole, and for removal of distributed thermal effects in an infrared phased-array antenna. The second calibration technique uses scanning near-field microscopy to experimentally determine the spatial dependence of the electric-field distributions on the signal-extraction structures, and to include these measured fields in the computational electromagnetic model of the overall device. This approach is demonstrated for infrared dipole antennas which are connected to coplanar strip lines. Specific situations with open-circuit and short-circuit impedances at the termination of the lines are investigated.
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Date Issued
2010
Identifier
CFE0003177, ucf:48606
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0003177
Electromagnetic Environment in Payload Fairing Cavities
Title
Electromagnetic Environment in Payload Fairing Cavities.
Creator
Trout, Dawn, Wahid, Parveen, Wu, Xinzhang, Gong, Xun, Tang, Philip, University of Central Florida
Abstract / Description
An accurate determination of a spacecraft's radio frequency electromagnetic field environment during launch and flight is critical for mission success. Typical fairing structures consist of a parabolic nose and a cylindrical core with diameters of 1 to 5 meters resulting in electrically large dimensions for typical operational sources at S, C and X band where the free space wavelength varies from 0.15 m to 0.03 m. These electrically large size and complex structures at present have internal...
Show moreAn accurate determination of a spacecraft's radio frequency electromagnetic field environment during launch and flight is critical for mission success. Typical fairing structures consist of a parabolic nose and a cylindrical core with diameters of 1 to 5 meters resulting in electrically large dimensions for typical operational sources at S, C and X band where the free space wavelength varies from 0.15 m to 0.03 m. These electrically large size and complex structures at present have internal fairing electromagnetic field evaluation that is limited to general approximation methods and some test data. Though many of today's computational electromagnetic tools can model increasingly complex and large structures, they still have many limitations when used for field determination in electrically large cavities. In this dissertation, a series of test anchored, full wave computational electromagnetic models along with a novel application of the equivalent material property technique are presented to address the electrical, geometrical, and boundary constraints for electromagnetic field determination in composite fairing cavity structures and fairings with acoustic blanketing layers. Both external and internal excitations for these fairing configurations are examined for continuous wave and transient sources. A novel modification of the Nicholson Ross Weir technique is successfully applied to both blanketed aluminum and composite fairing structures and a significant improvement in computational efficiency over the multilayered model approach is obtained. The advantages and disadvantages of using commercially available tools by incorporating Multilevel Fast Multipole Method (MLFMM) and higher order method of moments (HO MoM) to extend their application of MoM to electrically large objects is examined for each continuous wave transmission case. The results obtained with these models are compared with those obtained using approximation techniques based on the Q factor, commonly utilized in the industry, and a significant improvement is seen in a prediction of the fields in these large cavity structures. A statistical distribution of data points within the fairing cavity is examined to study the nature of the fairing cavity field distribution and the effect of the presence of a spacecraft load on these fields is also discussed. In addition, a model with external application of Green's function is examined to address the shielding effectiveness of honeycomb panels in a fairing cavity. Accurate data for lightning induced effects within a fairing structure is not available and hence in this dissertation, a transmission line matrix method model is used to examine induced lightning effects inside a graphite composite fairing structure. The simulated results are compared with test data and show good agreement.
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Date Issued
2012
Identifier
CFE0004275, ucf:49505
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0004275