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STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY
Title
STUDY OF OXIDE BREAKDOWN, HOT CARRIER AND NBTI EFFECTS ON MOS DEVICE AND CIRCUIT RELIABILITY.
Creator
Liu, Yi, Yuan, Jiann.S., University of Central Florida
Abstract / Description
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to...
Show moreAs CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high gain with low noise figure, a LO to generate low noise signal with sufficient output power, wide tuning range, and high stability, and a mixer to up-convert or down-convert the signal with good linearity. However, the RF front-end circuit performance is very sensitive to the variation of device parameters. The experimental results show that device performance is degraded significantly subject to HC stress and BD. Therefore, RF front-end performance is degraded by HC and BD effects. With scaling and increasing chip power dissipation, operating temperatures for device have also been increasing. Another reliability concern, which is the negative bias temperature instability (NBTI) caused by the interface traps under high temperature and negative gate voltage bias, arises when the operation temperature of devices increases. NBTI has received much attention in recent year and it is found that NIT is present for all stress conditions and NOT is found to occur at high VG. Therefore, the probability of BD in pMOSFET increases with temperature since trapped charges during the NBTI process increase, thus resulting in percolation, a main cause of oxide degradation. The above effects can cause significant degradations in transistors, thus leading to the shifts of RF performance. This dissertation focuses on the following aspects: (1) RF performance degradation in nMOSFET and pMOSFET due to hot carrier and soft breakdown effects are examined experimentally and will be used for circuit application in the future. (2) A modeling method to analyze the gate oxide breakdown effects on RF nMOSFET has been proposed. The device performance drifts due to gate oxide breakdown are examined, breakdown spot resistance and total gate capacitance are extracted before and after stress for 0.16 um CMOS technology. (3) LC voltage controlled oscillator (VCO) performance degradation due to gate oxide breakdown effect is evaluated. (4) NBTI, HCI and BD combined effects on RF performance degradation are investigated. A physical picture illustrating the NBTI induced BD process is presented. A model to evaluate the time-to-failure (TTF) during NBTI is developed. DCIV method is used to extract the densities of NIT and NOT. Measurements show that there is direct correlation between the steplike increase in the gate current and the oxide-trapped charge (NOT). However, Breakdown has nothing to do with interface traps (NIT). (5) It is found that the degradation due to NSH stress is more severe than that of NS stress at high temperature. A model aiming to evaluate the stress-induced degradation is also developed.
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Date Issued
2005
Identifier
CFE0000505, ucf:46465
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0000505
Reconfigurable Reflectarray Antennas with Bandwidth Enhancement for High Gain, Beam-Steering Applications
Title
Reconfigurable Reflectarray Antennas with Bandwidth Enhancement for High Gain, Beam-Steering Applications.
Creator
Trampler, Michael, Gong, Xun, Wahid, Parveen, Jones, W Linwood, Chen, Kenle, Kuebler, Stephen, University of Central Florida
Abstract / Description
Reconfigurable reflectarrays are a class of antennas that combine the advantages of traditional parabolic antennas and phased array antennas. Chapter 1 discusses the basic operational theory of reflectarrays and their design. A review of previous research and the current status is also presented. Furthermore the inherent advantages and disadvantages of the reflectarray topography are presented. In chapter 2, a BST-integrated reflectarray operating at Ka band is presented. Due to the...
Show moreReconfigurable reflectarrays are a class of antennas that combine the advantages of traditional parabolic antennas and phased array antennas. Chapter 1 discusses the basic operational theory of reflectarrays and their design. A review of previous research and the current status is also presented. Furthermore the inherent advantages and disadvantages of the reflectarray topography are presented. In chapter 2, a BST-integrated reflectarray operating at Ka band is presented. Due to the monolithic integration of the tuning element, this design is then extended to V band where a novel interdigital gap configuration is utilized. Finally to overcome loss and phase limitations of the single resonant design, a BST-integrated, dual-resonance unit cell operating at Ka band is designed. While the losses are still high, a 360(&)deg; phase range is demonstrated.In chapter 3, the operational theory of dual-resonant array elements is introduced utilizing Q theory. An equivalent circuit is developed and used to demonstrate design tradeoffs. Using this theory the design procedure of a varactor tuned dual-resonant unit cell operating at X-band is presented. Detailed analysis of the design is performed by full-wave simulations and verified via measurements. In chapter 4, the array performance of the dual-resonance unit cell is analyzed. The effects of varying angles of incidence on the array element are studied using Floquet simulations. The beam scanning, cross-polarization and bandwidth performance of a 7(&)#215;7 element reflectarray is analyzed using full-wave simulations and verified via measurements.In chapter 5 a loss analysis of the dual-resonant reflectarray element is performed. Major sources of loss are identified utilizing full-wave simulations before an equivalent circuit is utilized to optimize the loss performance while maintaining a full phase range and improved bandwidth performance. Finally the dual-resonance unit cell is modified to support two linear polarizations. Overall, the operational and design theory of dual resonant reflectarray unit cells using Q theory is developed. A valuable equivalent circuit is developed and used to aid in array element design as well as optimize the loss and bandwidth performance. The proposed theoretical models provide valuable physical insight through the use of Q theory to greatly aid in reflectarray design
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Date Issued
2019
Identifier
CFE0007735, ucf:52457
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0007735
Frequency-Reconfigurable Microstrip Patch and Cavity-Backed Slot ESPARs
Title
Frequency-Reconfigurable Microstrip Patch and Cavity-Backed Slot ESPARs.
Creator
Ouyang, Wei, Gong, Xun, Vosoughi, Azadeh, Wahid, Parveen, Abdolvand, Reza, Kuebler, Stephen, University of Central Florida
Abstract / Description
Wireless communication systems have rapidly evolved over the past decade which has led to an explosion of mobile data traffic. Since more and more wireless devices and sensors are being connected, the transition from the current 4G/LTE mobile network to 5G is expected to happen within the next decade. In order to improve signal-to-noise ratio (SNR), system capacity, and link budget, beam steerable antenna arrays are desirable due to their advantage in spatial selectivity and high directivity....
Show moreWireless communication systems have rapidly evolved over the past decade which has led to an explosion of mobile data traffic. Since more and more wireless devices and sensors are being connected, the transition from the current 4G/LTE mobile network to 5G is expected to happen within the next decade. In order to improve signal-to-noise ratio (SNR), system capacity, and link budget, beam steerable antenna arrays are desirable due to their advantage in spatial selectivity and high directivity. Electronically steerable parasitic array radiator (ESPAR) that can achieve low-cost continuously beamsteering using varactor diodes have attracted a lot of attention. This dissertation explores bandwidth enhancement of the ESPAR using frequency-reconfigurable microstrip patch and cavity-backed slot (CBS) antennas. In chapter 2, an ESPAR of three closely-coupled rectangular patch elements that do not use phase shifters is presented; the beamsteering is realized by tunable reactive loads which are used to control the mutual coupling between the elements. Additional loading varactors are strategically placed on the radiating edge of all the antenna elements to achieve a 15% continuous frequency tuning range while simultaneously preserving the beamsteering capability at each operating frequency. Therefore, this frequency-reconfigurable ESPAR is able to provide spectrum diversity in addition to the spatial diversity inherent in a frequency-fixed ESPAR. A prototype of the patch ESPAR is fabricated and demonstrated to operate from 0.87 to 1.02 GHz with an instantaneous fractional bandwidth (FBW) of ~1%. At each operating frequency, this ESPAR is able to scan from -20 to +20 degrees in the H plane. However, the beamsteering of the patch ESPAR is limited in the H-plane and its instantaneous S11 fractional bandwidth (FBW) is very narrow. This dissertation also explores how to achieve 2-D beamsteering with enhanced FBW using CBS antennas. A 20-element cavity-backed slot antenna array is designed and fabricated based on a CBS ESPAR cross subarray in chapter 5. This ESPAR array is able to steer the main beam from +45 degrees to -45 degrees in the E plane and from +40 degrees to -40 degrees in the H plane, respectively, without grating lobes in either plane. The impedance matching is maintained below -10 dB from 6.0 to 6.4 GHz (6.4% fractional bandwidth) at all scan angles. In addition, the CBS ESPAR exhibits minimum beam squint at all scan angles within the impedance matching bandwidth. This array successfully demonstrates the cost savings and associated reduction in the required number of phase shifters in the RF front end by employing ESPAR technology.
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Date Issued
2019
Identifier
CFE0007699, ucf:52426
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0007699