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- Title
- DEBRIS CHARACTERIZATION AND MITIGATION OF DROPLET LASER PLASMA SOURCES FOR EUV LITHOGRAPHY.
- Creator
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Takenoshita, Kazutoshi, Richardson, Martin, University of Central Florida
- Abstract / Description
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Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under development for fabricating semiconductor devices with feature sizes smaller than 32 nm. The optics to be used in the EUVL steppers is reflective optics with multilayer mirror coatings on each surface. The wavelength of choice is 13.5 nm determined by the optimum reflectivity of the mirror coatings. The light source required for this wavelength is derived from a hot-dense plasma produced by either a gas...
Show moreExtreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under development for fabricating semiconductor devices with feature sizes smaller than 32 nm. The optics to be used in the EUVL steppers is reflective optics with multilayer mirror coatings on each surface. The wavelength of choice is 13.5 nm determined by the optimum reflectivity of the mirror coatings. The light source required for this wavelength is derived from a hot-dense plasma produced by either a gas discharge or a laser. This study concentrate only on the laser produced plasma source because of its advantages of scalability to higher repetition rates. The design of a the laser plasma EUVL light source consists of a plasma produced from a high-intensity focused laser beam from a solid/liquid target, from which radiation is generated and collected by a large solid angle mirror or array of mirrors. The collector mirrors have the same reflectivity characteristics as the stepper mirrors. The EUVL light source is considered as the combination of both the hot-dense plasma and the collector mirrors. The EUVL light sources required by the stepper manufacturers must have sufficient EUV output power and long operational lifetimes to meet market-determined chip production rates. The most influential factor in achieving the required EUV output power is the conversion efficiency (CE) of laser input energy relative to the EUV radiation collected. A high CE is demonstrated in a separate research program by colleagues in the Laser Plasma laboratory at CREOL. Another important factor for the light source is the reflectivity lifetime of the collection optics as mirror reflectivity can be degraded by deposition and ablation from the plasma debris. Realization of a high CE but low debris plasma source is possible by reducing the mass of the target, which is accomplished by using tin-doped droplet targets. These have sufficient numbers of tin atoms for high CE, but the debris generation is minimal. The first part of this study investigates debris emissions from tin-doped droplet targets, in terms of aerosols and ions. Numerous tin aerosols can be created during a single laser-target interaction. The effects these interactions are observed and the depositions are investigated using SEM, AFM, AES, XPS, and RBS techniques. The generation of aerosols is found to be the result of incomplete ionization of the target material, corresponding to non-optimal laser coupling to the target for maximum CE. In order to determine the threats of the ion emission to the collector mirror coatings from an optimal, fully ionized target, the ion flux is measured at the mirror distance using various techniques. The ion kinetic energy distributions obtained for individual ion species are quantitatively analyzed. Incorporating these distributions with Monte-Carlo simulations provide lifetime estimation of the collector mirror under the effect of ion sputtering. The current estimated lifetime the tin-doped droplet plasma source is only a factor of 500 less than the stepper manufacturer requirements, without the use of any mitigation schemes to stop these ions interacting with the mirror. The second part of this investigation explores debris mitigation schemes. Two mitigation schemes are applied to tin-doped droplet laser plasmas; electrostatic field mitigation, and a combination of a foil trap with a magnetic field. Both mitigation schemes demonstrate their effectiveness in suppressing aerosols and ion flux. A very small number of high-energy ions still pass through the combination of the two mitigation schemes but the sputtering caused by these ions is too small to offer a threat to mirror lifetime. It is estimated that the lifetime of the collector mirror, and hence the source lifetime, will be sufficient when tin-doped targets are used in combination with these mitigation schemes.
Show less - Date Issued
- 2006
- Identifier
- CFE0001289, ucf:46920
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001289
- Title
- RADIATION STUDIES OF THE TIN-DOPED MICROSCOPIC DROPLET LASER PLASMA LIGHT SOURCE SPECIFIC TO EUV LITHOGRAPHY.
- Creator
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Koay, Chiew-Seng, Richardson, Martin, University of Central Florida
- Abstract / Description
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Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology to be inserted in ~ 2009 for the mass production of IC chips with feature sizes
Show moreExtreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology to be inserted in ~ 2009 for the mass production of IC chips with feature sizes <35 nm. One major challenge to its implementation is the development of a 13.5 nm EUV source of radiation that meets the requirements of current roadmap designs of the source of illumination in commercial EUVL scanners. The light source must be debris-free, in a free-space environment with the imaging EUV optics that must provide sufficient, narrow spectral band EUV power to print 100 wafers/hr. To meet this need, extensive studies on emission from a laser plasma source utilizing tin-doped droplet target was conducted. Presented in this work, are the many optical techniques such as spectroscopy, radiometry, and imaging, that were employed to characterize and optimize emission from the laser plasma source State of the art EUV spectrographs were employed to observe the source's spectrum under various laser irradiation conditions. Comparing the experimental spectra to those from theory, has allowed the determination of the Sn ion stages responsible for emitting into the useful EUV bandwidth. Experimental results were compared to spectral simulations obtained using Collisional-Radiative Equilibrium (CRE) model, as well. Moreover, extensive measurements surveying source emission from 2 nm to 30 nm, which is the region of the electromagnetic spectrum defined as EUV, was accomplished. Absolutely calibrated metrology was employed with the Flying Circus instrument from which the source's conversion efficiency (CE)--from laser to the useful EUV energy--was characterized under various laser irradiation conditions. Hydrodynamic simulations of the plasma expansion together with the CRE model predicted the condition at which optimum conversion could be attained. The condition was demonstrated experimentally, with the highest CE to be slightly above 2%, which is the highest value among all EUV source contenders. In addition to laser intensity, the CE was found to depend on the laser wavelength. For better understanding, this observation is compared to results from simulations. Through a novel approach in imaging, the size of the plasma was characterized by recording images of the plasma within a narrow band, around 13.5 nm. The size, approximately 100 ìm, is safely within the etendue limit set by the optical elements in the EUV scanner. Finally, the notion of irradiating the target with multiple laser beams was explored for the possibility of improving the source's conversion efficiency.
Show less - Date Issued
- 2006
- Identifier
- CFE0000938, ucf:46733
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0000938
- Title
- LASER PLASMA RADIATION STUDIES FOR DROPLET SOURCES IN THE EXTREME ULTRAVIOLET.
- Creator
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Kamtaprasad, Reuvani, Richardson, Martin, University of Central Florida
- Abstract / Description
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The advancement of laboratory based Extreme Ultraviolet (EUV) radiation has escalated with the desire to use EUV as a source for semiconductor device printing. Laser plasmas based on a mass-limited target concept, developed within the Laser Plasma Laboratory demonstrate a much needed versatility for satisfying rigorous source requirements. This concept produces minimal debris concerns and allows for the attainment of high repetition rates as well as the accommodation of various laser and...
Show moreThe advancement of laboratory based Extreme Ultraviolet (EUV) radiation has escalated with the desire to use EUV as a source for semiconductor device printing. Laser plasmas based on a mass-limited target concept, developed within the Laser Plasma Laboratory demonstrate a much needed versatility for satisfying rigorous source requirements. This concept produces minimal debris concerns and allows for the attainment of high repetition rates as well as the accommodation of various laser and target configurations. This work demonstrates the generation of EUV radiation by creating laser plasmas from mass-limited targets with indium, tin, and antimony doped droplets. Spectral emission from the laser plasmas is quantified using a flat-field spectrometer. COWAN code oscillator strength predications for each of the dopants were convolved with narrow Gaussian functions creating synthetic spectra for the EUV region between 10 nm - 20 nm. A preliminary comparison was made between the theoretical spectra and experimental results. From this comparison, ion stage transitions for each of the hot dense plasmas generated were assessed.
Show less - Date Issued
- 2010
- Identifier
- CFE0003168, ucf:48597
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003168
- Title
- SPECTROSCOPIC STUDIES OF LASER PLASMAS FOR EUV SOURCES.
- Creator
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George, Simi, Richardson, Martin, University of Central Florida
- Abstract / Description
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With the availability of high reflectivity multilayer mirrors and zone plate lenses, the EUV region (5nm - 40nm) of the electromagnetic spectrum is currently being explored for applications of nanoscale printing and imaging. Advances made in this area have consequences for many areas of science. Research for producing a compact, bright EUV source for laboratory use has gained momentum in recent years. For this study, EUV radiation is produced by irradiating target materials using a focused...
Show moreWith the availability of high reflectivity multilayer mirrors and zone plate lenses, the EUV region (5nm - 40nm) of the electromagnetic spectrum is currently being explored for applications of nanoscale printing and imaging. Advances made in this area have consequences for many areas of science. Research for producing a compact, bright EUV source for laboratory use has gained momentum in recent years. For this study, EUV radiation is produced by irradiating target materials using a focused laser beam. Focused laser beam ionizes the target to create a hot, dense, pulsed plasma source, where emission is a result of the relaxation of excited levels. Spectroscopy is used as the main diagnostic to obtain the spectral signature of the plasma. Spectral characteristics are used to deduce the physical state of plasma, thus enabling the tuning of laser irradiance conditions to maximize the needed emission bandwidth. Various target materials are studied, as well as different target geometries, with spectroscopy below 200 nm on pulsed micro-plasmas being a particularly daunting task. Total range spectroscopy from 1 nm to greater than 1 micron is completed for tin-doped spherical droplet plasma source. Reliable plasma diagnostics require both accurate measurements and solid theoretical support in order to interpret the experimental results. Using existing 1D-hydrocode, temperature and density characteristics of the expanding plasma is simulated for any set of experimental conditions. Existing atomic codes written for calculating one-electron radial wavefunctions with LS-coupling scheme via Hartree-Fock method is used in order to gain details of the ion stages, populations, transitions, etc, contributing to the spectral data.
Show less - Date Issued
- 2007
- Identifier
- CFE0001972, ucf:47433
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001972
- Title
- EXTREME ULTRAVIOLET SPECTRAL STREAK CAMERA.
- Creator
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Szilagyi, John, Richardson, Martin, University of Central Florida
- Abstract / Description
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The recent development of extreme ultraviolet (EUV) sources has increased the need for diagnostic tools, and has opened up a previously limited portion of the spectrum. With ultrafast laser systems and spectroscopy moving into shorter timescales and wavelengths, the need for nanosecond scale imaging of EUV is increasing. EUVÂÂÂÂ's high absorption has limited the number of imaging options due...
Show moreThe recent development of extreme ultraviolet (EUV) sources has increased the need for diagnostic tools, and has opened up a previously limited portion of the spectrum. With ultrafast laser systems and spectroscopy moving into shorter timescales and wavelengths, the need for nanosecond scale imaging of EUV is increasing. EUVÂÂÂÂ's high absorption has limited the number of imaging options due to the many atomic resonances in this spectrum. Currently EUV is imaged with photodiodes and X-ray CCDs. However photodiodes are limited in that they can only resolve intensity with respect to time and X-ray CCDs are limited to temporal resolution in the microsecond range. This work shows a novel approach to imaging EUV light over a nanosecond time scale, by using an EUV scintillator to convert EUV to visible light imaged by a conventional streak camera. A laser produced plasma, using a mass-limited tin based target, provided EUV light which was imaged by a grazing incidence flat field spectrometer onto a Ce:YAG scintillator. The EUV spectrum (5 nm-20 nm) provided by the spectrometer is filter by a zirconium filter and then converted by the scintillator to visible light (550 nm) which can then be imaged with conventional optics. Visible light was imaged by an electron image tube based streak camera. The streak camera converts the visible light image to an electron image using a photocathode, and sweeps the image across a recording medium. The streak camera also provides amplification and gating of the image by the means of a micro channel plate, within the image tube, to compensate for low EUV intensities. The system provides 42 ns streaked images of light with a temporal resolution of 440 ps at a repetition rate of 1 Hz. Upon calibration the EUV streak camera developed in this work will be used in future EUV development.
Show less - Date Issued
- 2010
- Identifier
- CFE0003558, ucf:48905
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003558
- Title
- Precision Metrology of Laser Plasmas in the XUV Band.
- Creator
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Szilagyi, John, Richardson, Martin, Sundaram, Kalpathy, Abdolvand, Reza, Baudelet, Matthieu, Shivamoggi, Bhimsen, University of Central Florida
- Abstract / Description
-
The XUV band, a region of light spanning the wavelength range of 5 - 200 nm, is located between the Ultraviolet and X-ray regions of the electromagnetic spectrum. It is further divided into a 100 - 200 nm region called the Vacuum Ultraviolet (VUV), and a 5 (-) 100 nm region called the Extreme Ultraviolet (EUV). Applications of this light have been slow to develop due to the lack of suitable sources, efficient optics, and sensitive detectors. Recently, many industries such as the semiconductor...
Show moreThe XUV band, a region of light spanning the wavelength range of 5 - 200 nm, is located between the Ultraviolet and X-ray regions of the electromagnetic spectrum. It is further divided into a 100 - 200 nm region called the Vacuum Ultraviolet (VUV), and a 5 (-) 100 nm region called the Extreme Ultraviolet (EUV). Applications of this light have been slow to develop due to the lack of suitable sources, efficient optics, and sensitive detectors. Recently, many industries such as the semiconductor manufacturing industry, medical surgery, micromachining, microscopy, and spectroscopy have begun to benefit from the short wavelengths and the high photon energies of this light. At present, the semiconductor chip industry is the primary reason for the investment in, and development of, XUV sources, optics, and detectors. The demand for high power EUV light sources at 13.5 nm wavelength is driven by the development of the next generation of semiconductor lithography tools. The development of these tools enables the continued reduction in size, and the increase in transistor density of semiconductor devices on a single chip. Further development and investigation of laser produced plasma EUV light sources is necessary to increase the average optical power and reliability. This will lead to an increase in the speed of EUV lithographic processes, which are necessary for future generations of advanced chip design, and high volume semiconductor manufacturing. Micromachining, lithography, and microscopy benefit from improvements in resolution due to the shorter wavelengths of light in the VUV band. In order to provide adequate illumination for these applications, sources are required which are brighter and have higher average power. Laser produced plasma (LPP) VUV light sources are used extensively for lithography and defect detection in semiconductor manufacturing. Reductions in the wavelength and increases in the average power will increase the rate and yield of chip manufacture, as well as reduce the costs of semiconductor manufacture.The work presented in this thesis, describes the development of two laser plasma source facilities in the Laser Plasma Laboratory at UCF, which were designed to investigate EUV and VUV laser plasma sources. The HP-EUV-Facility was developed to optimize and demonstrate a high power 13.5 nm EUV LPP source. This facility provides high resolution spectroscopy across 10.5 - 20 nm, and absolute energy measurement of 13.5 nm +/- 2% in 2? sr. The VUV-MS-Facility was developed to investigate VUV emission characteristics of laser plasmas of various target geometries and chemistries. This facility provides absolute calibrated emission spectra for the 124 - 250 nm wavelength range, in addition to, at wavelength plasma imaging. Calibrated emission spectra, in-band power, and conversion efficiency are presented in this work for gas targets of Argon, Krypton, and Xenon and solid targets of Silicon, Copper, Molybdenum, Indium, Tantalum, Tin, and Zinc, across the laser intensity range of 8.0x10^6 (-) 3.2x10^12 W/cm2.
Show less - Date Issued
- 2017
- Identifier
- CFE0006805, ucf:51793
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006805
