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(1 - 6 of 6)
- Title
- Advanced Metrology and Diagnostic Loss Analytics for Crystalline Silicon Photovoltaics.
- Creator
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Schneller, Eric, Schoenfeld, Winston, Thomas, Jayan, Fenton, James, Coffey, Kevin, Sundaram, Kalpathy, University of Central Florida
- Abstract / Description
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Characterization plays a key role in developing a comprehensive understanding of the structure and performance of photovoltaic devices. High quality characterization methods enable researchers to assess material choices and processing steps, ultimately giving way to improved device performance and reduced manufacturing costs. In this work, several aspects of advanced metrology for crystalline silicon photovoltaic are investigated including in-line applications for manufacturing, off-line...
Show moreCharacterization plays a key role in developing a comprehensive understanding of the structure and performance of photovoltaic devices. High quality characterization methods enable researchers to assess material choices and processing steps, ultimately giving way to improved device performance and reduced manufacturing costs. In this work, several aspects of advanced metrology for crystalline silicon photovoltaic are investigated including in-line applications for manufacturing, off-line applications for research and development, and module/system level applications to evaluate long-term reliability. A frame work was developed to assess the cost and potential value of metrology within a manufacturing line. This framework has been published to an on-line calculator in an effort to provide the solar industry with an intuitive and transparent method of evaluating the economics of in-line metrology. One important use of metrology is in evaluating spatial non-uniformities, as localized defects in large area solar cells often reduce overall device performance. Techniques that probe spatial uniformity were explored and analysis algorithms were developed that provide insights regarding process non-uniformity and its impact on device performance. Finally, a comprehensive suite of module level characterization was developed to accurately evaluate performance and identify degradation mechanisms in field deployed photovoltaic modules. For each of these applications, case-studies were used to demonstrate the value of these techniques and to highlight potential use cases.
Show less - Date Issued
- 2016
- Identifier
- CFE0006499, ucf:51386
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006499
- Title
- External cavity mode-locked semiconductor lasers for the generation of ultra-low noise multi-gigahertz frequency combs and applications in multi-heterodyne detection of arbitrary optical waveforms.
- Creator
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Davila-Rodriguez, Josue, Delfyett, Peter, Likamwa, Patrick, Li, Guifang, Malocha, Donald, University of Central Florida
- Abstract / Description
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The construction and characterization of ultra-low noise semiconductor-based mode-locked lasers as frequency comb sources with multi-gigahertz combline-to-combline spacing is studied in this dissertation. Several different systems were built and characterized. The first of these systems includes a novel mode-locking mechanism based on phase modulation and periodic spectral filtering. This mode-locked laser design uses the same intra-cavity elements for both mode-locking and frequency...
Show moreThe construction and characterization of ultra-low noise semiconductor-based mode-locked lasers as frequency comb sources with multi-gigahertz combline-to-combline spacing is studied in this dissertation. Several different systems were built and characterized. The first of these systems includes a novel mode-locking mechanism based on phase modulation and periodic spectral filtering. This mode-locked laser design uses the same intra-cavity elements for both mode-locking and frequency stabilization to an intra-cavity, 1,000 Finesse, Fabry-P(&)#233;rot Etalon (FPE). On a separate effort, a mode-locked laser based on a Slab-Coupled Optical Waveguide Amplifier (SCOWA) was built. This system generates a pulse-train with residual timing jitter of (<)2 fs and pulses compressible to (<)1 ps. Amplification of these pulse-trains with an external SCOWA lead to 390 mW of average optical power without evident degradation in phase noise and pulses that are compressible to the sub-picosecond regime. Finally, a new laser is built using a 10,000 Finesse Fabry-P(&)#233;rot Etalon held in a vacuum chamber. The fluctuations in the optical frequency of the individual comb-lines over time periods longer than 12 minutes are shown to be significantly reduced to (<)100 kHz in a measurement that is limited by the linewidth of the reference source.The use of these comb sources as local oscillators in multi-heterodyne detection of arbitrary optical waveforms is explored in three different cases. 1) Sampling of mode-locked pulses, 2) sampling of phase modulated continuous wave light and 3) periodically filtered white light. The last experiment achieves spectral interferometry with unprecedented resolution.
Show less - Date Issued
- 2013
- Identifier
- CFE0004669, ucf:49863
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004669
- Title
- LOW NOISE AND LOW REPETITION RATE SEMICONDUCTOR-BASED MODE-LOCKED LASERS.
- Creator
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Mnaridis, Dimitrios, Delfyett, Peter, University of Central Florida
- Abstract / Description
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The topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analog-to-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the...
Show moreThe topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analog-to-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the performance of previously demonstrated chirped pulse laser sources. Moreover, the focus is shifted to a specific application of the linearly chirped pulses, time-stretched photonic analog-to-digital conversion (TS ADC). The challenges of surpassing the speeds of current electronic converters are discussed, while the need for low noise linearly chirped pulse lasers becomes apparent for the realization of TS ADC. The experimental research addresses the topic of low noise chirped pulse generation in three distinct ways. First, a chirped pulse (Theta) laser with an intra-cavity Fabry-Perot etalon and a long-term referencing mechanism is developed that results in the reduction of the pulse-to-pulse energy noise. Noise suppression of >15 times is demonstrated. Moreover, an optical frequency comb with spacing equal to the repetition rate (H100 MHz) is generated using the etalon, resulting in the first reported demonstration of a system operating in the sub-GHz regime based on semiconductor gain. The path for the development of the Theta laser was laid by the precise characterization of the etalon used in this laser cavity design. A narrow linewidth laser is used in conjunction with an acousto-optic modulator externally swept for measuring the etalon's free spectral range with a sub-Hz precision, or 10 parts per billion. Furthermore, the measurement of the etalon long-term drift and birefringence lead to the development of a modified intra-cavity Hansch-Couillaud locking mechanism for the Theta laser. Moreover, an external feed-forward system was demonstrated that aimed at increasing the temporal/spectral uniformity of the optical pulses. A complete characterization of the system is demonstrated. On a different series of experiments, the pulses emitted by an ultra-low noise but high repetition rate mode-locked laser were demultiplexed resulting in a low repetition rate pulse train. Experimental investigation of the noise properties of the laser proved that they are preserved during the demultiplexing process. The noise of the electrical gate used in this experiment is also investigated which led into the development of a more profound understanding of the electrical noise of periodical pulses and a mechanism of measuring their noise. The appendices in this dissertation provide additional material used for the realization of the main research focus of the dissertation. Measurements of the group delay of the etalon used in the Theta laser are presented in order to demonstrate the limiting factors for the development of this cavity design. The description of a balancing routine is presented, that was used for expanding the dynamic range of intra-cavity active variable delay. At last, the appendix presents the calculations regarding the contribution of various parameters in the limitations of analog-to-digital conversion.
Show less - Date Issued
- 2011
- Identifier
- CFE0003874, ucf:48741
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0003874
- Title
- Semiconductor Design and Manufacturing Interplay to Achieve Higher Yields at Reduced Costs using SMART Techniques.
- Creator
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Oberai, Ankush Bharati, Yuan, Jiann-Shiun, Abdolvand, Reza, Georgiopoulos, Michael, Sundaram, Kalpathy, Reilly, Charles, University of Central Florida
- Abstract / Description
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Since the outset of IC Semiconductor market there has been a gap between its design and manufacturing communities. This gap continued to grow as the device geometries started to shrink and the manufacturing processes and tools got more complex. This gap lowered the manufacturing yield, leading to higher cost of ICs and delay in their time to market. It also impacted performance of the ICs, impacting the overall functionality of the systems they were integrated in. However, in the recent years...
Show moreSince the outset of IC Semiconductor market there has been a gap between its design and manufacturing communities. This gap continued to grow as the device geometries started to shrink and the manufacturing processes and tools got more complex. This gap lowered the manufacturing yield, leading to higher cost of ICs and delay in their time to market. It also impacted performance of the ICs, impacting the overall functionality of the systems they were integrated in. However, in the recent years there have been major efforts to bridge the gap between design and manufacturing using software solutions by providing closer collaborations techniques between design and manufacturing communities. The root cause of this gap is inherited by the difference in the knowledge and skills required by the two communities. The IC design community is more microelectronics, electrical engineering and software driven whereas the IC manufacturing community is more driven by material science, mechanical engineering, physics and robotics. The cross training between the two is almost nonexistence and not even mandated. This gap is deemed to widen, with demand for more complex designs and miniaturization of electronic appliance-products. Growing need for MEMS, 3-D NANDS and IOTs are other drivers that could widen the gap between design and manufacturing. To bridge this gap, it is critical to have close loop solutions between design and manufacturing This could be achieved by SMART automation on both sides by using Artificial Intelligence, Machine Learning and Big Data algorithms. Lack of automation and predictive capabilities have even made the situation worse on the yield and total turnaround times. With the growing fabless and foundry business model, bridging the gap has become even more critical. Smart Manufacturing philosophy must be adapted to make this bridge possible. We need to understand the Fab-fabless collaboration requirements and the mechanism to bring design to the manufacturing floor for yield improvement. Additionally, design community must be educated with manufacturing process and tool knowledge, so they can design for improved manufacturability. This study will require understanding of elements impacting manufacturing on both ends of the design and manufacturing process. Additionally, we need to understand the process rules that need to be followed closely in the design phase. Best suited SMART automation techniques to bridge the gap need to be studied and analyzed for their effectiveness.
Show less - Date Issued
- 2018
- Identifier
- CFE0007351, ucf:52096
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0007351
- Title
- A laser radar employing linearly chirped pulses from a mode-locked laser for long range, unambiguous, sub-millimeter resolution ranging and velocimetry.
- Creator
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Piracha, Mohammad Umar, ,, University of Central Florida
- Abstract / Description
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Light detection and ranging (lidar) is used for various applications such as remote sensing, altimetry and imaging. In this talk, a linearly chirped pulse source is introduced that generates wavelength-swept pulses exhibiting ~6 nm optical bandwidth with (>) 20 km coherence length. The chirped pulses are used in an interferometric lidar setup to perform distance measurements with sub-millimeter resolution (using pulses that are a few meters long), at target distances (>) 10 km, with at least...
Show moreLight detection and ranging (lidar) is used for various applications such as remote sensing, altimetry and imaging. In this talk, a linearly chirped pulse source is introduced that generates wavelength-swept pulses exhibiting ~6 nm optical bandwidth with (>) 20 km coherence length. The chirped pulses are used in an interferometric lidar setup to perform distance measurements with sub-millimeter resolution (using pulses that are a few meters long), at target distances (>) 10 km, with at least 25 dB signal-to-noise ratio at the receiver. A pulse repetition rate of 20 MHz provides fast update rates, while chirped pulse amplification allows easy amplification of optical signals to high power levels that are required for long range operation. A pulse tagging scheme based on phase modulation is used to demonstrate unambiguous, long range measurements. In addition to this, simultaneous measurement of target range and Doppler velocity is performed using a target moving at a speed of over 330 km/h (205 mph) inside the laboratory. In addition to this, spectral phase modulation of the chirped pulses is demonstrated to compensate for the undesirable ripple in the group delay of the chirped pulses. Moreover, spectral amplitude modulation is used to generate pulses with Gaussian temporal intensity profiles and a two-fold increase in the lidar range resolution (284 um) is observed.
Show less - Date Issued
- 2012
- Identifier
- CFE0004423, ucf:49409
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0004423
- Title
- Precision Metrology of Laser Plasmas in the XUV Band.
- Creator
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Szilagyi, John, Richardson, Martin, Sundaram, Kalpathy, Abdolvand, Reza, Baudelet, Matthieu, Shivamoggi, Bhimsen, University of Central Florida
- Abstract / Description
-
The XUV band, a region of light spanning the wavelength range of 5 - 200 nm, is located between the Ultraviolet and X-ray regions of the electromagnetic spectrum. It is further divided into a 100 - 200 nm region called the Vacuum Ultraviolet (VUV), and a 5 (-) 100 nm region called the Extreme Ultraviolet (EUV). Applications of this light have been slow to develop due to the lack of suitable sources, efficient optics, and sensitive detectors. Recently, many industries such as the semiconductor...
Show moreThe XUV band, a region of light spanning the wavelength range of 5 - 200 nm, is located between the Ultraviolet and X-ray regions of the electromagnetic spectrum. It is further divided into a 100 - 200 nm region called the Vacuum Ultraviolet (VUV), and a 5 (-) 100 nm region called the Extreme Ultraviolet (EUV). Applications of this light have been slow to develop due to the lack of suitable sources, efficient optics, and sensitive detectors. Recently, many industries such as the semiconductor manufacturing industry, medical surgery, micromachining, microscopy, and spectroscopy have begun to benefit from the short wavelengths and the high photon energies of this light. At present, the semiconductor chip industry is the primary reason for the investment in, and development of, XUV sources, optics, and detectors. The demand for high power EUV light sources at 13.5 nm wavelength is driven by the development of the next generation of semiconductor lithography tools. The development of these tools enables the continued reduction in size, and the increase in transistor density of semiconductor devices on a single chip. Further development and investigation of laser produced plasma EUV light sources is necessary to increase the average optical power and reliability. This will lead to an increase in the speed of EUV lithographic processes, which are necessary for future generations of advanced chip design, and high volume semiconductor manufacturing. Micromachining, lithography, and microscopy benefit from improvements in resolution due to the shorter wavelengths of light in the VUV band. In order to provide adequate illumination for these applications, sources are required which are brighter and have higher average power. Laser produced plasma (LPP) VUV light sources are used extensively for lithography and defect detection in semiconductor manufacturing. Reductions in the wavelength and increases in the average power will increase the rate and yield of chip manufacture, as well as reduce the costs of semiconductor manufacture.The work presented in this thesis, describes the development of two laser plasma source facilities in the Laser Plasma Laboratory at UCF, which were designed to investigate EUV and VUV laser plasma sources. The HP-EUV-Facility was developed to optimize and demonstrate a high power 13.5 nm EUV LPP source. This facility provides high resolution spectroscopy across 10.5 - 20 nm, and absolute energy measurement of 13.5 nm +/- 2% in 2? sr. The VUV-MS-Facility was developed to investigate VUV emission characteristics of laser plasmas of various target geometries and chemistries. This facility provides absolute calibrated emission spectra for the 124 - 250 nm wavelength range, in addition to, at wavelength plasma imaging. Calibrated emission spectra, in-band power, and conversion efficiency are presented in this work for gas targets of Argon, Krypton, and Xenon and solid targets of Silicon, Copper, Molybdenum, Indium, Tantalum, Tin, and Zinc, across the laser intensity range of 8.0x10^6 (-) 3.2x10^12 W/cm2.
Show less - Date Issued
- 2017
- Identifier
- CFE0006805, ucf:51793
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006805
