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Title: HEAT TRANSFER IN MULTI-LAYER ENERGETIC NANOFILM ON COMPOSITES SUBSTRATE.
Creator: amini manesh, navid, Kumar , Ranganathan, University of Central Florida
Abstract / Description: The main purpose of this work is the physical understanding and the numerical description of the reaction of the dense metastable intermolecular composition (MIC). Energy density of MIC is much higher than conventional energetic material; therefore, MIC finds more applications in the propellant and explosive system. The physical model includes the speed of propagation and rate of reaction, and the relationship between the layer thickness, heat rate, and length of the flame based on physical...
Show moreThe main purpose of this work is the physical understanding and the numerical description of the reaction of the dense metastable intermolecular composition (MIC). Energy density of MIC is much higher than conventional energetic material; therefore, MIC finds more applications in the propellant and explosive system. The physical model includes the speed of propagation and rate of reaction, and the relationship between the layer thickness, heat rate, and length of the flame based on physical model. In Part I of this thesis, a one-dimensional model based on Weihs was developed for 20 pairs of a multi-layer of aluminum and copper oxide. This problem was solved using an assumed value of constant atomic diffusion in Arrhenius' equation to obtain the velocity of self- propagation. Using the maximum and minimum measured velocities in a similar configuration, the activation energy was computed and was found to be significantly different. When the velocity was used to obtain a linear temperature profile, the margin of error was significant as well. Therefore, this method was seen to have severe shortcomings. In Part II of this thesis, adiabatic unit cell of one layer of aluminum and copper oxide in an ideal reaction was considered. Temperature profile based on chemical heat generation and phase transformation of reactants has been calculated. This model confirmed the highest possible temperature during reaction of 2920 C ± 5% obtained in the literature, however, the model was unable to provide other important flame characteristics. In Part III, a two-dimensional model was developed introducing the flame at the interface. A black box theory has been used to simplify some of the characteristics of the flame, ignoring diffusion characteristics. Using this model, the length of flame was calculated using the measured value of the speed of propagation of the flame. Measuring some of the characteristics of the flame was the main goal of Part III of this thesis. Controllable environment was created for the multilayer thin film of aluminum and copper oxide to eliminate the number of effective variables that affect the speed of propagation. Transformable heat of reaction was used to control the speed of propagation. In addition, a MIC sample was designed and fabricated to measure the speed of propagation with an accuracy of 0.1 m/s. This measurement technique was used to measure the speed of propagation on variable substrate up to 65 m/s. The flame length was also calculated for different speeds of propagation over different substrates. The temperature distribution on the substrate was calculated numerically. Significant improvements have been made in Part III; however, this model does not provide concentration profiles. For future work, a more complete two-dimensional physical model will be developed for self-propagation reaction of multilayer thin film of aluminum and copper oxide based on thermal transport and atomic diffusion. This two-dimensional model includes the reaction rate, speed of propagation and the temperature profile. Since this model relies on a number of physical variables that are as yet unknown, further work is warranted in this area to carry out a thorough computational study.
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Date Issued: 2007
Identifier: CFE0001775, ucf:47265
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001775

Title: TUNABLE INFRARED METAMATERIALS.
Creator: Shelton, David, Boreman, Glenn, University of Central Florida
Abstract / Description: Metamaterials are engineered periodic composites that have unique refractive-index characteristics not available in natural materials. They have been demonstrated over a large portion of the electromagnetic spectrum, from visible to radiofrequency. For applications in the infrared, the structure of metamaterials is generally defined using electron-beam lithography. At these frequencies, the loss and dispersion of any metal included in the composite are of particular significance. In this...
Show moreMetamaterials are engineered periodic composites that have unique refractive-index characteristics not available in natural materials. They have been demonstrated over a large portion of the electromagnetic spectrum, from visible to radiofrequency. For applications in the infrared, the structure of metamaterials is generally defined using electron-beam lithography. At these frequencies, the loss and dispersion of any metal included in the composite are of particular significance. In this regard, we investigate deviations from the Drude model due to the anomalous skin effect. For comparison with theoretical predictions, the optical properties of several different metals are measured, both at room temperature and at 4 K. We extend this analysis to the coupling between plasmon and phonon modes in a metamaterial, demonstrating that very thin oxide layers residing at the metal-substrate interface will significantly affect the spectral location of the overall resonance. Oxide-thickness-dependent trends are then explored in some detail. Potential applications of this general area of study include surface-enhanced infrared spectroscopy for chemical sensing, and development of narrowband notch filters in the very long wavelength infrared. We then consider various possibilities for development of tunable infrared metamaterials. These would have wide applicability in dynamically variable reflectance surfaces and in beam steering. We consider several methods that have been previously shown to produce tunable metamaterials in the radio frequency band, and explore the challenges that occur when such techniques are attempted at infrared frequencies. A significant advance in tunable-infrared-metamaterial technology is then demonstrated with the use of thermochromic vanadium dioxide thin films. Highlights include the first demonstration of a tunable reflectarray in the infrared for active modulation of reflected phase, the first demonstration of a tunable resonance frequency in the thermal infrared band, and the largest resonance-frequency shift recorded to date in any part of the infrared. Finally, future work is proposed that holds the promise of wideband frequency tuning and electronically-controllable metamaterials.
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Date Issued: 2010
Identifier: CFE0003201, ucf:48575
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003201

Title: EFFECT OF SODIUM AND ABSORBER THICKNESS ON CIGS2 THIN FILM SOLAR CELLS.
Creator: Vasekar, Parag, Dhere, Neelkanth, University of Central Florida
Abstract / Description: Chalcopyrites are important contenders among solar cell technologies due to direct band gap and higher absorption coefficient. CuIn1-xGaxS2 (CIGS2) thin-film solar cells are of interest for space power applications because of near optimum bandgap of 1.5 eV for AM0 solar radiation outside the earth's atmosphere. The record efficiency of 11.99% has been achieved on a 2.7 µm CIGS2 thin film prepared by sulfurization at FSEC PV Materials Laboratory. Since CIGS2 films are typically grown...
Show moreChalcopyrites are important contenders among solar cell technologies due to direct band gap and higher absorption coefficient. CuIn1-xGaxS2 (CIGS2) thin-film solar cells are of interest for space power applications because of near optimum bandgap of 1.5 eV for AM0 solar radiation outside the earth's atmosphere. The record efficiency of 11.99% has been achieved on a 2.7 µm CIGS2 thin film prepared by sulfurization at FSEC PV Materials Laboratory. Since CIGS2 films are typically grown in copper-rich regime, excess cuprous sulfide which helps in the formation of CIGS2 is etched away. This makes CIGS2 nearly stoichiometric. However, it is difficult to adjust Cu/(In+Ga) ratio in the desired range 0.7 to 0.9. A solution to this is to grow CIGS2 in copper-deficient regime. However, it is difficult to produce device quality films without the support of cuprous sulfide. This work is one of the very few attempts in which device quality films were formed even in copper-deficient regimes with the addition of sodium. Also, recent research endeavors in the CIGS2 thin film photovoltaic community are directed towards thinner films because the availability and cost of indium as well as gallium are limiting factors. The required amounts of rare and expensive metals can be lowered by using thinner films. The solar cell performance in the thinner absorbers deteriorates due to the detrimental effects of the larger fraction of grain boundaries. It is essential to hasten the grain growth through coalescence to retain high efficiency in devices prepared using thinner films. Large grain size that is desirable for obtaining high efficiency cells can be achieved by creating conditions of fewer nucleation sites and large mobilities of the deposited species. Sodium has been found to play a vital role by enhancing the atomic mobility and improving the coalescence even in thinner films. This work presents a study of morphology and device properties of CIGS2 thin films with Copper-deficient absorbers after minute amounts of sodium are introduced on the Mo-coated substrate in the form of sodium fluoride layer prior to sputter deposition of copper-gallium alloy and indium. Photovoltaic conversion efficiency of 9.15% was obtained for copper-deficient absorbers. In a parallel set of experiments, copper-rich precursors were used to produce absorbers of lower thickness range values and the parameters were optimized. Photovoltaic conversion efficiency of 10.12% was obtained for an absorber of thickness 1.5 µm and an efficiency of 9.62% was obtained for an absorber of thickness 1.2 µm.
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Date Issued: 2009
Identifier: CFE0002525, ucf:47671
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002525

Title: Freestanding Holey Thin Films for Renewable Energy Storage.
Creator: Marcus, Kyle, Yang, Yang, Zhai, Lei, Dong, Yajie, University of Central Florida
Abstract / Description: The rapid advancement of portable and wearable technologies has challenged research to improve upon current renewable battery energy storage systems. By using nanotechnology, it is now possible to access more of the energy storage theoretical values that have been unattainable thus far. We have developed a method to create freestanding holey thin films through combinations of electrochemical and chemical vapor deposition (CVD) techniques to be used in renewable energy storage systems....
Show moreThe rapid advancement of portable and wearable technologies has challenged research to improve upon current renewable battery energy storage systems. By using nanotechnology, it is now possible to access more of the energy storage theoretical values that have been unattainable thus far. We have developed a method to create freestanding holey thin films through combinations of electrochemical and chemical vapor deposition (CVD) techniques to be used in renewable energy storage systems. Freestanding thin films promote excellent contact between the residual conductive framework and any functionalized active component specific to the designed material. Without requiring any other additives, the as-prepared freestanding thin films can be mechanically and chemically tuned to allow for use in a wide range of applications. Incorporation of micro- and nano-sized holey structures dramatically enhances the electrochemically active surface area, which is essential for facilitating appropriate reactions in conversion type energy storage systems. Combining the freestanding and holey components with an active layer effectively enhances conductivity and reduces the electron transfer distance at the electrode-electrolyte interface. Herein, two separately designed freestanding holey thin films were successfully used as cathode materials for lithium-sulfur battery (Li-S) and magnesium-ion battery (MIB) energy storage systems.
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Date Issued: 2017
Identifier: CFE0007127, ucf:52304
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007127

Title: Chemistry and(&)nbsp;Structure of Ru/SiO2(&)nbsp;and Ru/Al2O3 Interfaces.
Creator: Ezzat, Sameer, Campiglia, Andres, Coffey, Kevin, Zou, Shengli, Frazer, Andrew, Harper, James, Coffey, Kevin, University of Central Florida
Abstract / Description: The resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The...
Show moreThe resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The changes in the chemistry and structure of the dielectric interface induced by the anneals, as determined by x-ray reflectivity and x-ray photoelectron spectroscopy measurements, are related to the changes in the specularity of the surface for electron scattering in the context of the Fuchs-Sondheimer semi-classical model of the resistivity size effect.
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Date Issued: 2019
Identifier: CFE0007454, ucf:52727
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007454

Title: OPTIMIZATION OF PROCESS PARAMETERS FOR REDUCED THICKNESS CIGSES THIN FILM SOLAR CELLS.
Creator: Pethe, Shirish, Dhere, Neelkanth, University of Central Florida
Abstract / Description: With the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All...
Show moreWith the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All research activities are focused on developing various technologies that are capable of converting sunlight into electricity with high efficiency and can be produced using a cost-effective process. One of such technologies is the CuIn1-xGaxSe2 (CIGS) and its alloys that can be produced using cost-effective techniques and also exhibit high photo-conversion efficiency. The work presented here discusses some of the fundamental issues related to high volume production of CIGS thin film solar cells. Three principal issues that have been addressed in this work are effect of reduction in absorber thickness on device performance, micrononuniformity involved with amount of sodium and its effect on device performance and lastly the effect of working distance on the properties of molybdenum back contact. An effort has been made to understand the effect of absorber thickness on PV parameters and optimize the process parameters accordingly. Very thin (<1 µm) absorber film were prepared by selenization using metallorganic selenium source in a conventional furnace and by RTP using Se vapor. Sulfurization was carried out using H2S gas. Devices with efficiencies reaching 9% were prepared for very thin (<1 µm) CIGS and CIGSeS thin films. It was shown through this work that the absorber thickness reduction of 64% results in the efficiency drop of only 32%. With further optimization of the reaction process of the absorber layer as well as the other layers higher efficiencies can be achieved. The effect of sodium on the device performance is experimentally verified in this work. To the best of our knowledge the detrimental effect of excess sodium has been verified by experimental data and effort has been made to correlate the variation in PV parameter to theoretical models of effect of sodium. It has been a regular practice to deposit thin barrier layer prior to molybdenum deposition to reduce the micrononuniformities caused due to nonuniform out diffusion of sodium from the soda lime glass. However, it was proven in this work that an optimally thick barrier layer is necessary to reduce the out diffusion of sodium to negligible quantities and thus reduce the micrononuniformities. Molybdenum back contact deposition is a bottleneck in high volume manufacturing due to the current state of art where multi layer molybdenum film needs to be deposited to achieve the required properties. In order to understand and solve this problem experiments were carried out. The effect of working distance (distance between the target and the substrate) on film properties was studied and is presented in this work. During the course of this work efforts were taken to carry out a systematic and detailed study of some of the fundamental issues related to CIGS technology and particular for high volume manufacturing of CIGS PV modules and lay a good foundation for further improvement of PV performance of CIGS thin film solar cells prepared by the two step process of selenization and sulfurization of sputtered metallic precursors.
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Date Issued: 2010
Identifier: CFE0003517, ucf:48940
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003517

Title: Implementation of Optical Interferometry and Spectral Reflectometry for High Fidelity Thin Film Measurements.
Creator: Arends-Rodriguez, Armando, Putnam, Shawn, Chow, Louis, Kauffman, Jeffrey, University of Central Florida
Abstract / Description: An in-house reflectometer/interferometer has been built to investigate the varying curvature and thickness profiles in the contact line region of air, acetone, iso-octane, ethanol, and water on various types of substrates. Light intensity measurements were obtained using our reflectometer/interferomter and then analyzed in MATLAB to produce thickness and curvature profiles. The apparatus is based on the principle of a reflectometer, consisting of different optical elements, probe, light...
Show moreAn in-house reflectometer/interferometer has been built to investigate the varying curvature and thickness profiles in the contact line region of air, acetone, iso-octane, ethanol, and water on various types of substrates. Light intensity measurements were obtained using our reflectometer/interferomter and then analyzed in MATLAB to produce thickness and curvature profiles. The apparatus is based on the principle of a reflectometer, consisting of different optical elements, probe, light source, and spectrometer. Our reflectometer/interferomter takes measurements in the UV-Vis-IR range (200nm-1000nm). This range is achieved by using a light source that has both a deuterium light (190nm-800nm), a tungsten halogen light (400nm-1100nm), a Metal-Core Printed Circuit Board LED (800nm-1000nm) and a Metal-Core Printed Circuit board cold white LED (400nm-800nm, 6500 K). A UV-VIS-IR spectrometer reads the light response after light is focused on the region of interest. Then a CCD camera (2448x2048) records the profiles for image analyzing interferometry. The readings were then validated based on results in the literature and studies with cylindrical lens samples.
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Date Issued: 2017
Identifier: CFE0006559, ucf:51328
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006559

Title: FILM GROWTH OF NOVEL FREQUENCY AGILE COMPLEX-OXIDE PIEZOELECTRIC MATERIAL.
Creator: Sreeramakavacham, Bindu, Klemenz, Christine, University of Central Florida
Abstract / Description: Piezoelectric materials are well known for their applications in surface (SAW) and bulk acoustic wave (BAW) devices such as oscillators, resonators and sensors. Quartz has been the main material used in such applications. Ternary calcium gallium germanate (CGG) structure-type materials, so-called langasites, recently emerged as very promising because of their piezoelectric properties superior to quartz. This thesis discusses the growth of langasite-type La3Ga5.5Ta0.5O14 (LGT) films by liquid...
Show morePiezoelectric materials are well known for their applications in surface (SAW) and bulk acoustic wave (BAW) devices such as oscillators, resonators and sensors. Quartz has been the main material used in such applications. Ternary calcium gallium germanate (CGG) structure-type materials, so-called langasites, recently emerged as very promising because of their piezoelectric properties superior to quartz. This thesis discusses the growth of langasite-type La3Ga5.5Ta0.5O14 (LGT) films by liquid phase epitaxy (LPE) technique and their chemical and structural characterization. In addition, the different techniques suitable for the growth of LGT are discussed and compared. To adjust the materials properties for given applications, doping by selected ions can be used. However, the dopants must be homogeneously distributed. In the current study, Al, Ti, Cr and Ca were investigated as dopants. In an earlier study, Al and Ti had been chosen because of their ability to substitute the octahedral site of LGT, normally occupied by Ga (CN=VI) with a segregation coefficient near unity in Czochralski growth. Doping with Ca and Cr has never been reported before, and therefore, the segregation behavior was unknown. In this study, Al, Ti and co-doping with Cr and Ca has been investigated for both X and Y-oriented films. The dopant distribution in the films was quantitatively evaluated by Secondary Ion Mass Spectroscopy (SIMS), using ion-implanted LGT substrates as standards. The drop of dopant concentration, in the SIMS profile, allows for the identification of the film-substrate interface and to accurately measure the thickness of the films. The film thickness is found to be typically of the order 0.5 to 2µm, depending on growth conditions. The solvent was found a reliable choice, as solvent ions were not incorporated in the films above the detection limits of the characterization techniques. A lead oxide solvent system is used as a solvent for the growth of LGT LPE films with different orientations. Extensive structural characterization was performed. The crystallinity of substrates and films grown with different orientations was compared by X-ray diffraction (XRD). The films show a very high structural perfection, with typically FWHM values of 0.035 for the (004) reflection of the XRD rocking curve. The films were also characterized by TEM. The optical transmittance of the films was characterized by Varian optical spectrophotometer, and the value obtained of approximately 80% is comparable with the transmittance value of the Czochralski grown polished substrate.
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Date Issued: 2007
Identifier: CFE0001772, ucf:47284
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001772

Title: PREPARATION OF EFFICIENT CUIN1-XGAXSE2-YSY/CDS THIN-FILM SOLAR CELLS BY OPTIMIZING THE MOLYBDENUM BACK CONTACT AND USING DIETHYLSELENIDE AS SELENIUM PRECURSOR.
Creator: Kadam, Ankur, Dhere, Neelkanth, University of Central Florida
Abstract / Description: High efficiency CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion and chemical reactivity with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops...
Show moreHigh efficiency CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells were prepared by optimizing the Mo back contact layer and optimizing the parameters for preparing CIGSS absorber layer using diethylselenide as selenium source. The Mo film was sputter deposited on 2.5 cm x 10 cm soda-lime glass using DC magnetron sputtering for studying the adhesion and chemical reactivity with selenium and sulfur containing gas at maximum film growth temperature. Mo being a refractory material develops stresses, nature of which depends on the deposition power and argon pressure. It was found that the deposition sequence with two tensile stressed layers deposited at 200W and 5 x 10-3 Torr argon pressure when sandwiched between three compressively stressed layers deposited at 300 W power and 0.3 x 10-3 Torr argon pressure had the best adhesion, limited reactivity and compact nature. An organo-metallic compound, diethylselenide (DESe) was developed as selenium precursor to prepare CIGSS absorber layers. Metallic precursors Cu-In-Ga layers were annealing in the conventional furnace in the temperature range of 475oC to 515 oC and in the presence of a dilute DESe atmosphere. The films were grown in an indium rich regime. Systematic approaches lead to the optimization of each step involved in the preparation of the absorber layer. Initial experiments were focused on obtaining the range of maximum temperatures required for the growth of the film. The following experiments included optimization of soaking time at maximum temperature, quantity of metallic precursor, and amount of sodium in terms of NaF layer thickness required for selenization. The absorber surface was coated with a 50 to 60 nm thick layer of CdS as hetero-junction partner by chemical bath deposition. A window bi-layer of i:ZnO/ZnO:Al was deposited by RF magnetron sputtering. The thickness of i:ZnO was increased to reduce the shunt resistance to improve open circuit voltage. The cells were completed by depositing a Cr/Ag front contact by thermal evaporation. Efficiencies greater than 13% was achieved on glass substrates. The performance of the cells was co-related with the material properties.
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Date Issued: 2006
Identifier: CFE0001035, ucf:46822
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001035

Title: METAL BLACKS AS SCATTERING CENTERS TO INCREASE THE EFFICIENCY OF THIN FILM SOLAR CELLS.
Creator: Panjwani, Deep, Peale, Robert, University of Central Florida
Abstract / Description: Metal nano particles are investigated as scattering centers on front surface of thin-film solar cells to improve efficiency. The principle is that scattering, which is enhanced near the plasmon resonance frequency of the particle and depends on particle size, increases the effective optical path length of incident light, leading to more light absorption in active layer of thin film solar cell. The particular types of particles investigated here are known as "metal-black", well known as an IR...
Show moreMetal nano particles are investigated as scattering centers on front surface of thin-film solar cells to improve efficiency. The principle is that scattering, which is enhanced near the plasmon resonance frequency of the particle and depends on particle size, increases the effective optical path length of incident light, leading to more light absorption in active layer of thin film solar cell. The particular types of particles investigated here are known as "metal-black", well known as an IR absorber for bolometric infrared detectors. Gold-black was deposited on commercial thin-film solar cells using a thermal evaporator in a nitrogen ambient at pressures of ~1 Torr. We suggest that the broad range of length scales for gold black particles, as quantified by scanning electron microscopy, gives rise to efficient scattering over a broad range of wavelengths across the solar spectrum. The solar cell efficiency was determined both as a function of wavelength and for a solar spectrum produced by a Xe lamp and appropriate filters. Up to 20% increase in short-circuit photocurrent, and a 7% increase in efficiency at the maximum power point, were observed.
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Date Issued: 2011
Identifier: CFE0004047, ucf:49153
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004047

Title: FUNDAMENTAL STUDY OF FC-72 POOL BOILING SURFACE TEMPERATURE FLUCTUATIONS AND BUBBLE BEHAVIOR.
Creator: Griffin, Alison, Chow, Louis, University of Central Florida
Abstract / Description: A heater designed to monitor surface temperature fluctuations during pool boiling experiments while the bubbles were simultaneously being observed has been fabricated and tested. The heat source was a transparent indium tin oxide (ITO) layer commercially deposited on a fused quartz substrate. Four copper-nickel thin film thermocouples (TFTCs) on the heater surface measured the surface temperature, while a thin layer of sapphire or fused silica provided electrical insulation between the TFTCs...
Show moreA heater designed to monitor surface temperature fluctuations during pool boiling experiments while the bubbles were simultaneously being observed has been fabricated and tested. The heat source was a transparent indium tin oxide (ITO) layer commercially deposited on a fused quartz substrate. Four copper-nickel thin film thermocouples (TFTCs) on the heater surface measured the surface temperature, while a thin layer of sapphire or fused silica provided electrical insulation between the TFTCs and the ITO. The TFTCs were micro-fabricated using the liftoff process to deposit the nickel and copper metal films. The TFTC elements were 50 microns wide and overlapped to form a 25 micron by 25 micron junction. TFTC voltages were recorded by a DAQ at a sampling rate of 50 kHz. A high-speed CCD camera recorded bubble images from below the heater at 2000 frames/second. A trigger sent to the camera by the DAQ synchronized the bubble images and the surface temperature data. As the bubbles and their contact rings grew over the TFTC junction, correlations between bubble behavior and surface temperature changes were demonstrated. On the heaters with fused silica insulation layers, 1-2 C temperature drops on the order of 1 ms occurred as the contact ring moved over the TFTC junction during bubble growth and as the contact ring moved back over the TFTC junction during bubble departure. These temperature drops during bubble growth and departure were due to microlayer evaporation and liquid rewetting the heated surface, respectively. Microlayer evaporation was not distinguished as the primary method of heat removal from the surface. Heaters with sapphire insulation layers did not display the measurable temperature drops observed with the fused silica heaters. The large thermal diffusivity of the sapphire compared to the fused silica was determined as the reason for the absence of these temperature drops. These findings were confirmed by a comparison of temperature drops in a 2-D simulation of a bubble growing over the TFTC junction on both the sapphire and fused silica heater surfaces. When the fused silica heater produced a temperature drop of 1.4 C, the sapphire heater produced a drop of only 0.04 C under the same conditions. These results verified that the lack of temperature drops present in the sapphire data was due to the thermal properties of the sapphire layer. By observing the bubble departure frequency and site density on the heater, as well as the bubble departure diameter, the contribution of nucleate boiling to the overall heat removal from the surface could be calculated. These results showed that bubble vapor generation contributed to approximately 10% at 1 W/cm^2, 23% at 1.75 W/cm^2, and 35% at 2.9 W/cm^2 of the heat removed from a fused silica heater. Bubble growth and contact ring growth were observed and measured from images obtained with the high-speed camera. Bubble data recorded on a fused silica heater at 3 W/cm^2, 4 W/cm^2, and 5 W/cm^2 showed that bubble departure diameter and lifetime were negligibly affected by the increase in heat flux. Bubble and contact ring growth rates demonstrated significant differences when compared on the fused silica and sapphire heaters at 3 W/cm^2. The bubble departure diameters were smaller, the bubble lifetimes were longer, and the bubble departure frequency was larger on the sapphire heater, while microlayer evaporation was faster on the fused silica heater. Additional considerations revealed that these differences may be due to surface conditions as well as differing thermal properties. Nucleate boiling curves were recorded on the fused silica and sapphire heaters by adjusting the heat flux input and monitoring the local surface temperature with the TFTCs. The resulting curves showed a temperature drop at the onset of nucleate boiling due to the increase in heat transfer coefficient associated with bubble nucleation. One of the TFTC locations on the sapphire heater frequently experienced a second temperature drop at a higher heat flux. When the heat flux was started from 1 W/cm^2 instead of zero or returned to zero only momentarily, the temperature overshoot did not occur. In these cases sufficient vapor remained in the cavities to initiate boiling at a lower superheat.
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Date Issued: 2008
Identifier: CFE0002167, ucf:47502
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002167

Title: Optimization of Process Parameters for Faster Deposition of CuIn1-xGaxS2 and CuIn1-xGaxSe2-ySy Thin Film Solar Cells.
Creator: Kaul, Ashwani, Dhere, Neelkanth, Heinrich, Helge, Kar, Aravinda, Chow, Lee, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area...
Show moreThin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area deposition, reduction in the materials consumption of active layers, and attaining faster deposition rates suitable for in-line processing. Selenization-sulfurization of sputtered metallic Cu-In-Ga precursors is known to be more amenable to large area deposition. Sputter-deposited molybdenum thin film is commonly employed as a back contact layer for CIGS solar cells. However, there are several difficulties in fabricating an optimum back contact layer. It is known that molybdenum thin films deposited at higher sputtering power and lower gas pressure exhibit better electrical conductivity. However, such films exhibit poor adhesion to the soda-lime glass substrate. On the other hand, films deposited at lower discharge power and higher pressure although exhibit excellent adhesion show lower electrical conductivity. Therefore, a multilayer structure is normally used so as to get best from the two deposition regimes. A multi-pass processing is not desirable in high volume production because it prolongs total production time and correspondingly increases the manufacturing cost. In order to make manufacturing compliant with an in-line deposition, it is justifiable having fewer deposition sequences. Thorough analysis of pressure and power relationship of film properties deposited at various parameters has been carried out. It has been shown that it is possible to achieve a molybdenum back contact of desired properties in a single deposition pass by choosing the optimum deposition parameters. It is also shown that the film deposited in a single pass is actually a composite structure. CIGS solar cells have successfully been completed on the developed single layer back contact with National Renewable Energy Laboratory (NREL) certified device efficiencies (>)11%. The optimization of parameters has been carried out in such a way that the deposition of back contact and metallic precursors can be carried out in identical pressure conditions which is essential for in-line deposition without a need for load-lock. It is know that the presence of sodium plays a very critical role during the growth of CIGS absorber layer and is beneficial for the optimum device performance. The effect of sodium location during the growth of the absorber layer has been studied so as to optimize its quantity and location in order to get devices with improved performance. NREL certified devices with efficiencies (>)12% have been successfully completed.
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Date Issued: 2012
Identifier: CFE0004559, ucf:49261
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004559

Title: CORRELATION BETWEEN PREPARATION PARAMETERS AND PROPERTIES OF MOLYBDENUM BACK CONTACT LAYER FOR CIGS THIN FILM SOLAR CELLS.
Creator: Takahashi, Eigo, Dhere, Neelkanth, University of Central Florida
Abstract / Description: Molybdenum (Mo) thin film back contact layers for thin film CuIn(1-x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo...
Show moreMolybdenum (Mo) thin film back contact layers for thin film CuIn(1-x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo thin film back contact layer must satisfy. Experiments were carried out under various combinations of sputtering power and working gas pressure, for it is well known that mechanical, morphological, optical, and electrical property of a sputter-deposited Mo thin film are dependent on these process parameters. Various properties of each Mo film were measured and discussed. Sheet resistances were measured using a four-point probe equipment and minimum value of 0.25 Ω/sq was obtained for the 0.6 Ã‚Âµm-thick Mo film. Average surface roughnesses of each Mo film ranged from 15 to 26 ÃƒÂ… were measured by Dektak profilometer which was also employed to measure film thicknesses. Resistivities were calculated from the sheet resistance and film thickness of each film. Minimum resistivity of 11.9 Ã‚ÂµΩ∙cm was obtained with the Mo thin film deposited at 0.1 mTorr and 250 W. A residual stress analysis was conducted with a bending beam technique with very thin glass strips, and maximum tensile stress of 358 MPa was obtained; however, films did not exhibit a compressive stress. Adhesive strengths were examined for all films with a Ã‚Â"Scotch-tapeÃ‚Â" test, and all films showed a good adhesion to the glass substrate. Sputter-deposited Mo thin films are commonly employed as a back contact layer for CIGS and CuInSe2 (CIS)-based solar cells; however, there are several difficulties in fabricating a qualified back contact layer. Generally, Mo thin films deposited at higher sputtering power and lower working gas pressure tend to exhibit lower resistivity; however, such films have a poor adhesion to the glass substrate. On the other hand, films deposited at lower power and higher gas pressure tend to have a higher resistivity, whereas the films exhibit an excellent adhesion to the glass substrate. Therefore, it has been a practice to employ multi-layered Mo thin film back contact layers to achieve the properties of good adhesion to the glass substrate and low resistivity simultaneously. However, multi layer processes have a lower throughput and higher fabricating cost, and requires more elaborated equipment compared to single layer processes, which are not desirable from the industrial point of view. As can be seen, above mentioned process parameters and the corresponding Mo thin film properties are at the two extreme ends of the spectrum. Hence experiments were conducted to find out the mechanisms which influence the properties of Mo thin films by changing the two process parameters of working gas pressure and sputtering power individually. The relationships between process parameters and above mentioned properties were studied and explained. It was found that by selecting the process parameters properly, less resistive, appropriate-surfaced, and highly adhesive single layer Mo thin films for CIGS solar cells can be achieved.
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Date Issued: 2010
Identifier: CFE0003031, ucf:48353
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003031

Title: STUDY OF THE EFFECTS OF SODIUM AND ABSORBER MICROSTRUCTURE FOR THE DEVELOPMENT OF CUIN1-XGAXSE2-YSY THIN FILM SOLAR CELL USING AN ALTERNATIVE SELENIUM PRECURSOR.
Creator: HADAGALI, VINAYKUMAR, DHERE, NEELKANTH, University of Central Florida
Abstract / Description: Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. CuInGaSe2 thin film solar cells have achieved the highest efficiency among all the thin film technologies. A steady progress has been made in the research and development of CuInSe2 based thin film solar cells. However, there are many issues that need to be addressed for the development of CuInSe2 based thin films solar cells. High price of PV modules has been a biggest...
Show moreThin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. CuInGaSe2 thin film solar cells have achieved the highest efficiency among all the thin film technologies. A steady progress has been made in the research and development of CuInSe2 based thin film solar cells. However, there are many issues that need to be addressed for the development of CuInSe2 based thin films solar cells. High price of PV modules has been a biggest factor impeding the growth of photovoltaic modules for terrestrial application. This thesis tries to address the effects of sodium on the CIGSe and CIGSeS thin film absorbers. A progressive increase in the grain size and the degree of preferred orientation for (112) was observed with the increase in the amount of sodium available during the absorber growth. The distribution of sulfur was also influenced by the microstructure of the film. The increase in the grain size influenced the diffusion of sulfur in the CIGSeS thin film absorber. Deposition of silicon nitride alkali barrier was successfully completed. A new selenium precursor, dimethyl selenide was successfully used for the preparation of CIGSe and CIGSeS thin film solar cells. Systematic approaches lead to the optimization process parameters for the fabrication of the thin films solar cells. CIGSeS thin film solar cell with a reduced thickness of ~2 micron and an efficiency of 9.95% was prepared on sodalime glass substrate. The research presented here proves the potential of dimethyl selenide as selenium precursor to prepare device quality CIGSe absorber. The process can be further optimized to prepare highly efficient absorbers. Electron backscattered diffraction technique was used for first time to analyze the CIGSeS thin film absorbers. Kikuchi patterns and EBSD maps were obtained on the polished CIGSeS thin film absorbers. Grains with various orientations in the EBSD maps were clearly observed. However, it can also be observed that some pixels have not been indexed by the software. This might be due to the departure of crystalline structure of the film from CuInSe2 or the presence of amorphous phases. Data files for indexing and grain orientation of CIGSeS does not exist. However, with the help of lattice parameters and the position of atoms in the base the data file can be created for CIGSeS material.
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Date Issued: 2009
Identifier: CFE0002647, ucf:48192
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0002647

Title: Experiments in Graphene and Plasmonics.
Creator: Smith, Christian, Ishigami, Masa, Peale, Robert, Mucciolo, Eduardo, Chanda, Debashis, University of Central Florida
Abstract / Description: Graphene nanoribbons, graphene based optical sensors, and grating based plasmonics are explored experimentally. Graphene nanoribbons exhibit highly insulating states that may allow for graphene based digital applications. We investigate the sensitivity of these states to local charged impurities in ultra high vacuum. We look into the possibility of isolating two-dimensional films of H-BN and BSCCO, and test for any interesting phenomena. We also assess graphene's applicability for optical...
Show moreGraphene nanoribbons, graphene based optical sensors, and grating based plasmonics are explored experimentally. Graphene nanoribbons exhibit highly insulating states that may allow for graphene based digital applications. We investigate the sensitivity of these states to local charged impurities in ultra high vacuum. We look into the possibility of isolating two-dimensional films of H-BN and BSCCO, and test for any interesting phenomena. We also assess graphene's applicability for optical sensing by implementing a new style of spectral detector. Utilizing surface plasmon excitations nearby a graphene field-effect transistor we are able to produce a detector with wavelength sensitivity and selectivity in the visible range. Finally, we study another plasmonic phenomenon, and observe the resonant enhancement of diffraction into a symmetry-prohibited order in silver gratings.
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Date Issued: 2014
Identifier: CFE0005887, ucf:50874
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005887

Title: The Impact of Growth Conditions on Cubic ZnMgO Ultraviolet Sensors.
Creator: Boutwell, Ryan, Schoenfeld, Winston, Likamwa, Patrick, Kik, Pieter, Chernyak, Leonid, University of Central Florida
Abstract / Description: Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated....
Show moreCubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into the plasma. Material review includes the effect of changing conditions on the film's optical transmission, surface morphology, growth rate, crystalline phase, and stoichiometric composition. Oxygen plasma composition was investigated by spectroscopic analysis under varying oxygen flow rate and applied RF power and is correlated to device performance. Ni/Mg/Au interdigitated metal-semiconductor-metal detectors were formed to explore spectral responsivity and UV-Visible rejection ratio (RR). Zn1-xMgxO films ranged in Mg composition from x = 0.45 - 1.0. Generally, x increased with increasing substrate temperature and Mg source flux, and decreased with increasing oxygen flow rate and RF power. Increasing x was correlated with decreased peak responsivity intensity and increased RR. Device performance was improved by increasing the ratio of O to O+ atoms and minimizing O2+ in the plasma. Peak responsivity as high as 500 A/W was observed in visible-blind phase-segregated Zn1-xMgxO devices, while cubic phase solar-blind devices demonstrated peak responsivity as high as 12.6 mA/W, and RR of three orders of magnitude. Optimal conditions are predicted for the formation of DUV Zn1-xMgxO sensors.
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Date Issued: 2013
Identifier: CFE0005087, ucf:50735
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005087

Title: NANOCLUSTER THIN-FILMS FOR SENSOR APPLICATIONS.
Creator: Serritella, Joseph, Malocha, Donald, University of Central Florida
Abstract / Description: The ability to sense gas such as methane can provide an early warning system to protect human lives. High demand for the ability to sense the world around us has provided an extensive area of research for sensor technology. In particular, current sensor technology, specifically for methane, has provided sensors that require a heated environment to function. The majority of current methane sensors function at temperatures between 150[degrees]C and 450[degrees]C . This thesis will explore an...
Show moreThe ability to sense gas such as methane can provide an early warning system to protect human lives. High demand for the ability to sense the world around us has provided an extensive area of research for sensor technology. In particular, current sensor technology, specifically for methane, has provided sensors that require a heated environment to function. The majority of current methane sensors function at temperatures between 150[degrees]C and 450[degrees]C . This thesis will explore an approach to produce a room temperature methane sensor. This research will investigate techniques to create a sensor that is responsive to methane at 23[degrees]C. The approach will use the integration of a very thin film, which changes its resistive properties when methane gas is applied, deposited atop the surface of a piezoelectric substrate. An aluminum thin film interdigital transducer will launch a surface acoustic wave (SAW) that travels under the sensor's gas-sensitive resistive thin film. The SAW/resistive film interaction changes the SAW amplitude, phase and delay. For this work, three films, tin dioxide (SnO2), zinc oxide (ZnO) and palladium (Pd) [1, 2] will be studied. Gas detection will be shown when combining ZnO and Pd, and, observable change in SAW propagation loss is measured when methane gas is present at the film.
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Date Issued: 2015
Identifier: CFH0004832, ucf:45481
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFH0004832

Title: GIANT MAGNETO-IMPEDANCE EFFECT IN THIN FILM LAYERED STRUCTURES.
Creator: Borge, Amruta, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: Recently, the giant magneto impedance (GMI) effect has been studied extensively because of its potential applications in sensor elements. The focus of this thesis work is to explore different compositions and processing conditions for CoSiB and NiFe thin films to obtain the soft magnetic properties and to evaluate their potential use in GMI sensor applications. Prior to this study, an MH Looper was constructed, which was extremely important and provided the basic magnetic characterization of...
Show moreRecently, the giant magneto impedance (GMI) effect has been studied extensively because of its potential applications in sensor elements. The focus of this thesis work is to explore different compositions and processing conditions for CoSiB and NiFe thin films to obtain the soft magnetic properties and to evaluate their potential use in GMI sensor applications. Prior to this study, an MH Looper was constructed, which was extremely important and provided the basic magnetic characterization of the many ferromagnetic thin films deposited during this work. The CoSiB films were co-sputter deposited in an ultra high vacuum chamber. Films with different relative compositions of Co, Si and B were deposited by varying respective target powers. Different substrate bias conditions were also studied. Also, NiFe films were studied by varying relative composition by variation of target powers and also by variation deposition pressure. The effect of annealing was also studied. The magnetic and electrical characterization of these films was done using the MH Looper, Quad-pro four-point probe resistivity measurement, and Low Frequency Impedance analyzer HP4192A. Finally, CoSiB films with soft magnetic properties were obtained with optimized set of deposition parameters. A sample for GMI measurement was prepared, consisting of a multilayer thin film structure: CoSiB 200nm/ Cu 400nm / CoSiB 200nm. A serpentine pattern was generated on this film by photolithography technique. After obtaining the pattern, GMI studies were performed using LF impedance analyzer. This instrument was capable of providing the drive frequency in the range of 5Hz to 13MHz, but the impedance mis-match of the test fixture limited useful measurements to 9MHz. The highest GMI ratio observed was 6.2% at a 21 Oe longitudinal magnetic bias field at an 8MHz drive frequency. Transverse permeability measurements were performed by the use of two magnetic field axes of the MH Looper. The permeability behavior of the device reflects the impedance behavior with the external field. Permeability measurements were also performed on NiFe GMI Device with NiFe 600nm/ Cu 1200nm / NiFe 600nm sandwich structure. This sample was not successfully patterned and hence the impedance measurements could not be performed. Correlation of the magnetic properties of the structures was studied with the impedance responses.
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Date Issued: 2005
Identifier: CFE0000454, ucf:46394
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000454

Title: EFFECT OF ANNEALING ON COPPER THIN FILMS:THE CLASSICAL SIZE EFFECT AND AGGLOMERATION.
Creator: Gadkari, Parag, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: With continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising...
Show moreWith continued shrinking of CMOS technology to reduce the gate delay times, an increase in the resistivity of the metal corresponding to the wire dimension is a concern. This phenomenon of increase in resistivity with decreasing dimension of the thin metallic film or interconnect is known as the "classical size effect". Various theories have been postulated to explain the phenomenon of classical size effect; these theories can be broadly classified as resistivity due to scattering arising from surface and grain boundaries. The total resistivity of metals depends on the electron scattering due to impurities, phonons, surfaces, grain boundaries, and other crystal defects. Managing the size effect in a practical and manufacturing way is of major concern to the microelectronics industry. Since each of the processes (phonon, surface and grain boundary scattering) adds to the resistivity and are interrelated, it further complicates managing the size effect. However, these effects have been separately studied. In this work, the effect of annealing on the classical size effect in Cu thin films deposited on SiO2 substrate is investigated. Polycrystalline Cu thin films having thicknesses in the range of 10nm to 200nm were ultra high vacuum sputter deposited on thermally grown SiO2 surfaces. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. The un-annealed Cu thin films exhibit higher resistivity than the annealed films. The resistivities of un-annealed films were in good agreement with Mayadas and Shatzkes model. When annealed the films undergoes grain growth resulting in lowering the resistivities by about 20%-30% thereby confirming the role of grain size on resistivity of the film. However, there is a limit to annealing, i.e. agglomeration phenomenon. Agglomeration is a thermally activated process resulting in a reduction of the free energy of the film–substrate system and can occur well below the melting point of the material by surface and interfacial diffusion. The reduction of film-substrate interfacial energy, film-surface interfacial energy and stresses within the film are possible driving forces for agglomeration. This work also includes the study of agglomeration phenomenon. The agglomeration behavior of Cu is investigated and compared with that of Ru, Au and Pt thin films with thicknesses in the range of 10 nm to 100 nm UHV deposited on thermally grown SiO2 substrate. The films were annealed at temperatures in the range of 150°C to 800°C in argon and argon+3% hydrogen gases. Scanning electron microscopy was used to investigate the agglomeration behavior, and transmission electron microscopy was used to characterize the microstructure of the as-deposited and annealed films. The agglomeration sequence in all the films is found to follow a two step process of void nucleation and void growth. However, void growth in Au and Pt thin films is different from Cu and Ru thin films. Residual stress and adhesion were observed to play important part in deciding the mode of void growth in Au and Pt thin films. Lastly, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer, which in turn improves the resistivity of the thin film due to prolonged grain growth without film breakup.
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Date Issued: 2005
Identifier: CFE0000496, ucf:46363
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000496

Title: INVESTIGATION OF REACTIVELY SPUTTERED SILICON CARBON BORON NITRIDE (SICBN) THIN FILMS FOR HIGH TEMPERATURE APPLICATIONS.
Creator: Vijayakumar, Arun, Sundaram, Kalpathy, University of Central Florida
Abstract / Description: The increasing demand for efficient energy systems in the last decade has brought about the development of advanced sensor systems that utilize advance detection methods to help in preventive maintenance of these essential systems. These usually are needed in hard to access environments where conditions are extreme and unfit for human interaction. Thin film based sensors deposited directly on the surfaces exposed to harsh environments can serve as ideal means of measuring the temperature of...
Show moreThe increasing demand for efficient energy systems in the last decade has brought about the development of advanced sensor systems that utilize advance detection methods to help in preventive maintenance of these essential systems. These usually are needed in hard to access environments where conditions are extreme and unfit for human interaction. Thin film based sensors deposited directly on the surfaces exposed to harsh environments can serve as ideal means of measuring the temperature of the component during operation. They provide the basic advantage of proximity to the surface and hence accurate measurement of the surface temperature. The low mass size ratio provides the additional advantage of least interference to system operation. The four elements consisting of Si, C, B, and N can be used to form binary, ternary and quaternary compounds like carbides, nitrides, which are chemically and thermally stable with extreme hardness, thermal conductivity and can be doped n- and p-type. Hence these compounds can be potential candidates for high temperature applications. This research is focused on studying sputtering as a candidate to obtain thin SiCBN films. The deposition and characterization of amorphous thin films of silicon boron carbon nitride (SiCBN) is reported. The SiCBN thin films were deposited in a radio frequency (rf) magnetron sputtering system using reactive co-sputtering of silicon carbide (SiC) and boron nitride (BN) targets. Films of different compositions were deposited by varying the ratios of argon and nitrogen gas in the sputtering ambient. Investigation of the oxidation kinetics of these materials was performed to study high temperature compatibility of the material. Surface characterization of the deposited films was performed using X-ray photoelectron spectroscopy and optical profilometry. Studies reveal that the chemical state of the films is highly sensitive to nitrogen flow ratios during sputtering. Surface analysis shows that smooth and uniform SiCBN films can be produced using this technique. Carbon and nitrogen content in the films seem to be sensitive to annealing temperatures. However depth profile studies reveal certain stoichiometric compositions to be stable after high temperature anneal up to 900ºC. Electrical and optical characteristics are also investigated with interesting results. Finally a metal semiconductor metal structure based optoelectronic device is demonstrated with excellent performance improvement over standard silicon based devices under higher temperature conditions.
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Date Issued: 2007
Identifier: CFE0001914, ucf:47490
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001914

thin film (8)	+ -
Thin Films (6)	+ -
CIGS (3)	+ -
CIGSeS (3)	+ -
Cu (3)	+ -

Sputtering (3)	+ -
Thin Film (3)	+ -
Agglomeration (2)	+ -
CIGS2 (2)	+ -
MBE (2)	+ -
Reflectometry (2)	+ -
TEM (2)	+ -
Thin film (2)	+ -
Thin films (2)	+ -
XPS (2)	+ -
low-k materials (2)	+ -
resistivity (2)	+ -
thin-film solar cells (2)	+ -
Ab-initio (1)	+ -
Acoustic (1)	+ -
Alteration of resistivity (1)	+ -
Anti-reflective Coating (1)	+ -
Au (1)	+ -
BCN (1)	+ -
BCN etching (1)	+ -
BN (1)	+ -
Band Gap (1)	+ -
Biosensors (1)	+ -
Boron carbon nitride (BCN) (1)	+ -
CIGS solar cells (1)	+ -

ETD Collection (40)	+ -
Honors Collection (2)	+ -

University of Central Florida (42)	+ -
Sundaram, Kalpathy (9)	+ -
Dhere, Neelkanth (6)	+ -
Coffey, Kevin (5)	+ -
Chow, Louis (4)	+ -

Heinrich, Helge (3)	+ -
Malocha, Donald (3)	+ -
Peale, Robert (3)	+ -
Schoenfeld, Winston (3)	+ -
Yuan, Jiann-Shiun (3)	+ -
Boreman, Glenn (2)	+ -
Chanda, Debashis (2)	+ -
Chen, Quanfang (2)	+ -
Gong, Xun (2)	+ -
Likamwa, Patrick (2)	+ -
Prakash, Adithya (2)	+ -
Putnam, Shawn (2)	+ -
Zhai, Lei (2)	+ -
Zou, Shengli (2)	+ -
Abdolvand, Reza (1)	+ -
Aminpour, Maral (1)	+ -
An, Linan (1)	+ -
Arends-Rodriguez, Armando (1)	+ -
Barmak, Katayun (1)	+ -
Blair, Richard (1)	+ -
Borge, Amruta (1)	+ -
Boroumand Azad, Javaneh (1)	+ -
Boutwell, Ryan (1)	+ -
Campiglia, Andres (1)	+ -
Chen, Ruey-Hung (1)	+ -

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