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NEW LASER TECHNOLOGIES: ANALYSIS OF QUANTUM DOT ANDLITHOGRAPHIC LASER DIODES
Title
NEW LASER TECHNOLOGIES: ANALYSIS OF QUANTUM DOT ANDLITHOGRAPHIC LASER DIODES.
Creator
Demir, Abdullah, Deppe, Dennis, University of Central Florida
Abstract / Description
The first part of this dissertation presents a comprehensive study of quantum dot (QD) lasers threshold characteristics. The threshold temperature dependence of a QD laser diode is studied in different limits of p-doping, hole level spacing and inhomogeneous broadening. Theoretical analysis shows that the threshold current of a QD laser in the limit of uniform QDs is not temperature independent and actually more temperature sensitive than the quantum well laser. The results also explain the...
Show moreThe first part of this dissertation presents a comprehensive study of quantum dot (QD) lasers threshold characteristics. The threshold temperature dependence of a QD laser diode is studied in different limits of p-doping, hole level spacing and inhomogeneous broadening. Theoretical analysis shows that the threshold current of a QD laser in the limit of uniform QDs is not temperature independent and actually more temperature sensitive than the quantum well laser. The results also explain the experimental trends of negative characteristic temperature observed in QD lasers and clarify how the carrier distribution mechanisms inside and among the QDs affect the threshold temperature dependence of a QD laser diode. The second part is on the experimental demonstration of lithographic lasers. Today's vertical-cavity surface-emitting lasers (VCSELs) based on oxide-aperture suffer from serious problems such as heat dissipation, internal strain, reliability, uniformity and size scaling. The lithographic laser provides solutions to all these problems. The transverse mode and cavity are defined using only lithography and epitaxial crystal growth providing simultaneous mode- and current-confinement. Eliminating the oxide aperture is shown to reduce the thermal resistance of the device and leading to increased power density in smaller lasers. When it is combined with better mode matching to gain for smaller devices, high output power density of 58 kW/cm2 is possible for a 3 micron VCSEL with threshold current of 260 microamperes. These VCSELs also have grating-free single-mode single-polarization emission. The demonstration of lithographic laser diodes with good scaling properties is therefore an important step toward producing ultra-small size laser diodes with high output power density, high speed, high manufacturability and high reliability. Lithographic VCSELs ability to control size lithographically in a strain-free, high efficiency device is a major milestone in VCSEL technology.
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Date Issued
2010
Identifier
CFE0003304, ucf:48494
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0003304
Cryogenic performance projections for ultra-small oxide-free vertical-cavity surface-emitting lasers
Title
Cryogenic performance projections for ultra-small oxide-free vertical-cavity surface-emitting lasers.
Creator
Bayat, Mina, Deppe, Dennis, Li, Guifang, Schoenfeld, Winston, Lyakh, Arkadiy, University of Central Florida
Abstract / Description
Small-sized vertical-cavity surface-emitting laser (VCSEL) may offer very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has application in supercomputers and superconducting for efficient computing and also focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free...
Show moreSmall-sized vertical-cavity surface-emitting laser (VCSEL) may offer very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has application in supercomputers and superconducting for efficient computing and also focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free VCSEL sizes of 2 to 6 (&)#181;m, that have been shown to operate efficiently at room temperature. Temperature dependent operation for optimally-designed VCSELs are studied by calculating the response of the laser at 77 K and 4 K to estimate their bias conditions needed to reach modulation speed for cryogenic optical links. The temperature influence is to decrease threshold for reducing temperature, and to increase differential gain for reducing temperature. The two effects predict very low bias currents for small cavity VCSELs to reach needed data speed for cryogenic optical data links. Projections are made for different cavity structures (half-wave cavity and full-wave cavity) shown that half-wave cavity structure has better performance. Changing the number of top-mirror pairs has also been studied to determine how cavity design impacts speed and bit energy. Our design and performance predictions paves the way for realizing highly efficient, ultra-small VCSEL arrays with applications in optical interconnects.
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Date Issued
2019
Identifier
CFE0007782, ucf:52330
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0007782
Self-heating control of edge emitting and vertical cavity surface emitting lasers
Title
Self-heating control of edge emitting and vertical cavity surface emitting lasers.
Creator
Zhang, Yu, Deppe, Dennis, Fathpour, Sasan, Likamwa, Patrick, Wu, Thomas, University of Central Florida
Abstract / Description
Self-heating leads to temperature rise of laser diode and limits the output power, efficiency and modulation bandwidth due to increased loss and decreased differential gain. The main heat sources in laser diode during continuous wave operation are Joule heating and free carrier absorption loss. To control device self-heating, the epi structure needs to be designed with low electrical resistance and low absorption loss, while the heat flux must spread out of the device efficiently. This...
Show moreSelf-heating leads to temperature rise of laser diode and limits the output power, efficiency and modulation bandwidth due to increased loss and decreased differential gain. The main heat sources in laser diode during continuous wave operation are Joule heating and free carrier absorption loss. To control device self-heating, the epi structure needs to be designed with low electrical resistance and low absorption loss, while the heat flux must spread out of the device efficiently. This dissertation presents the control of self-heating of both edge emitting laser diodes and vertical cavity surface emitting lasers (VCSELs). For the 980nm high power edge emitting laser, asymmetric waveguide is used for low free carrier absorption loss. The waveguide and cladding materials are optimized for high injection efficiency. BeO heatsink is applied to spread the heat efficiently. Injection efficiency of 71% and internal loss of 0.3 cm-1 have been achieved. A total output power of 9.3 W is measured from 0.5cm long device at 14.5A injection current. To further reduce the internal loss, the development of 980nm quantum dot active region is studied. Threshold current density as low as 59A/cm2 is reached. For the VCSELs, oxide-free structure is used to solve the self-heating problem of oxide VCSELs. Removing the oxide layer and using AlAs in the DBRs leads to record low thermal resistance. Optimization of the DBRs leads to low resistance and low free carrier absorption. Power conversion efficiency higher than 50% is achieved. To further reduce device voltage and heat generation, the development of intracavity contacts devices is introduced.
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Date Issued
2014
Identifier
CFE0005749, ucf:50076
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0005749