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COMPARISON OF THEORETICAL MODELS OF POWER SPECTRAL DENSITY TO THE EXPERIMENTAL VALUE FOR SPECTRUM OF IRRADIANCE FLUCTUATIONS
Title
COMPARISON OF THEORETICAL MODELS OF POWER SPECTRAL DENSITY TO THE EXPERIMENTAL VALUE FOR SPECTRUM OF IRRADIANCE FLUCTUATIONS.
Creator
Hershberger, Craig, Phillips, Ronald, University of Central Florida
Abstract / Description
A propagation experiment was designed, assembled, and conducted on an extended range to verify theoretical temporal models for weak to strong fluctuation theory. Laser light intensity was propagated over terrain at the Kennedy Space Center (Florida), and detected using optical receivers at a distance of 13.3 Km from the optical source. The intensity data from the experiment was used to generate an experimental Power Spectral Density (PSD) function. The theoretical Mutual Coherence Function ...
Show moreA propagation experiment was designed, assembled, and conducted on an extended range to verify theoretical temporal models for weak to strong fluctuation theory. Laser light intensity was propagated over terrain at the Kennedy Space Center (Florida), and detected using optical receivers at a distance of 13.3 Km from the optical source. The intensity data from the experiment was used to generate an experimental Power Spectral Density (PSD) function. The theoretical Mutual Coherence Function (MCF) and Wave Structure Function (WSF) as set forth by Andrews/Phillips , were evaluated to determine the effective relationship between the statistical moments of the random optical field and the laser light intensity. Two scales of interest were identified (refractive large-scale and diffractive small-scale) and plotted revealing the characteristic shape of each component. In addition, statistical principles applied to the correlation/covariance function relationship and a graphical convolution process were used to generate a theoretical PSD function. Further, utilizing Taylor's "frozen turbulence" hypothesis an analysis of the theoretical temporal covariance function was performed. Functional forms for refractive and diffractive log-irradiance components were developed and used to generate a second theoretical PSD function. Finally, the experimental and theoretical Power Spectral Density functions are plotted on the same graph and a comparison is performed.
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Date Issued
2008
Identifier
CFE0002403, ucf:47734
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0002403
FADE STATISTICS FOR A LASERCOM SYSTEM AND THE JOINT PDF OF A GAMMA-GAMMA DISTRIBUTED IRRADIANCE AND ITS TIME DERIVATIVE
Title
FADE STATISTICS FOR A LASERCOM SYSTEM AND THE JOINT PDF OF A GAMMA-GAMMA DISTRIBUTED IRRADIANCE AND ITS TIME DERIVATIVE.
Creator
Stromqvist Vetelino, Frida, Young, Cynthia, University of Central Florida
Abstract / Description
The performance of lasercom systems operating in the atmosphere is reduced by optical turbulence, which causes irradiance fluctuations in the received signal. The result is a randomly fading signal. Fade statistics for lasercom systems are determined from the probability density function (PDF) of the irradiance fluctuations. The expected number of fades per second and their mean fade time require the joint PDF of the fluctuating irradiance and its time derivative. Theoretical integral...
Show moreThe performance of lasercom systems operating in the atmosphere is reduced by optical turbulence, which causes irradiance fluctuations in the received signal. The result is a randomly fading signal. Fade statistics for lasercom systems are determined from the probability density function (PDF) of the irradiance fluctuations. The expected number of fades per second and their mean fade time require the joint PDF of the fluctuating irradiance and its time derivative. Theoretical integral expressions, as well as closed form, analytical approximations, were developed for the joint PDF of a gamma-gamma distributed irradiance and its time derivative, and the corresponding expression for the expected number of fades per second. The new approximation for the conditional PDF of the time derivative of a gamma-gamma irradiance is a zero mean Gaussian distribution, with a complicated irradiance depending variance. Fade statistics obtained from experimental data were compared to theoretical predictions based on the lognormal and gamma-gamma distributions. A Gaussian beam wave was propagated through the atmosphere along a horizontal path, near ground, in the moderate-to-strong optical turbulence. To characterize the propagation path, a new method that infers atmospheric propagation parameters was developed. Scintillation theory combined with a numerical scheme was used to infer the structure constant, Cn2, the inner scale and the outer scale from the optical measurements. The inferred parameters were used in calculations for the theoretical PDFs. It was found that fade predictions made by the gamma-gamma and lognormal distributions provide an upper and lower bound, respectively, for the probability of fade and the number of fades per second for irradiance data collected in the moderate-to-strong fluctuation regime. Aperture averaging effects on the PDF of the irradiance fluctuations were investigated by comparing the irradiance distributions for the three receiver apertures at two different values of the structure parameter and, hence, different values of the coherence radius. For the moderate-to-strong fluctuation regime, the gamma-gamma distribution provides a good fit to the irradiance fluctuations collected by finite-sized apertures that are significantly smaller than the coherence radius. For apertures larger than or equal to the coherence radius, the irradiance fluctuations appear to be lognormally distributed.
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Date Issued
2006
Identifier
CFE0001440, ucf:47069
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0001440
A STUDY OF EQUATORIAL IONOPSHERIC VARIABILITY USING SIGNAL PROCESSING TECHNIQUES
Title
A STUDY OF EQUATORIAL IONOPSHERIC VARIABILITY USING SIGNAL PROCESSING TECHNIQUES.
Creator
wang, xiaoni, Eastes, Richard, University of Central Florida
Abstract / Description
The dependence of equatorial ionosphere on solar irradiances and geomagnetic activity are studied in this dissertation using signal processing techniques. The statistical time series, digital signal processing and wavelet methods are applied to study the ionospheric variations. The ionospheric data used are the Total Electron Content (TEC) and the critical frequency of the F2 layer (foF2). Solar irradiance data are from recent satellites, the Student Nitric Oxide Explorer (SNOE) satellite and...
Show moreThe dependence of equatorial ionosphere on solar irradiances and geomagnetic activity are studied in this dissertation using signal processing techniques. The statistical time series, digital signal processing and wavelet methods are applied to study the ionospheric variations. The ionospheric data used are the Total Electron Content (TEC) and the critical frequency of the F2 layer (foF2). Solar irradiance data are from recent satellites, the Student Nitric Oxide Explorer (SNOE) satellite and the Thermosphere Ionosphere Mesosphere Energetics Dynamics (TIMED) satellite. The Disturbance Storm-Time (Dst) index is used as a proxy of geomagnetic activity in the equatorial region. The results are summarized as follows. (1) In the short-term variations < 27-days, the previous three days solar irradiances have significant correlation with the present day ionospheric data using TEC, which may contribute 18% of the total variations in the TEC. The 3-day delay between solar irradiances and TEC suggests the effects of neutral densities on the ionosphere. The correlations between solar irradiances and TEC are significantly higher than those using the F10.7 flux, a conventional proxy for short wavelength band of solar irradiances. (2) For variations < 27 days, solar soft X-rays show similar or higher correlations with the ionosphere electron densities than the Extreme Ultraviolet (EUV). The correlations between solar irradiances and foF2 decrease from morning (0.5) to the afternoon (0.1). (3) Geomagnetic activity plays an important role in the ionosphere in short-term variations < 10 days. The average correlation between TEC and Dst is 0.4 at 2-3, 3-5, 5-9 and 9-11 day scales, which is higher than those between foF2 and Dst. The correlations between TEC and Dst increase from morning to afternoon. The moderate/quiet geomagnetic activity plays a distinct role in these short-term variations of the ionosphere (~0.3 correlation).
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Date Issued
2007
Identifier
CFE0001602, ucf:47188
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0001602
THE PDF OF IRRADIANCE FOR A FREE-SPACE OPTICAL COMMUNICATIONS CHANNEL: A PHYSICS BASED MODEL
Title
THE PDF OF IRRADIANCE FOR A FREE-SPACE OPTICAL COMMUNICATIONS CHANNEL: A PHYSICS BASED MODEL.
Creator
Wayne, David, Phillips, Ronald, University of Central Florida
Abstract / Description
An accurate PDF of irradiance for a FSO channel is important when designing a laser radar, active laser imaging, or a communications system to operate over the channel. Parameters such as detector threshold level, probability of detection, mean fade time, number of fades, BER, and SNR are derived from the PDF and determine the design constraints of the receiver, transmitter, and corresponding electronics. Current PDF models of irradiance, such as the Gamma-Gamma, do not fully capture the...
Show moreAn accurate PDF of irradiance for a FSO channel is important when designing a laser radar, active laser imaging, or a communications system to operate over the channel. Parameters such as detector threshold level, probability of detection, mean fade time, number of fades, BER, and SNR are derived from the PDF and determine the design constraints of the receiver, transmitter, and corresponding electronics. Current PDF models of irradiance, such as the Gamma-Gamma, do not fully capture the effect of aperture averaging; a reduction in scintillation as the diameter of the collecting optic is increased. The Gamma-Gamma PDF of irradiance is an attractive solution because the parameters of the distribution are derived strictly from atmospheric turbulence parameters; propagation path length, Cn2, l0, and L0. This dissertation describes a heuristic physics-based modeling technique to develop a new PDF of irradiance based upon the optical field. The goal of the new PDF is three-fold: capture the physics of the turbulent atmosphere, better describe aperture averaging effects, and relate parameters of the new model to measurable atmospheric parameters. The modeling decomposes the propagating electromagnetic field into a sum of independent random-amplitude spatial plane waves using an approximation to the Karhunen-Loeve expansion. The scattering effects of the turbulence along the propagation path define the random-amplitude of each component of the expansion. The resulting PDF of irradiance is a double finite sum containing a Bessel function. The newly developed PDF is a generalization of the Gamma-Gamma PDF, and reduces to such in the limit. An experiment was setup and performed to measure the PDF of irradiance for several receiver aperture sizes under moderate to strong turbulence conditions. The propagation path was instrumented with scintillometers and anemometers to characterize the turbulence conditions. The newly developed PDF model and the GG model were compared to histograms of the experimental data. The new PDF model was typically able to match the data as well or better than the GG model under conditions of moderate aperture averaging. The GG model fit the data better than the new PDF under conditions of significant aperture averaging. Due to a limiting scintillation index value of 3, the new PDF was not compared to the GG for point apertures under strong turbulence; a regime where the GG is known to fit data well.
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Date Issued
2010
Identifier
CFE0003209, ucf:48576
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0003209
IMPACT OF GAMMA-IRRADIATION ON THE CHARACTERISTICS OF III-N/GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS
Title
IMPACT OF GAMMA-IRRADIATION ON THE CHARACTERISTICS OF III-N/GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS.
Creator
Yadav, Anupama, Flitsiyan, Elena, Chernyak, Leonid, Peale, Robert, Richie, Samuel, University of Central Florida
Abstract / Description
In this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a...
Show moreIn this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties were analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a significant role in development and design of radiation resistant semiconductor components for different applications. Electrical testing combined with temperature dependent Electron Beam Induced Current (EBIC) that we used in our investigations, provided critical information on defects induced in the material because of gamma-irradiation. It was shown that low dose (below ~250 Gy) and high doses (above ~250 Gy) of gamma-irradiation affects the AlGaN/GaN HEMTs due to different mechanisms. For low doses of gamma-irradiation, the improvement in minority carrier diffusion length is likely associated with the irradiation-induced growing lifetime of the non-equilibrium carriers. However, with the increased dose of irradiation (above ~ 250 Gy), the concentration of point defects, such as nitrogen vacancies, as well as the complexes involving native defects increases which results in the non-equilibrium carrier scattering. The impact of defect scattering is more pronounced at higher radiation, which leads to the degradation in the mobility and therefore the diffusion length. In addition for each device under investigation, the temperature dependent minority carrier diffusion length measurements were carried out. These measurements allowed the extraction of the activation energy for the temperature-induced enhancement of the minority carrier transport, which (activation energy) bears a signature of defect levels involved the carrier recombination process. Comparing the activation energy before and after gamma-irradiation identified the radiation-induced defect levels and their dependences. To complement EBIC measurements, spatially resolved Cathodoluminescence (CL) measurements were carried out at variable temperatures. Similar to the EBIC measurements, CL probing before and after the gamma-irradiation allowed the identification of possible defect levels generated as a result of gamma-bombardment. The observed decrease in the CL peak intensity after gamma-irradiation provides the direct evidence of the decrease in the number of recombination events. Based on the findings, the decay in the near-band-edge intensity after low-dose of gamma-irradiation (below ~250 Gy) was explained as a consequence of increased non-equilibrium carrier lifetime. For high doses (above ~250 Gy), decay in the CL intensity was observed to be related to the reduction in the mobility of charge carriers. The results of EBIC are correlated with the CL measurements in order to demonstrate that same underlying process is responsible for the changes induced by the gamma-irradiation. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate and drain characteristics. Exposure of AlGaN/GaN HEMTs to high dose of 60Co gamma-irradiation (above ~ 250 Gy) resulted in significant device degradation. Gamma-rays doses up to 1000 Gy are shown to result in positive shift in threshold voltage, a reduction in the drain current and transconductance due to increased trapping of carriers and dispersion of charge. In addition, a significant increase in the gate leakage current was observed in both forward and reverse directions after irradiation. Post-irradiation annealing at relatively low temperature was shown to restore the minority carrier transport as well as the electrical characteristics of the devices. The level of recovery of gamma-irradiated devices after annealing treatment depends on the dose of the irradiation. The devices that show most recovery for a particular annealing temperature are those exposed to the low doses of gamma-irradiation, while those exposed to the highest doses results in no recovery of performance. The latter fact indicates that a higher device annealing temperature is needed for larger doses of gamma-irradiation.
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Date Issued
2016
Identifier
CFE0006424, ucf:51458
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0006424
INTERDIFFUSION BEHAVIOR OF U-MO ALLOYS IN CONTACT WITH AL AND AL-SI ALLOYS
Title
INTERDIFFUSION BEHAVIOR OF U-MO ALLOYS IN CONTACT WITH AL AND AL-SI ALLOYS.
Creator
Perez, Emmanuel, Sohn, Yong-Ho, University of Central Florida
Abstract / Description
U-Mo dispersion and monolithic fuels embedded in Al-alloy matrix are under development to fulfill the requirements of research reactors to use low-enriched molybdenum stabilized uranium alloys as fuels. The system under consideration in this study consisted of body centered cubic (gamma) U-Mo alloys embedded in an Al structural matrix. Significant interaction has been observed to take place between the U-Mo fuel and the Al matrix during manufacturing of the fuel-plate system assembly and...
Show moreU-Mo dispersion and monolithic fuels embedded in Al-alloy matrix are under development to fulfill the requirements of research reactors to use low-enriched molybdenum stabilized uranium alloys as fuels. The system under consideration in this study consisted of body centered cubic (gamma) U-Mo alloys embedded in an Al structural matrix. Significant interaction has been observed to take place between the U-Mo fuel and the Al matrix during manufacturing of the fuel-plate system assembly and during irradiation in reactors. These interactions produce Al-rich phases with physical and thermal properties that adversely affect the performance of the fuel system and can lead to premature failure. In this study, interdiffusion and microstructural development in the U-Mo vs. Al system was examined using solid-to-solid diffusion couples consisting of U-7wt.%Mo, U-10wt.%Mo and U-12wt.%Mo vs. pure Al, annealed at 600°C for 24 hours. The influence of Si alloying addition (up to 5 wt.%) in Al on the interdiffusion microstructural development was also examined using solid-to-solid diffusion couples consisting of U-7wt.%Mo, U-10wt.%Mo and U-12wt.%Mo vs. pure Al, Al-2wt.%Si, and Al-5wt.%Si annealed at 550°C for 1, 5 and 20 hours. To further clarify the diffusional behavior in the U-Mo-Al and U-Mo-Al-Si systems, Al-rich 85.7Al-11.44U-2.86Mo, 87.5Al-10U-2.5Mo, 56.1Al-18.9Si-21.9U-3.1Mo and 69.3Al-11.9Si-18.8U (at.%) alloys were cast and homogenized at 500°C to determine the equilibrium phases of the system. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron probe microanalysis (EPMA) and X-ray diffraction (XRD) were employed to examine the phase development in the diffusion couples and the cast alloys. In ternary U-Mo-Al diffusion couples annealed at 600°C for 24 hours, the interdiffusion microstructure consisted of finely dispersed UAl3, UAl4, U6Mo4Al43, and UMo2Al20 phases while the average composition throughout the interdiffusion zone remained constant at approximately 80 at.% Al. The interdiffusion microstructures observed by EPMA, SEM and TEM analyses were correlated to explain the observed morphological development in the interdiffusion zones. The concept of thermodynamic degrees of freedom was used to justify that, although deviations are apparent, the interdiffusion zones did not significantly deviate from an equilibrium condition in order for the observed microstructures to develop. Selected diffusion couples developed periodic bands within the interdiffusion zone as sub-layers in the three-phase regions. Observation of periodic banding was utilized to augment the hypothesis that internal stresses play a significant role in the phase development and evolution of U-Mo vs. pure Al diffusion couples. The addition of Si (up to 5 wt.%) to the Al significantly reduced the growth rate of the interdiffusion zone. The constituent phases and composition within the interdiffusion zone were also modified. When Si was present in the Al terminal alloys, the interdiffusion zones developed layered morphologies with fine distributions of the (U,Mo)(Al,Si)3 and UMo2Al20 phases. The U6Mo4Al43 phase was observed scarcely in Si depleted regions within the interdiffusion zone. The phase development and evolution of the interdiffusion zone was described in terms of thermodynamic degrees of freedom with minimal deviations from equilibrium.
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Date Issued
2011
Identifier
CFE0003747, ucf:48778
Format
Document (PDF)
PURL
http://purl.flvc.org/ucf/fd/CFE0003747