View All Items

Title: Multiscale simulation of laser ablation and processing of semiconductor materials.
Creator: Shokeen, Lalit, Schelling, Patrick, Kar, Aravinda, Vaidyanathan, Rajan, Su, Ming, Kara, Abdelkader, University of Central Florida
Abstract / Description: We present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The...
Show moreWe present a multiscale model of laser-solid interactions in silicon based on an empirical potential developed under conditions of strong electronic excitations. The parameters of the interatomic potential depends on the temperature of the electronic subsystem Te, which is directly related to the density of the electron-hole pairs and hence the number of broken bonds. We analyze the dynamics of this potential as a function of electronic temperature Te and lattice temperature Tion. The potential predicts phonon spectra in good agreement with finite-temperature density-functional theory (DFT), including the lattice instability induced by the high electronic excitations. For 25fs pulse, a wide range of fluence values is simulated resulting in heterogeneous melting, homogenous melting, and ablation. The results presented demonstrate that phase transitions can usually be described by ordinary thermal processes even when the electronic temperature Te is much greater than the lattice temperature TL during the transition. However, the evolution of the system and details of the phase transitions depend strongly on Te and corresponding density of broken bonds. For high enough laser fluence, homogeneous melting is followed by rapid expansion of the superheated liquid and ablation. Rapid expansion of the superheated liquid occurs partly due to the high pressures generated by a high density of broken bonds. As a result, the system is readily driven into the liquid-vapor coexistence region, which initiates phase explosion. The results strongly indicates that phase explosion, generally thought of as an ordinary thermal process, can occur even under strong non-equilibrium conditions when Te (>)(>)TL. In summary, a detailed investigation of laser-solid interactions in silicon is presented for femtosecond laser pulse that yields strong far-from-equilibrium conditions.
Show less
Date Issued: 2012
Identifier: CFE0004599, ucf:49206
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004599

Title: Electrical Parasitic Bandwidth Limitations of Oxide-Free Lithographic Vertical-Cavity Surface-Emitting Lasers.
Creator: Yang, Xu, Deppe, Dennis, Fathpour, Sasan, Wu, Shintson, Gong, Xun, University of Central Florida
Abstract / Description: Nowadays, Vertical-Cavity Surface-Emitting Lasers (VCSELs) are the most popular optical sources in short-reach data communications. In the commercial oxide VCSEL technology, an oxide aperture is created inside resonant cavity in realizing good mode and current confinement, however, high electrical resistance comes along with forming the oxide aperture and the electrical parasitic bandwidth becomes the main limitation in modulation speed. In this report, electrical bandwidths of oxide-free...
Show moreNowadays, Vertical-Cavity Surface-Emitting Lasers (VCSELs) are the most popular optical sources in short-reach data communications. In the commercial oxide VCSEL technology, an oxide aperture is created inside resonant cavity in realizing good mode and current confinement, however, high electrical resistance comes along with forming the oxide aperture and the electrical parasitic bandwidth becomes the main limitation in modulation speed. In this report, electrical bandwidths of oxide-free lithographic VCSELs have been studied along with their general lasing properties. Due to the new ways of fabricating the aperture, record low resistances have been achieved in oxide-free lithographic VCSELs with various sizes, while high slope efficiencies and high output powers have been maintained. High speed simulation has been performed showing the very low differential resistances will benefit much to the electrical parasitic bandwidths, and are expected to produce higher modulation speed. A bottom emitting structure has been proposed and analyzed, showing reduction in both mirror resistance and capacitance will further improve the modulation speed. The total 3-dB modulation bandwidth is expected to be 50-80 GHz, much higher than the bandwidth reached in existing oxide VCSELs. Lithographic VCSELs also show superior lasing characteristics, including record low thermal resistance and record high output power. The maximum power exceeds 19 mW in a 6 (&)#181;m device and over 50 % power conversion efficiency has been achieved. A maximum single mode operation power of 5 mW has been observed from a 1 (&)#181;m diameter VCSEL. High temperature stress testing has been performed showing lithographic VCSELs can operate more reliably than oxide VCSELs under extreme operating conditions. Lithographic VCSEL with low electrical resistance, single-mode operation, high efficiency, and high power will be a strong candidate as the optical source in high speed data communications, as well as other applications such as high power VCSEL arrays and optical sensing.
Show less
Date Issued: 2016
Identifier: CFE0006425, ucf:51491
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006425

Title: EXTERNAL CAVITY MULTIWAVELENGTH SEMICONDUCTOR MODE-LOCKED LASER GAIN DYNAMICS.
Creator: Archundia-Berra, Luis, Delfyett, Peter, University of Central Florida
Abstract / Description: External cavity semiconductor mode-locked lasers can produce pulses of a few picoseconds. The pulses from these lasers are inherently chirped with a predominant linear chirp component that can be compensated resulting in sub-picosecond pulses. External cavity semiconductor mode-locked lasers can be configured as multiwavelength pulse sources and are good candidates for time and wavelength division multiplexing applications. The gain medium in external cavity semiconductor mode-locked lasers...
Show moreExternal cavity semiconductor mode-locked lasers can produce pulses of a few picoseconds. The pulses from these lasers are inherently chirped with a predominant linear chirp component that can be compensated resulting in sub-picosecond pulses. External cavity semiconductor mode-locked lasers can be configured as multiwavelength pulse sources and are good candidates for time and wavelength division multiplexing applications. The gain medium in external cavity semiconductor mode-locked lasers is a semiconductor optical amplifier (SOA), and passive and hybrid mode-locked operation are achieved by the introduction of a saturable absorber (SA) in the laser cavity. Pump-probe techniques were used to measure the intracavity absorption dynamics of a SA in an external cavity semiconductor mode-locked laser and the gain dynamics of a SOA for the amplification of diverse pulses. The SOA gain dynamics measurements include the amplification of 750 fs pulses, 6.5 ps pulses, multiwavelength pulses and the intracavity gain dynamics of an external cavity multiwavelength semiconductor mode-locked laser. The experimental results show how the inherent chirp on pulses from external cavity semiconductor mode-locked lasers results in a slow gain depletion without significant fast gain dynamics. In the multiwavelength operation regime of these lasers, the chirp broadens the temporal pulse profile and decreases the temporal beating resulting from the phase correlation among wavelength channels. This results in a slow gain depletion mitigating nonlinearities and gain competition among wavelength channels in the SOA supporting the multiwavelength operation of the laser. Numerical simulations support the experimental results.
Show less
Date Issued: 2006
Identifier: CFE0001359, ucf:46984
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001359

Title: Fundamental Properties of Metallic Nanolasers.
Creator: Hayenga, William, Khajavikhan, Mercedeh, Christodoulides, Demetrios, Likamwa, Patrick, Abdolvand, Reza, University of Central Florida
Abstract / Description: The last two decades have witnessed tremendous advancements in the area of nanophotonics and plasmonics, which has helped propel the development of integrated photonic sources. Of central importance to such circuits is compact, scalable, low threshold, and efficient coherent sources that can be driven at high modulation frequencies. In this regard, metallic nanolasers offer a unique platform. Their introduction has enabled confinement of light at a subwavelength scale and the ultra-small size...
Show moreThe last two decades have witnessed tremendous advancements in the area of nanophotonics and plasmonics, which has helped propel the development of integrated photonic sources. Of central importance to such circuits is compact, scalable, low threshold, and efficient coherent sources that can be driven at high modulation frequencies. In this regard, metallic nanolasers offer a unique platform. Their introduction has enabled confinement of light at a subwavelength scale and the ultra-small size of the modes afforded by these structures allows for cavity enhancing effects that can help facilitate thresholdless lasing and large direct modulation bandwidths. In this report, I present my work on the study of the fundamental properties of metallic nanolasers. I start with a rate equation model to predict threshold behavior and the modulation response of metallic nanolasers. Next, I explain the second-order coherence measurement setup that was built, based on a modified Hanbury-Brown and Twiss experiment, to assess the intensity autocorrelation of various optically pumped metallic nanolasers. These studies concluded that metallic coaxial and disk-shaped nanolasers are capable of generating truly coherent radiation. Subsequently, design considerations are taken into account for electrically pumped coaxial nanolasers. This has led to the demonstration of electrically injected coaxial and disk-shaped nanolasers at cryogenic temperatures. Lastly, the appearance of collective behaviors in metallic nanolasers lattices is explored. Individually supporting modes that are highly vectorial by nature, when such cavities are fabricated in close proximity to one another, coupling through their overlapping fields results in the formation of a set of supermodes. The tendency of the system to minimize the overall loss leads to each element of the lattice having a geometric dependent field distribution and helps promotes single-mode lasing. We show both through simulations and experimentally that this effect can lead to the direct generation of vector vortices.
Show less
Date Issued: 2018
Identifier: CFE0007752, ucf:52391
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007752

Title: MONOLITHIC INTEGRATION OF DUAL OPTICAL ELEMENTS ON HIGH POWER SEMICONDUCTOR LASERS.
Creator: vaissie, laurent, Johnson, Eric, University of Central Florida
Abstract / Description: This dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to...
Show moreThis dissertation investigates the monolithic integration of dual optical elements on high power semiconductor lasers for emission around 980nm wavelength. In the proposed configuration, light is coupled out of the AlGaAs/GaAs waveguide by a low reflectivity grating coupler towards the substrate where a second monolithic optical element is integrated to improve the device performance or functionality. A fabrication process based on electron beam lithography and plasma etching was developed to control the grating coupler duty cycle and shape. The near-field intensity profile outcoupled by the grating is modeled using a combination of finite-difference time domain (FDTD) analysis of the nonuniform grating and a self-consistent model of the broad area active region. Improvement of the near-field intensity profile in good agreement with the FDTD model is demonstrated by varying the duty cycle from 20% to 55% and including the aspect ratio dependent etching (ARDE) for sub-micron features. The grating diffraction efficiency is estimated to be higher than 95% using a detailed analysis of the losses mechanisms of the device. The grating reflectivity is estimated to be as low as 2.10-4. The low reflectivity of the light extraction process is shown to increase the device efficiency and efficiently suppress lasing oscillations if both cleaved facets are replaced by grating couplers to produce 1.5W QCW with 11nm bandwidth into a single spot a few mm above the device. Peak power in excess of 30W without visible COMD is achieved in this case. Having optimized, the light extraction process, we demonstrate the integration of three different optical functions on the substrate of the surface-emitting laser. First, a 40 level refractive microlens milled using focused ion beam shows a twofold reduction of the full-width half maximum 1mm above the device, showing potential for monolithic integration of coupling optics on the wafer. We then show that differential quantum efficiency of 65%, the highest reported for a grating-coupled device, can be achieved by lowering the substrate reflectivity using a 200nm period tapered subwavelength grating that has a grating wavevector oriented parallel to the electric field polarization. The low reflectivity structure shows trapezoidal sidewall profiles obtained using a soft mask erosion technique in a single etching step. Finally, we demonstrate that, unlike typical methods reported so far for in-plane beam-shaping of laser diodes, the integration of a beam-splitting element on the device substrate does not affect the device efficiency. The proposed device configuration can be tailored to satisfy a wide range of applications including high power pump lasers, superluminescent diodes, or optical amplifiers applications.
Show less
Date Issued: 2004
Identifier: CFE0000223, ucf:46253
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000223

Title: DESIGN AND MODELING OF RADIATION HARDENED LDMOSFET FOR SPACE CRAFT POWER SYSTEMS.
Creator: Shea, Patrick, Shen, John, University of Central Florida
Abstract / Description: NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in space environments. Presently vertical double-diffused MOSFETs (VDMOS) are the most widely used power switching device for space power systems. It is proposed that a new lateral double-diffused MOSFET (LDMOS) designed at UCF can offer improvements in total dose and single event radiation hardness, switching...
Show moreNASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in space environments. Presently vertical double-diffused MOSFETs (VDMOS) are the most widely used power switching device for space power systems. It is proposed that a new lateral double-diffused MOSFET (LDMOS) designed at UCF can offer improvements in total dose and single event radiation hardness, switching performance, development and manufacturing costs, and total mass of power electronics systems. Availability of a hardened fast-switching power MOSFET will allow space-borne power electronics to approach the current level of terrestrial technology, thereby facilitating the use of more modern digital electronic systems in space. It is believed that the use of a p+/p-epi starting material for the LDMOS will offer better hardness against single-event burnout (SEB) and single-event gate rupture (SEGR) when compared to vertical devices fabricated on an n+/n-epi material. By placing a source contact on the bottom-side of the p+ substrate, much of the hole current generated by a heavy ion strike will flow away from the dielectric gate, thereby reducing electrical stress on the gate and decreasing the likelihood of SEGR. Similarly, the device is hardened against SEB by the redirection of hole current away from the base of the device's parasitic bipolar transistor. Total dose hardness is achieved by the use of a standard complementary metal-oxide semiconductor (CMOS) process that has shown proven hardness against total dose radiation effects.
Show less
Date Issued: 2007
Identifier: CFE0001966, ucf:47468
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001966

Title: STABLE SPATIAL SOLITONS IN SEMICONDUCTOROPTICAL AMPLIFIERS.
Creator: ultanir, erdem ahmet, Stegeman, George I., University of Central Florida
Abstract / Description: A spatial soliton is a shape invariant self guided beam of light or a self induced waveguide.Spatial solitons appear as a result of the balance of diffraction and nonlinear focusing in asystem. They have been observed in many different conservative media in the last couple ofyears. Solitons are ubiquitous, because of the probability of using their interactions in opticaldata processing, communications etc. Up to now due to the power required to generate thesolitons, and the response times of...
Show moreA spatial soliton is a shape invariant self guided beam of light or a self induced waveguide.Spatial solitons appear as a result of the balance of diffraction and nonlinear focusing in asystem. They have been observed in many different conservative media in the last couple ofyears. Solitons are ubiquitous, because of the probability of using their interactions in opticaldata processing, communications etc. Up to now due to the power required to generate thesolitons, and the response times of the soliton supporting media, these special waves of naturecould not penetrate the applications arena. Semiconductors, with their resonant nonlinearities, arethought to be ideal candidates for fast switching, low power spatial solitons.In this dissertation it is shown theoretically and experimentally that it is possible toobserve stable spatial solitons in a periodically patterned semiconductor optical amplifier(PPSOA). The solitons have unique beam profiles that change only with system parameters, likepumping current, etc. Their coherent and incoherent interactions which could lead to all opticaldevices have been investigated experimentally and theoretically. The formation of filaments ormodulational instability has been studied theoretically and yielded analytical formulae forevaluating the filament gain and the maximum spatial frequencies in PPSOA devices.Furthermore, discrete array amplifiers have been analyzed numerically for discrete solitons, andthe prospect of using multi peak discrete solitons as laser amplifiers is discussed.
Show less
Date Issued: 2004
Identifier: CFE0000142, ucf:46153
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0000142

Title: High Power Continuous Wave Quantum Cascade Lasers With Increased Ridge Width.
Creator: Todi, Ankesh, Lyakh, Arkadiy, Huo, Qun, Tetard, Laurene, University of Central Florida
Abstract / Description: Quantum Cascade Lasers have recently gained considerable attention for their capability to emit infrared radiation in a broad infrared spectral region, very compact dimensions, and high optical power/efficiency. Increasing continuous wave optical power is one of the main research directions in the field. A straightforward approach to increasing optical power in the pulsed regime is to increase number of stages in the cascade structure. However, due to a low active region thermal conductivity,...
Show moreQuantum Cascade Lasers have recently gained considerable attention for their capability to emit infrared radiation in a broad infrared spectral region, very compact dimensions, and high optical power/efficiency. Increasing continuous wave optical power is one of the main research directions in the field. A straightforward approach to increasing optical power in the pulsed regime is to increase number of stages in the cascade structure. However, due to a low active region thermal conductivity, the increase in number of stages leads to active region overheating in continuous wave operation. In this work, an alternative approach to power scaling with device dimensions is explored: number of stages is reduced to reduce active region thermal resistance, while active region lateral size is increased for reaching high optical power level. Using this approach, power scaling for active region width increase from 10(&)#181;m to 20(&)#181;m is demonstrated for the first time. An analysis based on a simple semi-empirical model suggests that laser power can be significantly improved by increasing characteristic temperature T0 that describes temperature dependence of laser threshold current density.
Show less
Date Issued: 2017
Identifier: CFE0007137, ucf:52299
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007137

Title: INFRARED SURFACE PLASMON POLARITONS ON SEMICONDUCTOR, SEMIMETAL AND CONDUCTING POLYMER.
Creator: Shahzad, Monas, Peale, Robert, Heinrich, Helge, Coffey, Kevin, Diaz, Diego, University of Central Florida
Abstract / Description: Conductors with IR (infrared) plasma frequencies are potentially useful hosts of surface plasmon polaritons (SPPs) with subwavelength mode confinement for sensing applications. The underlying aim of this work is to identify such conductors that also have sharp SPP excitation resonances for biosensor applications at infrared (3-11 ?m) wavelengths, where biological analytes are strongly differentiated by their IR absorption spectra. In this work, various materials were investigated such as a...
Show moreConductors with IR (infrared) plasma frequencies are potentially useful hosts of surface plasmon polaritons (SPPs) with subwavelength mode confinement for sensing applications. The underlying aim of this work is to identify such conductors that also have sharp SPP excitation resonances for biosensor applications at infrared (3-11 ?m) wavelengths, where biological analytes are strongly differentiated by their IR absorption spectra. In this work, various materials were investigated such as a heavily doped semiconductor, a semimetal, a conducting polymer and its composite.Heavily doped silicon was investigated by tuning its plasma frequency to the infrared region by heavily doping. The measured complex permittivity spectra for p-type silicon with a carrier concentration of 6 (&)#215; 1019 and 6 (&)#215; 1020 cm-3 show that these materials support SPPs beyond 11 and 6 ?m wavelengths, respectively. SPP generation was observed in angular reflection spectra of doped-silicon gratings. Photon-to-plasmon coupling resonances, a necessary condition for sensing, were demonstrated near 10 ?m wavelength for the heaviest doped, and the observed resonances were confirmed theoretically using analytic calculations. The permittivity spectra were also used to calculate SPP mode heights above the silicon surface and SPP propagation lengths. Reasonable merit criteria applied to these quantities suggest that only the heaviest doped material has sensor potential, and then mainly within the wavelength range of 6 to 10 ?m. The semimetal bismuth (Bi) has an infrared plasmon frequency less than the infrared plasma frequency of noble metals such as gold and silver, which is one order of magnitude lower than their plasma frequencies. The excitation of IR surface plasmons on Bi lamellar gratings in the wavelength range of 3.4 (&)#181;m to 10.6 (&)#181;m was observed. Distinct SPP resonances were observed although the usual condition for bound SPP is not satisfied in this wavelength range because the real part of the permittivity is positive. The excitation of these resonances agrees theoretically with the electromagnetic surface waves called surface polaritons (SPs). The measured permittivity spectra were used to calculate the SP mode heights above the bismuth surface and SP propagation length, which satisfied our criteria for sensors.A conducting polymer and its composite with graphite were also investigated since their plasma frequency may lie in the infrared region. Polyaniline was chemically synthesized and doped with various acids to prepare its salt form. A composite material of polyaniline with colloidal and nano-graphite was also prepared. Optical constants were measured in the long wave infrared region (LWIR) and were used to calculate SPP propagation length and penetration depth. SPP resonance spectra were calculated and suggested that polyaniline and its composite can be used as a host with sufficient mode confinement for IR sensor application.
Show less
Date Issued: 2012
Identifier: CFE0004598, ucf:49215
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004598

Title: MODELING,DESIGN,AND CHARACTERIZATION OF MONOLITHIC BI-DIRECTIONAL POWER SEMICONDUCTOR SWITCH.
Creator: Fu, Yue, Shen, Z.John, University of Central Florida
Abstract / Description: Bidirectional power switching devices are needed in many power management applications, particularly in lithium-ion battery protection circuitry. A monolithic bidirectional power switch fabricated with a simplified CMOS technology is introduced in this dissertation. Throughout the design process, ISE TCAD tool plays an important role. Design variables are carefully analyzed to improve the device performance or yield the best trade off. Optimization is done with the help of TCAD simulation and...
Show moreBidirectional power switching devices are needed in many power management applications, particularly in lithium-ion battery protection circuitry. A monolithic bidirectional power switch fabricated with a simplified CMOS technology is introduced in this dissertation. Throughout the design process, ISE TCAD tool plays an important role. Design variables are carefully analyzed to improve the device performance or yield the best trade off. Optimization is done with the help of TCAD simulation and theoretical calculations. The device has been successfully fabricated using simplified 0.5 micron CMOS process. The experimental result shows a breakdown voltage of 25V. Due to the interdigitated source to source design, the inter-terminal current flowing path is effectively reduced to a few microns. The experimental result shows an ultra low specific on resistance. In comparison with other bi-directional power semiconductor switches by some major semiconductor manufacturers, the proposed BDS device has less than one half of the specific on resistance, thus substantially lower on state power loss of the switch. The proposed BDS device has a unique NPNPN structure, in comparison with NPNP structure, which is the analytical structure for CMOS latch-up, the proposed device inherently exhibits a better latch up immunity than CMOS inverter, thanks to the negative feed back mechanism of the extra NPN parasitic BJT transistor. In order to implement the device into simulators like PSPICE or Cadence IC Design, a compact model named variable resistance model has been built. This simple analytical model fits quite well with experimental data, and can be easily implemented by Verilog-A or other hardware description languages. Also, macro modeling is possible provided that the model parameters can be extracted from experimental curves. Several advanced types of BDS devices have been proposed, they exceed the basic BDS design in terms of breakdown voltage and /or on resistance. These advanced structures may be prominent for further improvement of the basic BDS device to a higher extend. Some cell phone providers such as Nokia is already asking for higher breakdown voltage of BDS device, due to the possibility of incidentally insert the battery pack into the cell phone with wrong pin polarity. Hopefully, the basic BDS design or one of these advanced types may eventually be implemented into the leading brand cell phone battery packs.
Show less
Date Issued: 2007
Identifier: CFE0001605, ucf:47168
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001605

Title: HIGH YIELD ASSEMBLY AND ELECTRON TRANSPORT INVESTIGATION OF SEMICONDUCTING-RICH LOCAL-GATED CARBON NANOTUBE FIELD EFFECT TRANSISTORS.
Creator: Kormondy, Kristy, Khondaker, Saiful, University of Central Florida
Abstract / Description: Single-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold swing. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Using individual local gates and scaling the gate oxide...
Show moreSingle-walled carbon nanotubes (SWNTs) are ideal for use in nanoelectronic devices because of their high current density, mobility and subthreshold swing. However, assembly methods must be developed to reproducibly align all-semiconducting SWNTs at specific locations with individually addressable gates for future integrated circuits. We show high yield assembly of local-gated semiconducting SWNTs assembled via AC-dielectrophoresis (DEP). Using individual local gates and scaling the gate oxide shows faster switching behavior and lower power consumption. The devices were assembled by DEP between prefabricated Pd source and drain electrodes with a thin Al/Al2O3 gate in the middle, and the electrical characteristics were measured before anneal and after anneal. Detailed electron transport investigations on the devices show that 99% display good FET behavior, with an average threshold voltage of 1V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8x105. Assembly yield can also be increased to 85% by considering devices where 2-5 SWNT bridge the gap between source and drain electrode. To examine the characteristics of devices bridged by more than one SWNT, similar electron transport measurements were taken for 35 devices with electrodes bridged by 2-3 SWNT and 13 devices connected by 4-5 SWNT. This high yield directed assembly of local-gated SWNT-FETs via DEP may facilitate large scale fabrication of CMOS compatible nanoelectronic devices.
Show less
Date Issued: 2011
Identifier: CFH0003841, ucf:44705
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFH0003841

Title: Thermal and Waveguide Optimization of Broad Area Quantum Cascade Laser Performance.
Creator: Suttinger, Matthew, Lyakh, Arkadiy, Bass, Michael, Vodopyanov, Konstantin, University of Central Florida
Abstract / Description: Quantum Cascade Lasers are a novel source of coherent infrared light, unique in their tunability over the mid-infrared and terahertz range of frequencies. Advances in bandgap engineering and semiconductor processing techniques in recent years have led to the development of highly efficient quantum cascade lasers capable of room temperature operation. Recent work has demonstrated power scaling with broad area quantum cascade lasers by increasing active region width beyond the standard ~10 ?m....
Show moreQuantum Cascade Lasers are a novel source of coherent infrared light, unique in their tunability over the mid-infrared and terahertz range of frequencies. Advances in bandgap engineering and semiconductor processing techniques in recent years have led to the development of highly efficient quantum cascade lasers capable of room temperature operation. Recent work has demonstrated power scaling with broad area quantum cascade lasers by increasing active region width beyond the standard ~10 ?m. Taking into account thermal effects caused by driving a device with electrical power, an experimentally fitted model is developed to predict the optical power output in both pulsed and continuous operation with varying device geometry and minor changes to quantum cascade laser active region design. The effects of the characteristic temperatures of threshold current density and slope efficiency, active region geometry, and doping, on output power are studied in the model. The model is then used to refine the active region design for increased power out in continuous operation for a broad area design. Upon testing the new design, new thermal effects on rollover current density are observed. The model is then refined to reflect the new findings and more accurately predict output power characteristics.
Show less
Date Issued: 2017
Identifier: CFE0007296, ucf:52174
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0007296

Title: QUANTUM DOT BASED MODE-LOCKED SEMICONDUCTOR LASERS AND APPLICATIONS.
Creator: Kim, Jimyung, Delfyett, Peter, University of Central Florida
Abstract / Description: In this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-PÃƒÂƒÃ‚ÂƒÃƒÂ‚Ã‚Â©rot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot...
Show moreIn this dissertation, self-assembled InAs/InGaAs quantum dot Fabry-PÃƒÂƒÃ‚ÂƒÃƒÂ‚Ã‚Â©rot lasers and mode-locked lasers are investigated. The mode-locked lasers investigated include monolithic and curved two-section devices, and colliding pulse mode-locked diode lasers. Ridge waveguide semiconductor lasers have been designed and fabricated by wet etching processes. Electroluminescence of the quantum dot lasers is studied. Cavity length dependent lasing via ground state and/or excited state transitions is observed from quantum dot lasers and the optical gain from both transitions is measured. Stable optical pulse trains via ground and excited state transitions are generated using a grating coupled external cavity with a curved two-section device. Large differences in the applied reverse bias voltage on the saturable absorber are observed for stable mode-locking from the excited and ground state mode-locking regimes. The optical pulses from quantum dot mode-locked lasers are investigated in terms of chirp sign and linear chirp magnitude. Upchirped pulses with large linear chirp magnitude are observed from both ground and excited states. Externally compressed pulse widths from the ground and excited states are 1.2 ps and 970 fs, respectively. Ground state optical pulses from monolithic mode-locked lasers e.g., two-section devices and colliding pulse mode-locked lasers, are also studied. Transformed limited optical pulses (~4.5 ps) are generated from a colliding pulse mode-locked semiconductor laser. The above threshold linewidth enhancement factor of quantum dot Fabry-PÃƒÂƒÃ‚ÂƒÃƒÂ‚Ã‚Â©rot lasers is measured using the continuous wave injection locking method. A strong spectral dependence of the linewidth enhancement factor is observed around the gain peak. The measured linewidth enhancement factor is highest at the gain peak, but becomes lower 10 nm away from the gain peak. The lowest linewidth enhancement factor is observed on the anti-Stokes side. The spectral dependence of the pulse duration from quantum dot based mode-locked lasers is also observed. Shorter pulses and reduced linear chirp are observed on the anti-Stokes side and externally compressed 660 fs pulses are achieved in this spectral regime. A novel clock recovery technique using passively mode-locked quantum dot lasers is investigated. The clock signal (~4 GHz) is recovered by injecting an interband optical pulse train to the saturable absorber section. The excited state clock signal is recovered through the ground state transition and vice-versa. Asymmetry in the locking bandwidth is observed. The measured locking bandwidth is 10 times wider when the excited state clock signal is recovered from the ground state injection, as compared to recovering a ground state clock signal from excited state injection.
Show less
Date Issued: 2010
Identifier: CFE0003295, ucf:48493
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0003295

Title: Intrinsic Modulation Response Modeling and Analysis for Lithographic Vertical-Cavity Surface-Emitting Lasers.
Creator: Li, Mingxin, Deppe, Dennis, Fathpour, Sasan, Wu, Shintson, Malocha, Donald, University of Central Florida
Abstract / Description: Vertical-cavity surface-emitting lasers (VCSELs) have been greatly improved and successfully commercialized over the past few decades owing to their ability to provide both mode and current confinement that enables low energy consumption, high efficiency and high modulation speed. However, further improvement of oxide VCSELs is limited by the nature of the oxide aperture because of self-heating, internal strain and difficulties in precise size control. In this dissertation, VCSELs using...
Show moreVertical-cavity surface-emitting lasers (VCSELs) have been greatly improved and successfully commercialized over the past few decades owing to their ability to provide both mode and current confinement that enables low energy consumption, high efficiency and high modulation speed. However, further improvement of oxide VCSELs is limited by the nature of the oxide aperture because of self-heating, internal strain and difficulties in precise size control. In this dissertation, VCSELs using lithographic approach are demonstrated to overcome the limitations of oxide VCSELs, in which an intra-cavity phase shifting mesa is applied to define the device size and provide optical mode and electrical current confinement instead of an oxide aperture. A newly developed model of intrinsic modulation response is proposed and analyzed to focus on the thermal limit of the modulation speed of VCSELs. The results show that both the temperature dependent differential gain and stimulated emission rate impact laser speed and the stimulated emission rate dominates the speed limit. Thermal limits of modulation response are compared for oxide and lithographic VCSELs for various sizes. The results predict that the intrinsic modulation response can be significantly increased by using lithographic VCSELs due to low thermal resistance and reduced mode volume while maintaining high efficiency. The intrinsic bandwidth could exceed 100 GHz for a 2-?m-diameter lithographic VCSEL. Combined with low electrical parasitics, it is expected to produce over 100 Gb/s data rate from a single directly modulated laser. VCSELs designed for high speed are discussed and their characteristics are demonstrated.
Show less
Date Issued: 2016
Identifier: CFE0006346, ucf:51556
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006346

Title: Broad Bandwidth Optical Frequency Combs from Low Noise, High Repetition Rate Semiconductor Mode-Locked Lasers.
Creator: Klee, Anthony, Delfyett, Peter, Vanstryland, Eric, Schulzgen, Axel, DeSalvo, Richard, University of Central Florida
Abstract / Description: Mode-locked lasers have numerous applications in the areas of communications, spectroscopy, and frequency metrology. Harmonically mode-locked semiconductor lasers with external ring cavities offer a unique combination of benefits in that they can produce high repetition rate pulse trains with low timing jitter, achieve narrow axial mode linewidths, have the potential for entire monolithic integration on-chip, feature high wall-plug efficiency due to direct electrical pumping, and can be...
Show moreMode-locked lasers have numerous applications in the areas of communications, spectroscopy, and frequency metrology. Harmonically mode-locked semiconductor lasers with external ring cavities offer a unique combination of benefits in that they can produce high repetition rate pulse trains with low timing jitter, achieve narrow axial mode linewidths, have the potential for entire monolithic integration on-chip, feature high wall-plug efficiency due to direct electrical pumping, and can be engineered to operate in different wavelength bands of interest. However, lasers based on InP/InGaAsP quantum well devices which operate in the important telecom C-band have thus far been relatively limited in bandwidth as compared to competing platforms. Broad bandwidth is critical for increasing information carrying capacity and enabling femtosecond pulse production for coherent continuum generation in offset frequency stabilization. The goal of the work in this dissertation is to maximize the bandwidth of semiconductor lasers, bringing them closer to reaching their full potential as all-purpose sources.Dispersion in the laser cavity is a primary limiter of the achievable bandwidth in the laser architectures covered in this dissertation. In the first part of this dissertation, an accurate self-referenced technique based on multi-heterodyne detection is developed for measuring the spectral phase of a mode-locked laser. This technique is used to characterize the dispersion in several semiconductor laser architectures. In the second part, this knowledge is applied to reduce the dispersion in a laser cavity using a programmable pulse shaper, and thus increase the laser's spectral bandwidth. We demonstrate a 10 GHz frequency comb with bandwidth spanning 5 THz, representing a twofold improvement over the previously achievable bandwidth. Finally, this laser is converted to a stand-alone system by reconfiguring it as a coupled opto-electronic oscillator and a novel stabilization scheme is presented.
Show less
Date Issued: 2016
Identifier: CFE0006129, ucf:51184
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0006129

Title: Ultrafast Laser Material Processing For Photonic Applications.
Creator: Ramme, Mark, Richardson, Martin, Fathpour, Sasan, Sundaram, Kalpathy, Kar, Aravinda, University of Central Florida
Abstract / Description: Femtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of...
Show moreFemtosecond Laser Direct Writing (FLDW) is a viable technique for producing photonic devices in bulk materials. This novel manufacturing technique is versatile due to its full 3D fabrication capability. Typically, the only requirement for this process is that the base material must be transparent to the laser wavelength. The modification process itself is based on non-linear energy absorption of laser light within the focal volume of the incident beam.This thesis addresses the feasibility of this technique for introducing photonic structures into novel dielectric materials. Additionally, this work provides a deeper understanding of the light-matter interaction mechanism occurring at high pulse repetition rates. A novel structure on the sample surface in the form of nano-fibers was observed when the bulk material was irradiated with high repetition rate pulse trains.To utilize the advantages of the FLDW technique even further, a transfer of the technology from dielectric to semiconductor materials is investigated. However, this demands detailed insight of the absorption and modification processes themselves. Experiments and the results suggested that non-linear absorption, specifically avalanche ionization, is the limiting factor inhibiting the application of FLDW to bulk semiconductors with today's laser sources.
Show less
Date Issued: 2013
Identifier: CFE0004914, ucf:49626
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0004914

Title: Two-photon absorption in bulk semiconductors and quantum well structures and its applications.
Creator: Pattanaik, Himansu, Vanstryland, Eric, Hagan, David, Delfyett, Peter, Schoenfeld, Winston, Peale, Robert, University of Central Florida
Abstract / Description: The purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging...
Show moreThe purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging and light detection and ranging (LIDAR) in uncooled direct-gap photodiodes. A theoretical study of degenerate 2PA (D-2PA) in quantum wells, QWs, is presented, along with a new theory of ND 2PA in QWs is developed. Pulsed mid-IR detection of femtosecond pulses is investigated in two different semiconductor p-i-n photodiodes (GaAs and GaN). With the smaller gap materials having larger ND-2PA, it is observed that they have better sensitivity to mid-IR detection, but unwanted background from D-2PA outweighs this advantage. A comparison of responsivity and signal-to-background ratio for GaAs and GaN in END-2PA based detection is presented. END-2PA enhancement is utilized for CW IR detection in uncooled GaAs and GaN p-i-n photodiodes. The pulsed mid-IR detection experiments are further extended to perform mid-IR imaging in uncooled GaN p-i-n photodetectors. A 3-D automated scanning gated imaging system is developed to obtain 3-D mid-IR images of various objects. The gated imaging system allows simultaneous 3-D and 2-D imaging of objects. The 3-D gated imaging system described in the dissertation could be used for examination of buried structures (microchannels, defects etc.) or laser written volumetric structures and could also be suitable for in-vivo imaging applications in biology in the mid-IR spectral region. As an example, 3-D imaging of buried semiconductor structures is presented.A theoretical study of D-2PA of QWs for transverse electric (TE) and transverse magnetic (TM) fields is carried out and an analytical expression for the D-2PA coefficient in QWs using second-order perturbation theory is derived. A theory for ND-2PA in QW semiconductor using second-order perturbation theory is developed for the first time and an analytical expression for the ND-2PA coefficient for TE, TM, and the mixed case of TE and TM is derived. The shape of the 2PA curve for the D-2PA and ND-2PA for QWs in the TE case is similar to that of bulk semiconductors. As governed by the selection rules both the D-2PA and ND-2PA curves for the TE case does not show a step-like signature for the density of states of the QWs whereas 2PA curve for the TM case shows such step like sharp features. The ND-2PA coefficient for TE, TM, and the mixed case is compared with that obtained for bulk semiconductors. Large enhancement in ND-2PA of QW semiconductors for the TM case over bulk semiconductors is predicted.
Show less
Date Issued: 2015
Identifier: CFE0005684, ucf:50164
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005684

Title: The Impact of Growth Conditions on Cubic ZnMgO Ultraviolet Sensors.
Creator: Boutwell, Ryan, Schoenfeld, Winston, Likamwa, Patrick, Kik, Pieter, Chernyak, Leonid, University of Central Florida
Abstract / Description: Cubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated....
Show moreCubic Zn1-xMgxO (c-Zn1-xMgxO) thin films have opened the deep ultraviolet (DUV) spectrum to exploration by oxide optoelectronic devices. These extraordinary films are readily wet-etch-able, have inversion symmetric lattices, and are made of common and safe constituents. They also host a number of new exciting experimental and theoretical challenges. Here, the relation between growth conditions of the c-Zn1-xMgxO film and performance of fabricated ultraviolet (UV) sensors is investigated. Plasma-Enhanced Molecular Beam Epitaxy was used to grow Zn1-xMgxO thin films and formation conditions were explored by varying the growth temperature, Mg source flux, oxygen flow rate, and radio-frequency (RF) power coupled into the plasma. Material review includes the effect of changing conditions on the film's optical transmission, surface morphology, growth rate, crystalline phase, and stoichiometric composition. Oxygen plasma composition was investigated by spectroscopic analysis under varying oxygen flow rate and applied RF power and is correlated to device performance. Ni/Mg/Au interdigitated metal-semiconductor-metal detectors were formed to explore spectral responsivity and UV-Visible rejection ratio (RR). Zn1-xMgxO films ranged in Mg composition from x = 0.45 - 1.0. Generally, x increased with increasing substrate temperature and Mg source flux, and decreased with increasing oxygen flow rate and RF power. Increasing x was correlated with decreased peak responsivity intensity and increased RR. Device performance was improved by increasing the ratio of O to O+ atoms and minimizing O2+ in the plasma. Peak responsivity as high as 500 A/W was observed in visible-blind phase-segregated Zn1-xMgxO devices, while cubic phase solar-blind devices demonstrated peak responsivity as high as 12.6 mA/W, and RR of three orders of magnitude. Optimal conditions are predicted for the formation of DUV Zn1-xMgxO sensors.
Show less
Date Issued: 2013
Identifier: CFE0005087, ucf:50735
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0005087

Title: ALL-SEMICONDUCTOR HIGH POWER MODE-LOCKED LASER SYSTEM.
Creator: Kim, Kyungbum, Delfyett, Peter, University of Central Florida
Abstract / Description: The objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the...
Show moreThe objective of this dissertation is to generate high power ultrashort optical pulses from an all-semiconductor mode-locked laser system. The limitations of semiconductor optical amplifier in high energy, ultrashort pulse amplification are reviewed. A method to overcome the fundamental limit of small stored energy inside semiconductor optical amplifier called "eXtreme Chirped Pulse Amplification (X-CPA)" is proposed and studied theoretically and experimentally. The key benefits of the concept of X-CPA are addressed. Based on theoretical and experimental study, an all-semiconductor mode-locked X-CPA system consisting of a mode-locked master oscillator, an optical pulse pre-stretcher, a semiconductor optical amplifier (SOA) pulse picker, an extreme pulse stretcher/compressor, cascaded optical amplifiers, and a bulk grating compressor is successfully demonstrated and generates >kW record peak power. A potential candidate for generating high average power from an X-CPA system, novel grating coupled surface emitting semiconductor laser (GCSEL) devices, are studied experimentally. The first demonstration of mode-locking with GCSELs and associated amplification characteristics of grating coupled surface emitting SOAs will be presented. In an effort to go beyond the record setting results of the X-CPA system, a passive optical cavity amplification technique in conjunction with the X-CPA system is constructed, and studied experimentally and theoretically.
Show less
Date Issued: 2006
Identifier: CFE0001069, ucf:46767
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001069

Title: ULTRASHORT, HIGH POWER, AND ULTRALOW NOISE MODE-LOCKED OPTICAL PULSE GENERATION USING QUANTUM-DOT SEMICONDUCTOR LASERS.
Creator: Choi, Myoung-Taek, Delfyett, Peter, University of Central Florida
Abstract / Description: This dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section...
Show moreThis dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section devices. Short pulse generation from an external cavity mode-locked QD two-section diode laser is studied. High quality, sub-picosecond (960 fs), high peak power (1.2 W) pulse trains are obtained. The sign and magnitude of pulse chirp were measured for the first time. The role of the self-phase modulation and the linewidth enhancement factor in QD mode-locked lasers is addressed. The noise performance of two-section mode-locked lasers and a SOA-based ring laser was investigated. Significant reduction of the timing jitter under hybrid mode-locked operation was achieved owing to more than one order of magnitude reduction of the linewidth in QD gain media. Ultralow phase noise performance (integrated timing jitter of a few fs at a 10 GHz repetition rate) was demonstrated from an actively mode-locked unidirectional ring laser. These results show that quantum dot mode-locked lasers are strong competitors to conventional semiconductor lasers in noise performance. Finally we demonstrated an opto-electronic oscillator (OEO) and coupled opto-electronic oscillators (COEO) which have the potential for both high purity microwave and low noise optical pulse generation. The phase noise of the COEO is measured by the photonic delay line frequency discriminator method. Based on this study we discuss the prospects of the COEO as a low noise optical pulse source.
Show less
Date Issued: 2006
Identifier: CFE0001410, ucf:47068
Format: Document (PDF)
PURL: http://purl.flvc.org/ucf/fd/CFE0001410

semiconductor lasers (6)	+ -
semiconductor (5)	+ -
semiconductors (5)	+ -
Semiconductor (4)	+ -
Semiconductor Laser (4)	+ -

VCSEL (4)	+ -
mode-locked lasers (3)	+ -
semiconductor laser (3)	+ -
Charge Transport (2)	+ -
Coherent Detection (2)	+ -
LDMOS (2)	+ -
Mode-locked laser (2)	+ -
Power Semiconductor (2)	+ -
Power Semiconductor Devices (2)	+ -
QCL (2)	+ -
Semiconductor Lasers (2)	+ -
Semiconductor laser (2)	+ -
Semiconductor lasers (2)	+ -
Semiconductors (2)	+ -
ZnO (2)	+ -
high speed modulation (2)	+ -
integrated optics (2)	+ -
laser (2)	+ -
laser physics (2)	+ -
nonlinear optics (2)	+ -
optics (2)	+ -
radiation effects (2)	+ -
Analog Links (1)	+ -
Au-In (1)	+ -
Beam Steering (1)	+ -

ETD Collection (55)	+ -
Honors Collection (2)	+ -

University of Central Florida (57)	+ -
Delfyett, Peter (15)	+ -
Likamwa, Patrick (10)	+ -
Deppe, Dennis (6)	+ -
Peale, Robert (6)	+ -

Schoenfeld, Winston (6)	+ -
Li, Guifang (5)	+ -
Malocha, Donald (5)	+ -
Sundaram, Kalpathy (5)	+ -
Vanstryland, Eric (5)	+ -
Yuan, Jiann-Shiun (5)	+ -
Christodoulides, Demetrios (4)	+ -
Fathpour, Sasan (4)	+ -
Abdolvand, Reza (3)	+ -
Chernyak, Leonid (3)	+ -
DeSalvo, Richard (3)	+ -
Hagan, David (3)	+ -
Khajavikhan, Mercedeh (3)	+ -
Khondaker, Saiful (3)	+ -
Lyakh, Arkadiy (3)	+ -
Shen, Zheng (3)	+ -
Bass, Michael (2)	+ -
Chow, Lee (2)	+ -
Flitsiyan, Elena (2)	+ -
Johnson, Eric (2)	+ -
Kar, Aravinda (2)	+ -
Schulzgen, Axel (2)	+ -
Shea, Patrick (2)	+ -
Shen, John (2)	+ -
Wu, Shintson (2)	+ -

Search In

Pages

Pages

Sort Results By:

Narrow results by:

Topical Subject

Collection

Type of Resource

Language

Creator

Format

Owner