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- Title
- MAGNETIC PROPERTIES OF SPUTTER DEPOSITED FE-BASED AMORPHOUS THIN FILMS FOR RESONATOR APPLICATION.
- Creator
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China, Chaitali, Coffey, Kevin, University of Central Florida
- Abstract / Description
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In this study we investigate the magnetic properties of Fe-based amorphous thin films. Fe1-x-y-zBxSiyCz, Fe80-xNixB20, Fe80-xMnxB20, and Fe73-xMnxB27 films were deposited on silicon and glass substrates in a DC and RF magnetron sputtering system. Inductive magnetic measurements were performed to investigate the magnetic properties, including induced anisotropy and magnetostriction, of the as-deposited and annealed films using an M-H Looper. The chemical composition of the films was...
Show moreIn this study we investigate the magnetic properties of Fe-based amorphous thin films. Fe1-x-y-zBxSiyCz, Fe80-xNixB20, Fe80-xMnxB20, and Fe73-xMnxB27 films were deposited on silicon and glass substrates in a DC and RF magnetron sputtering system. Inductive magnetic measurements were performed to investigate the magnetic properties, including induced anisotropy and magnetostriction, of the as-deposited and annealed films using an M-H Looper. The chemical composition of the films was characterized using secondary ion mass spectroscopy (SIMS). The physical thickness of the films was determined by use of a stylus profilometer. The M-H Looper studies indicated that the induced anisotropy (Hk) depends strongly on the nickel concentration as well as on the annealing conditions, specifically the time and temperature of the annealing process. For the same metalloid concentration, the induced anisotropy has a maximum as a function of Ni. For the same nickel concentration and annealing time, it was found that the value of Hk decreases with the increase in annealing temperature. For each composition studied, low temperature long time annealing showed a higher value of Hk compared to high temperature short time annealing. From the magnetostriction values of Fe80-xNixB20 alloys, it was found that the sputter deposited films show similar trend but differ in magnitude when compared with ribbon samples. The magnetostriction of annealed thin films is found to be representative of ribbon samples. A potential composition modification to improve the strength of the field induced anisotropy is the addition of low levels of Mn.
Show less - Date Issued
- 2006
- Identifier
- CFE0001275, ucf:46896
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0001275
- Title
- Deposition and characterization studies of boron carbon nitride (BCN) thin films prepared by dual target sputtering.
- Creator
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Prakash, Adithya, Sundaram, Kalpathy, Kapoor, Vikram, Yuan, Jiann-Shiun, Jin, Yier, Chow, Louis, University of Central Florida
- Abstract / Description
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As complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems related to circuit performance such as critical path signal delay are becoming a pressing issue. These delays are a result of resistance and capacitance product (RC time constant) of the interconnect circuit. A novel material with reduced dielectric constants may compromise both the thermal and mechanical properties that can lead to die cracking during package and other reliability issues. Boron...
Show moreAs complementary metal-oxide semiconductor (CMOS) devices shrink to smaller size, the problems related to circuit performance such as critical path signal delay are becoming a pressing issue. These delays are a result of resistance and capacitance product (RC time constant) of the interconnect circuit. A novel material with reduced dielectric constants may compromise both the thermal and mechanical properties that can lead to die cracking during package and other reliability issues. Boron carbon nitride (BCN) compounds have been expected to combine the excellent properties of boron carbide (B4C), boron nitride (BN) and carbon nitride (C3N4), with their properties adjustable, depending on composition and structure. BCN thin film is a good candidate for being hard, dense, pore-free, low-k dielectric with values in the range of 1.9 to 2.1. Excellent mechanical properties such as adhesion, high hardness and good wear resistance have been reported in the case of sputtered BCN thin films. Problems posed by high hardness materials such as diamonds in high cutting applications and the comparatively lower hardness of c-BN gave rise to the idea of a mixed phase that can overcome these problems with a minimum compromise in its properties. A hybrid between semi-metallic graphite and insulating h-BN may show adjusted semiconductor properties. BCN exhibits the potential to control optical bandgap (band gap engineering) by atomic composition, hence making it a good candidate for electronic and photonic devices. Due to tremendous bandgap engineering capability and refractive index variability in BCN thin film, it is feasible to develop filters and mirrors for use in ultra violet (UV) wavelength region. It is of prime importance to understand process integration challenges like deposition rates, curing, and etching, cleaning and polishing during characterization of low-k films. The sputtering technique provides unique advantages over other techniques such as freedom to choose the substrate material and a uniform deposition over relatively large area. BCN films are prepared by dual target reactive magnetron sputtering from a B4C and BN targets using DC and RF powers respectively. In this work, an investigation of mechanical, optical, chemical, surface and device characterizations is undertaken. These holistic and thorough studies, will provide the insight into the capability of BCN being a hard, chemically inert, low-k, wideband gap material, as a potential leader in semiconductor and optics industry.
Show less - Date Issued
- 2016
- Identifier
- CFE0006378, ucf:51496
- Format
- Document (PDF)
- PURL
- http://purl.flvc.org/ucf/fd/CFE0006378
